DE3364340D1 - Semiconductor laser and method of manufacturing it - Google Patents
Semiconductor laser and method of manufacturing itInfo
- Publication number
- DE3364340D1 DE3364340D1 DE8383200429T DE3364340T DE3364340D1 DE 3364340 D1 DE3364340 D1 DE 3364340D1 DE 8383200429 T DE8383200429 T DE 8383200429T DE 3364340 T DE3364340 T DE 3364340T DE 3364340 D1 DE3364340 D1 DE 3364340D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor laser
- laser
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8201409A NL8201409A (nl) | 1982-04-02 | 1982-04-02 | Halfgeleiderlaser en werkwijze ter vervaardiging ervan. |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3364340D1 true DE3364340D1 (en) | 1986-08-07 |
Family
ID=19839526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383200429T Expired DE3364340D1 (en) | 1982-04-02 | 1983-03-28 | Semiconductor laser and method of manufacturing it |
Country Status (6)
Country | Link |
---|---|
US (1) | US4542512A (de) |
EP (1) | EP0091162B1 (de) |
JP (1) | JPS58182891A (de) |
CA (1) | CA1187589A (de) |
DE (1) | DE3364340D1 (de) |
NL (1) | NL8201409A (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5710992A (en) * | 1980-06-24 | 1982-01-20 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture therefor |
DE3435306A1 (de) * | 1984-09-26 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke |
DE3617362A1 (de) * | 1986-05-23 | 1987-11-26 | Schott Glaswerke | Verbundmaterialien fuer die lasertechnik und optik |
GB2222304A (en) * | 1987-07-01 | 1990-02-28 | Plessey Co Plc | Gallium arsenide device |
US5262658A (en) * | 1991-12-24 | 1993-11-16 | Xerox Corporation | Thermally stabilized light emitting diode structure |
JP3510305B2 (ja) * | 1994-02-22 | 2004-03-29 | 三菱電機株式会社 | 半導体レーザの製造方法,及び半導体レーザ |
JPH0997946A (ja) * | 1995-07-21 | 1997-04-08 | Matsushita Electric Ind Co Ltd | 半導体レーザ及びその製造方法 |
US5872387A (en) * | 1996-01-16 | 1999-02-16 | The Board Of Trustees Of The University Of Illinois | Deuterium-treated semiconductor devices |
EP1714359A4 (de) * | 2004-02-05 | 2008-09-17 | Univ Oklahoma | 110-orientierte gruppe-iv-vi-halbleiterstruktur und verfahren zur verwendung und herstellung dieser |
DE102013009161A1 (de) * | 2013-05-31 | 2014-12-18 | Mahle International Gmbh | Kolben für einen Verbrennungsmotor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2315612A1 (de) * | 1973-03-29 | 1974-10-03 | Licentia Gmbh | Verfahren zur herstellung eines streifenkontaktes bei einem halbleiterinjektionslaser |
JPS531482A (en) * | 1976-06-25 | 1978-01-09 | Mitsubishi Electric Corp | Semiconductor injection type laser |
DE2822146C2 (de) * | 1978-05-20 | 1982-11-25 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode |
DE3102875C2 (de) * | 1978-05-20 | 1984-02-16 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Heterostruktur-Halbleiterlaserdiode |
JPS56161687A (en) * | 1980-05-16 | 1981-12-12 | Matsushita Electric Ind Co Ltd | Semiconductor laser |
JPS5749289A (en) * | 1980-09-08 | 1982-03-23 | Mitsubishi Electric Corp | Semiconductor laser device |
US4454603A (en) * | 1981-01-29 | 1984-06-12 | Licentia Patent-Verwaltungs-Gmbh | Semiconductor laser |
US4416011A (en) * | 1981-07-06 | 1983-11-15 | Rca Corporation | Semiconductor light emitting device |
-
1982
- 1982-04-02 NL NL8201409A patent/NL8201409A/nl not_active Application Discontinuation
-
1983
- 1983-03-28 DE DE8383200429T patent/DE3364340D1/de not_active Expired
- 1983-03-28 EP EP83200429A patent/EP0091162B1/de not_active Expired
- 1983-03-31 US US06/481,006 patent/US4542512A/en not_active Expired - Fee Related
- 1983-03-31 CA CA000424981A patent/CA1187589A/en not_active Expired
- 1983-04-01 JP JP58055338A patent/JPS58182891A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0091162B1 (de) | 1986-07-02 |
US4542512A (en) | 1985-09-17 |
CA1187589A (en) | 1985-05-21 |
NL8201409A (nl) | 1983-11-01 |
JPS58182891A (ja) | 1983-10-25 |
EP0091162A1 (de) | 1983-10-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |