DE3280206D1 - Verfahren fuer selbstregenerierende dielektrika. - Google Patents
Verfahren fuer selbstregenerierende dielektrika.Info
- Publication number
- DE3280206D1 DE3280206D1 DE8282401570T DE3280206T DE3280206D1 DE 3280206 D1 DE3280206 D1 DE 3280206D1 DE 8282401570 T DE8282401570 T DE 8282401570T DE 3280206 T DE3280206 T DE 3280206T DE 3280206 D1 DE3280206 D1 DE 3280206D1
- Authority
- DE
- Germany
- Prior art keywords
- dielectrics
- regenerating
- self
- regenerating dielectrics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003989 dielectric material Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/326—Application of electric currents or fields, e.g. for electroforming
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/295,417 US4420497A (en) | 1981-08-24 | 1981-08-24 | Method of detecting and repairing latent defects in a semiconductor dielectric layer |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3280206D1 true DE3280206D1 (de) | 1990-08-16 |
Family
ID=23137617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282401570T Expired - Lifetime DE3280206D1 (de) | 1981-08-24 | 1982-08-24 | Verfahren fuer selbstregenerierende dielektrika. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4420497A (de) |
EP (1) | EP0073713B1 (de) |
JP (1) | JPS5843528A (de) |
CA (1) | CA1187623A (de) |
DE (1) | DE3280206D1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4488349A (en) * | 1982-04-09 | 1984-12-18 | Nissan Motor Company, Limited | Method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization |
US4464823A (en) * | 1982-10-21 | 1984-08-14 | Energy Conversion Devices, Inc. | Method for eliminating short and latent short circuit current paths in photovoltaic devices |
US4510674A (en) * | 1982-10-21 | 1985-04-16 | Sovonics Solar Systems | System for eliminating short circuit current paths in photovoltaic devices |
US4601939A (en) * | 1983-09-20 | 1986-07-22 | International Business Machines Corporation | Composite insulator structure |
US4937651A (en) * | 1985-08-24 | 1990-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same |
KR900006772B1 (ko) * | 1985-11-06 | 1990-09-21 | 세미콘닥터 에너지 라보라토리 컴파니 리미티드 | 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법 |
US5079191A (en) * | 1985-11-29 | 1992-01-07 | Hitachi, Ltd. | Process for producing a semiconductor device |
US4668330A (en) * | 1985-12-05 | 1987-05-26 | Monsanto Company | Furnace contamination |
US5281541A (en) * | 1990-09-07 | 1994-01-25 | Canon Kabushiki Kaisha | Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method |
US5208189A (en) * | 1991-09-30 | 1993-05-04 | Motorola, Inc. | Process for plugging defects in a dielectric layer of a semiconductor device |
DE69921286D1 (de) | 1999-01-26 | 2004-11-25 | St Microelectronics Srl | Charakterisierung einer Halbleiter-Dielektrikum-Grenzschicht mittels Photostrom-Messungen |
US6884295B2 (en) * | 2000-05-29 | 2005-04-26 | Tokyo Electron Limited | Method of forming oxynitride film or the like and system for carrying out the same |
US6707055B2 (en) * | 2001-09-28 | 2004-03-16 | Polaroid Corporation | Method and apparatus for detecting pinhole defects in a dielectric layer |
US7045470B2 (en) * | 2003-11-04 | 2006-05-16 | Lucent Technologies Inc. | Methods of making thin dielectric layers on substrates |
US20060014624A1 (en) * | 2004-07-15 | 2006-01-19 | Biljana Mikijelj | High dielectric strength monolithic Si3N4 |
US9125854B2 (en) * | 2007-10-30 | 2015-09-08 | The Board Of Trustees Of The University Of Arkansas | Compositions and methods of enhancing immune responses to flagellated bacterium |
US20100304512A1 (en) * | 2007-11-30 | 2010-12-02 | University Of Toledo | System for Diagnosis and Treatment of Photovoltaic and Other Semiconductor Devices |
WO2009120974A2 (en) * | 2008-03-28 | 2009-10-01 | University Of Toledo | System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby |
US10242922B2 (en) * | 2014-01-09 | 2019-03-26 | Infineon Technologies Ag | Circuit and method for internally assessing dielectric reliability of a semiconductor technology |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1411517A (fr) * | 1963-10-15 | 1965-09-17 | Licentia Gmbh | Dispositif pour produire un revêtement de protection sur un solide |
US3874915A (en) * | 1967-02-03 | 1975-04-01 | Hitachi Ltd | Silicon nitride on silicon oxide coatings for semiconductor devices |
JPS5134678A (en) * | 1974-09-18 | 1976-03-24 | Matsushita Electric Ind Co Ltd | Handotaisochi no seizohoho |
DE2557079C2 (de) * | 1975-12-18 | 1984-05-24 | Ibm Deutschland Gmbh, 7000 Stuttgart | Verfahren zum Herstellen einer Maskierungsschicht |
EP0023925B1 (de) * | 1979-02-19 | 1985-07-10 | Fujitsu Limited | Verfahren zur herstellung eines isolierenden films für halbleiter- oberflächenund halbleiterbauelement mit diesem film |
US4302725A (en) * | 1980-03-28 | 1981-11-24 | Rca Corporation | Method for testing panel-to-funnel sealing layer of a cathode-ray tube |
JPS572530A (en) * | 1980-06-06 | 1982-01-07 | Nec Corp | Manufacture of semiconductor device |
-
1981
- 1981-08-24 US US06/295,417 patent/US4420497A/en not_active Expired - Lifetime
-
1982
- 1982-08-23 JP JP57144876A patent/JPS5843528A/ja active Pending
- 1982-08-23 CA CA000409928A patent/CA1187623A/en not_active Expired
- 1982-08-24 DE DE8282401570T patent/DE3280206D1/de not_active Expired - Lifetime
- 1982-08-24 EP EP82401570A patent/EP0073713B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0073713A3 (en) | 1985-12-18 |
US4420497A (en) | 1983-12-13 |
JPS5843528A (ja) | 1983-03-14 |
EP0073713A2 (de) | 1983-03-09 |
CA1187623A (en) | 1985-05-21 |
EP0073713B1 (de) | 1990-07-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |