DE3279917D1 - Method for producing semiconductor devices including the use of reactive ion etching - Google Patents
Method for producing semiconductor devices including the use of reactive ion etchingInfo
- Publication number
- DE3279917D1 DE3279917D1 DE8282105210T DE3279917T DE3279917D1 DE 3279917 D1 DE3279917 D1 DE 3279917D1 DE 8282105210 T DE8282105210 T DE 8282105210T DE 3279917 T DE3279917 T DE 3279917T DE 3279917 D1 DE3279917 D1 DE 3279917D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor devices
- reactive ion
- ion etching
- devices including
- producing semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/279,129 US4389294A (en) | 1981-06-30 | 1981-06-30 | Method for avoiding residue on a vertical walled mesa |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3279917D1 true DE3279917D1 (en) | 1989-10-05 |
Family
ID=23067742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282105210T Expired DE3279917D1 (en) | 1981-06-30 | 1982-06-15 | Method for producing semiconductor devices including the use of reactive ion etching |
Country Status (4)
Country | Link |
---|---|
US (1) | US4389294A (de) |
EP (1) | EP0068275B1 (de) |
JP (1) | JPS589338A (de) |
DE (1) | DE3279917D1 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0562127B1 (de) * | 1991-10-14 | 2001-04-25 | Denso Corporation | Verfahren zur Herstellung einer Halbleiteranordnung |
US5521422A (en) * | 1994-12-02 | 1996-05-28 | International Business Machines Corporation | Corner protected shallow trench isolation device |
KR100216267B1 (ko) * | 1996-12-26 | 1999-08-16 | 구본준 | 트렌치 격리구조를 갖는 반도체 장치 제조방법 |
US5804490A (en) * | 1997-04-14 | 1998-09-08 | International Business Machines Corporation | Method of filling shallow trenches |
JP3252780B2 (ja) * | 1998-01-16 | 2002-02-04 | 日本電気株式会社 | シリコン層のエッチング方法 |
US6221733B1 (en) * | 1998-11-13 | 2001-04-24 | Lattice Semiconductor Corporation | Reduction of mechanical stress in shallow trench isolation process |
US6159821A (en) * | 1999-02-12 | 2000-12-12 | Vanguard International Semiconductor Corporation | Methods for shallow trench isolation |
US6232203B1 (en) * | 1999-07-23 | 2001-05-15 | Taiwan Semiconductor Manufacturing Company | Process for making improved shallow trench isolation by employing nitride spacers in the formation of the trenches |
US6198140B1 (en) | 1999-09-08 | 2001-03-06 | Denso Corporation | Semiconductor device including several transistors and method of manufacturing the same |
US6096623A (en) * | 1999-09-09 | 2000-08-01 | United Semiconductor Corp. | Method for forming shallow trench isolation structure |
WO2001063663A1 (en) * | 2000-02-24 | 2001-08-30 | Advanced Micro Devices, Inc. | Enhanced planarity isolation structure and method |
FR2806834B1 (fr) * | 2000-03-24 | 2003-09-12 | St Microelectronics Sa | Procede de formation de zone isolante |
JP4068286B2 (ja) | 2000-06-30 | 2008-03-26 | 株式会社東芝 | 半導体装置の製造方法 |
US10879108B2 (en) * | 2016-11-15 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Topographic planarization method for lithography process |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3880684A (en) * | 1973-08-03 | 1975-04-29 | Mitsubishi Electric Corp | Process for preparing semiconductor |
US3918149A (en) * | 1974-06-28 | 1975-11-11 | Intel Corp | Al/Si metallization process |
JPS5249772A (en) * | 1975-10-18 | 1977-04-21 | Hitachi Ltd | Process for production of semiconductor device |
GB1485015A (en) * | 1974-10-29 | 1977-09-08 | Mullard Ltd | Semi-conductor device manufacture |
US4117301A (en) * | 1975-07-21 | 1978-09-26 | Rca Corporation | Method of making a submicrometer aperture in a substrate |
JPS5226182A (en) * | 1975-08-25 | 1977-02-26 | Hitachi Ltd | Manufacturing method of semi-conductor unit |
US4035276A (en) * | 1976-04-29 | 1977-07-12 | Ibm Corporation | Making coplanar layers of thin films |
US4076680A (en) * | 1976-08-05 | 1978-02-28 | Allied Chemical Corporation | Poly(hydroxymethylene) solutions |
JPS5328530A (en) * | 1976-08-30 | 1978-03-16 | Hitachi Ltd | Method of etching surfaces of solids |
JPS6047738B2 (ja) * | 1977-09-14 | 1985-10-23 | 松下電器産業株式会社 | 半導体装置のコンタクト形成方法 |
US4181564A (en) * | 1978-04-24 | 1980-01-01 | Bell Telephone Laboratories, Incorporated | Fabrication of patterned silicon nitride insulating layers having gently sloping sidewalls |
US4135998A (en) * | 1978-04-26 | 1979-01-23 | International Business Machines Corp. | Method for forming pt-si schottky barrier contact |
US4307180A (en) * | 1980-08-22 | 1981-12-22 | International Business Machines Corp. | Process of forming recessed dielectric regions in a monocrystalline silicon substrate |
US4326936A (en) * | 1980-10-14 | 1982-04-27 | Rockwell International Corporation | Repeatable method for sloping walls of thin film material |
-
1981
- 1981-06-30 US US06/279,129 patent/US4389294A/en not_active Expired - Lifetime
-
1982
- 1982-06-15 EP EP82105210A patent/EP0068275B1/de not_active Expired
- 1982-06-15 DE DE8282105210T patent/DE3279917D1/de not_active Expired
- 1982-06-25 JP JP57108589A patent/JPS589338A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
EP0068275B1 (de) | 1989-08-30 |
JPH0371781B2 (de) | 1991-11-14 |
JPS589338A (ja) | 1983-01-19 |
EP0068275A3 (en) | 1986-10-01 |
US4389294A (en) | 1983-06-21 |
EP0068275A2 (de) | 1983-01-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |