DE3345189C2 - - Google Patents
Info
- Publication number
- DE3345189C2 DE3345189C2 DE3345189A DE3345189A DE3345189C2 DE 3345189 C2 DE3345189 C2 DE 3345189C2 DE 3345189 A DE3345189 A DE 3345189A DE 3345189 A DE3345189 A DE 3345189A DE 3345189 C2 DE3345189 C2 DE 3345189C2
- Authority
- DE
- Germany
- Prior art keywords
- gate
- region
- area
- source
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 description 9
- 238000005036 potential barrier Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 230000003321 amplification Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1124—Devices with PN homojunction gate
- H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57217755A JPS59108461A (ja) | 1982-12-14 | 1982-12-14 | 固体撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3345189A1 DE3345189A1 (de) | 1984-06-14 |
| DE3345189C2 true DE3345189C2 (US07291463-20071106-C00074.png) | 1989-05-18 |
Family
ID=16709234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833345189 Granted DE3345189A1 (de) | 1982-12-14 | 1983-12-14 | Festkoerper-bildaufnahmewandler |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4686555A (US07291463-20071106-C00074.png) |
| JP (1) | JPS59108461A (US07291463-20071106-C00074.png) |
| DE (1) | DE3345189A1 (US07291463-20071106-C00074.png) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0666446B2 (ja) * | 1984-03-29 | 1994-08-24 | オリンパス光学工業株式会社 | 固体撮像素子 |
| US4670764A (en) * | 1984-06-08 | 1987-06-02 | Eaton Corporation | Multi-channel power JFET with buried field shaping regions |
| US4635084A (en) * | 1984-06-08 | 1987-01-06 | Eaton Corporation | Split row power JFET |
| US4633281A (en) * | 1984-06-08 | 1986-12-30 | Eaton Corporation | Dual stack power JFET with buried field shaping depletion regions |
| EP0167810A1 (en) * | 1984-06-08 | 1986-01-15 | Eaton Corporation | Power JFET with plural lateral pinching |
| JPS61136388A (ja) * | 1984-11-21 | 1986-06-24 | Olympus Optical Co Ltd | 固体撮像装置 |
| GB2170675B (en) * | 1984-12-28 | 1989-12-13 | Canon Kk | Image sensing apparatus |
| JPS6312161A (ja) * | 1986-07-03 | 1988-01-19 | Olympus Optical Co Ltd | 半導体撮像装置 |
| DE3876869D1 (de) * | 1987-06-22 | 1993-02-04 | Landis & Gyr Betriebs Ag | Photodetektor fuer ultraviolett und verfahren zur herstellung. |
| JPS6442992A (en) * | 1987-08-08 | 1989-02-15 | Olympus Optical Co | Solid-state image pickup device |
| US5331164A (en) * | 1991-03-19 | 1994-07-19 | California Institute Of Technology | Particle sensor array |
| JP2713205B2 (ja) * | 1995-02-21 | 1998-02-16 | 日本電気株式会社 | 半導体装置 |
| US5828101A (en) * | 1995-03-30 | 1998-10-27 | Kabushiki Kaisha Toshiba | Three-terminal semiconductor device and related semiconductor devices |
| EP1652237B1 (en) * | 2003-01-31 | 2011-06-01 | Intevac, Inc. | Backside thinning of image array devices |
| US7042060B2 (en) * | 2003-01-31 | 2006-05-09 | Intevac, Inc. | Backside thinning of image array devices |
| US20040169248A1 (en) * | 2003-01-31 | 2004-09-02 | Intevac, Inc. | Backside thinning of image array devices |
| US7005637B2 (en) * | 2003-01-31 | 2006-02-28 | Intevac, Inc. | Backside thinning of image array devices |
| US20080099797A1 (en) * | 2006-10-31 | 2008-05-01 | Douglas Kerns | Method and device for sensing radiation |
| RU2638108C1 (ru) * | 2013-12-25 | 2017-12-11 | Кэнон Кабусики Кайся | Устройство формирования изображения, система формирования изображения и способ изготовления устройства формирования изображения |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5515229A (en) * | 1978-07-18 | 1980-02-02 | Semiconductor Res Found | Semiconductor photograph device |
| JPS55124259A (en) * | 1979-03-19 | 1980-09-25 | Semiconductor Res Found | Semiconductor device |
| JPS5689174A (en) * | 1979-12-21 | 1981-07-20 | Toshiba Corp | Solid image pickup device |
-
1982
- 1982-12-14 JP JP57217755A patent/JPS59108461A/ja active Granted
-
1983
- 1983-11-30 US US06/556,347 patent/US4686555A/en not_active Expired - Lifetime
- 1983-12-14 DE DE19833345189 patent/DE3345189A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3345189A1 (de) | 1984-06-14 |
| US4686555A (en) | 1987-08-11 |
| JPS59108461A (ja) | 1984-06-22 |
| JPH0370436B2 (US07291463-20071106-C00074.png) | 1991-11-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3345189C2 (US07291463-20071106-C00074.png) | ||
| DE3104489C2 (US07291463-20071106-C00074.png) | ||
| DE3326924C2 (US07291463-20071106-C00074.png) | ||
| DE3881304T2 (de) | MOS-Transistor. | |
| DE2213765C3 (de) | Bildaufnahmevorrichtung mit einem Feldeffekttransistor als Sensor | |
| DE3446972C2 (US07291463-20071106-C00074.png) | ||
| DE2842346C2 (de) | CCD und Verfahren zum Betreiben eines solchen im Zwischenspaltenprinzip | |
| DE3413829C2 (US07291463-20071106-C00074.png) | ||
| DE19637790A1 (de) | Pixelsensorzelle | |
| DE2735651A1 (de) | Bildaufnahmeanordnung | |
| DE3345239C2 (US07291463-20071106-C00074.png) | ||
| DE2553203A1 (de) | Festkoerper-bildabtaster mit zerstoerungsfreiem, wahlfreiem zugriff | |
| DE2712479A1 (de) | Ladungsgekoppelte anordnung | |
| DE2647274C2 (de) | Phototransistorfeld als Halbleiter-Bildaufnehmer und Verfahren zu seiner Herstellung | |
| DE2922301C2 (de) | Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung | |
| DE3234044A1 (de) | Festkoerper-abbildungsvorrichtung | |
| DE2427256A1 (de) | Halbleiteranordnung | |
| DE69732520T2 (de) | Ladungsgekoppelte anordnung und verfahren zur herstellung | |
| DE3529025C2 (US07291463-20071106-C00074.png) | ||
| DE2722538A1 (de) | Ladungsgekoppelte halbleitervorrichtung | |
| DE3407038C2 (de) | Halbleiter-Photodetektor und Verfahren zu dessen Betrieb | |
| DE19735042A1 (de) | Phototransistor | |
| DE3345044C2 (de) | Verfahren zur Herstellung eines Halbleiter-Fotodetektors | |
| DE3345175A1 (de) | Festkoerper-bildaufnahmewandlerelement | |
| DE2334116C3 (de) | Ladungsübertragungs-Halbleiterbauelement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |