DE3364340D1 - Semiconductor laser and method of manufacturing it - Google Patents

Semiconductor laser and method of manufacturing it

Info

Publication number
DE3364340D1
DE3364340D1 DE8383200429T DE3364340T DE3364340D1 DE 3364340 D1 DE3364340 D1 DE 3364340D1 DE 8383200429 T DE8383200429 T DE 8383200429T DE 3364340 T DE3364340 T DE 3364340T DE 3364340 D1 DE3364340 D1 DE 3364340D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383200429T
Other languages
English (en)
Inventor
Den Beemt Johannes Andreas Van
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3364340D1 publication Critical patent/DE3364340D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE8383200429T 1982-04-02 1983-03-28 Semiconductor laser and method of manufacturing it Expired DE3364340D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8201409A NL8201409A (nl) 1982-04-02 1982-04-02 Halfgeleiderlaser en werkwijze ter vervaardiging ervan.

Publications (1)

Publication Number Publication Date
DE3364340D1 true DE3364340D1 (en) 1986-08-07

Family

ID=19839526

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383200429T Expired DE3364340D1 (en) 1982-04-02 1983-03-28 Semiconductor laser and method of manufacturing it

Country Status (6)

Country Link
US (1) US4542512A (de)
EP (1) EP0091162B1 (de)
JP (1) JPS58182891A (de)
CA (1) CA1187589A (de)
DE (1) DE3364340D1 (de)
NL (1) NL8201409A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710992A (en) * 1980-06-24 1982-01-20 Sumitomo Electric Ind Ltd Semiconductor device and manufacture therefor
DE3435306A1 (de) * 1984-09-26 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke
DE3617362A1 (de) * 1986-05-23 1987-11-26 Schott Glaswerke Verbundmaterialien fuer die lasertechnik und optik
GB2222304A (en) * 1987-07-01 1990-02-28 Plessey Co Plc Gallium arsenide device
US5262658A (en) * 1991-12-24 1993-11-16 Xerox Corporation Thermally stabilized light emitting diode structure
JP3510305B2 (ja) * 1994-02-22 2004-03-29 三菱電機株式会社 半導体レーザの製造方法，及び半導体レーザ
JPH0997946A (ja) * 1995-07-21 1997-04-08 Matsushita Electric Ind Co Ltd 半導体レーザ及びその製造方法
US5872387A (en) * 1996-01-16 1999-02-16 The Board Of Trustees Of The University Of Illinois Deuterium-treated semiconductor devices
EP1714359A4 (de) * 2004-02-05 2008-09-17 Univ Oklahoma 110-orientierte gruppe-iv-vi-halbleiterstruktur und verfahren zur verwendung und herstellung dieser
DE102013009161A1 (de) * 2013-05-31 2014-12-18 Mahle International Gmbh Kolben für einen Verbrennungsmotor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2315612A1 (de) * 1973-03-29 1974-10-03 Licentia Gmbh Verfahren zur herstellung eines streifenkontaktes bei einem halbleiterinjektionslaser
JPS531482A (en) * 1976-06-25 1978-01-09 Mitsubishi Electric Corp Semiconductor injection type laser
DE2822146C2 (de) * 1978-05-20 1982-11-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Heterostruktur-Halbleiterlaserdiode und Verfahren zur Herstellung einer Heterostruktur-Halbleiterdiode
DE3102875C2 (de) * 1978-05-20 1984-02-16 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Heterostruktur-Halbleiterlaserdiode
JPS56161687A (en) * 1980-05-16 1981-12-12 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS5749289A (en) * 1980-09-08 1982-03-23 Mitsubishi Electric Corp Semiconductor laser device
US4454603A (en) * 1981-01-29 1984-06-12 Licentia Patent-Verwaltungs-Gmbh Semiconductor laser
US4416011A (en) * 1981-07-06 1983-11-15 Rca Corporation Semiconductor light emitting device

Also Published As

Publication number Publication date
EP0091162B1 (de) 1986-07-02
US4542512A (en) 1985-09-17
CA1187589A (en) 1985-05-21
NL8201409A (nl) 1983-11-01
JPS58182891A (ja) 1983-10-25
EP0091162A1 (de) 1983-10-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee