DE3310362C2 - - Google Patents

Info

Publication number
DE3310362C2
DE3310362C2 DE19833310362 DE3310362A DE3310362C2 DE 3310362 C2 DE3310362 C2 DE 3310362C2 DE 19833310362 DE19833310362 DE 19833310362 DE 3310362 A DE3310362 A DE 3310362A DE 3310362 C2 DE3310362 C2 DE 3310362C2
Authority
DE
Germany
Prior art keywords
light
semiconductor layer
radiation
semiconductor
individual elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19833310362
Other languages
German (de)
English (en)
Other versions
DE3310362A1 (de
Inventor
Claus Dr. 8035 Gauting De Weyrich
Eberhard F. Dr. 8023 Pullach De Krimmel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19833310362 priority Critical patent/DE3310362A1/de
Publication of DE3310362A1 publication Critical patent/DE3310362A1/de
Application granted granted Critical
Publication of DE3310362C2 publication Critical patent/DE3310362C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
DE19833310362 1983-03-22 1983-03-22 Verfahren zur veraenderung der optischen eigenschaft der grenzflaeche zwischen halbleitermaterial und metallkontakt Granted DE3310362A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19833310362 DE3310362A1 (de) 1983-03-22 1983-03-22 Verfahren zur veraenderung der optischen eigenschaft der grenzflaeche zwischen halbleitermaterial und metallkontakt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19833310362 DE3310362A1 (de) 1983-03-22 1983-03-22 Verfahren zur veraenderung der optischen eigenschaft der grenzflaeche zwischen halbleitermaterial und metallkontakt

Publications (2)

Publication Number Publication Date
DE3310362A1 DE3310362A1 (de) 1984-10-11
DE3310362C2 true DE3310362C2 (US06277897-20010821-C00009.png) 1992-04-16

Family

ID=6194290

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833310362 Granted DE3310362A1 (de) 1983-03-22 1983-03-22 Verfahren zur veraenderung der optischen eigenschaft der grenzflaeche zwischen halbleitermaterial und metallkontakt

Country Status (1)

Country Link
DE (1) DE3310362A1 (US06277897-20010821-C00009.png)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0214674B1 (en) * 1985-09-05 1990-12-27 Agfa-Gevaert N.V. Method of adjusting the light-emission of a light emitting diode at a given driving current
EP0399361A3 (de) * 1989-05-24 1991-02-06 Siemens Aktiengesellschaft Optoelektronisches Bauelement mit optischer Absorberfläche im III-V-Halbleitermaterial
US5917202A (en) * 1995-12-21 1999-06-29 Hewlett-Packard Company Highly reflective contacts for light emitting semiconductor devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6413441A (US06277897-20010821-C00009.png) * 1964-11-19 1966-05-20
GB1057687A (en) * 1964-12-11 1967-02-08 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
US3900864A (en) * 1973-05-17 1975-08-19 Bell Telephone Labor Inc Monolithic led displays
US3969751A (en) * 1974-12-18 1976-07-13 Rca Corporation Light shield for a semiconductor device comprising blackened photoresist
CH645208A5 (de) * 1978-10-31 1984-09-14 Bbc Brown Boveri & Cie Verfahren zur herstellung von elektrischen kontakten an halbleiterbauelementen.
DD140716B1 (de) * 1978-12-18 1983-01-26 Heinz Hentschel Fasenrollvorrichtung fuer zylindrische nietstifte
US4292092A (en) * 1980-06-02 1981-09-29 Rca Corporation Laser processing technique for fabricating series-connected and tandem junction series-connected solar cells into a solar battery

Also Published As

Publication number Publication date
DE3310362A1 (de) 1984-10-11

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee