DE3279238D1 - Programmable structures - Google Patents
Programmable structuresInfo
- Publication number
- DE3279238D1 DE3279238D1 DE8282104516T DE3279238T DE3279238D1 DE 3279238 D1 DE3279238 D1 DE 3279238D1 DE 8282104516 T DE8282104516 T DE 8282104516T DE 3279238 T DE3279238 T DE 3279238T DE 3279238 D1 DE3279238 D1 DE 3279238D1
- Authority
- DE
- Germany
- Prior art keywords
- programmable structures
- programmable
- structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/273,520 US4412308A (en) | 1981-06-15 | 1981-06-15 | Programmable bipolar structures |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3279238D1 true DE3279238D1 (en) | 1988-12-29 |
Family
ID=23044273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282104516T Expired DE3279238D1 (en) | 1981-06-15 | 1982-05-24 | Programmable structures |
Country Status (5)
Country | Link |
---|---|
US (1) | US4412308A (de) |
EP (1) | EP0067325B1 (de) |
JP (1) | JPS5846867B2 (de) |
CA (1) | CA1184299A (de) |
DE (1) | DE3279238D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4734885A (en) * | 1985-10-17 | 1988-03-29 | Harris Corporation | Programming arrangement for programmable devices |
JPS62183097U (de) * | 1986-05-12 | 1987-11-20 | ||
US5852323A (en) * | 1997-01-16 | 1998-12-22 | Xilinx, Inc. | Electrically programmable antifuse using metal penetration of a P-N junction |
US8247840B2 (en) * | 2004-07-07 | 2012-08-21 | Semi Solutions, Llc | Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode |
US7375402B2 (en) * | 2004-07-07 | 2008-05-20 | Semi Solutions, Llc | Method and apparatus for increasing stability of MOS memory cells |
US7683433B2 (en) * | 2004-07-07 | 2010-03-23 | Semi Solution, Llc | Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors |
US7224205B2 (en) * | 2004-07-07 | 2007-05-29 | Semi Solutions, Llc | Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors |
US7651905B2 (en) * | 2005-01-12 | 2010-01-26 | Semi Solutions, Llc | Apparatus and method for reducing gate leakage in deep sub-micron MOS transistors using semi-rectifying contacts |
US7898297B2 (en) * | 2005-01-04 | 2011-03-01 | Semi Solution, Llc | Method and apparatus for dynamic threshold voltage control of MOS transistors in dynamic logic circuits |
US7863689B2 (en) * | 2006-09-19 | 2011-01-04 | Semi Solutions, Llc. | Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistor |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6606912A (de) * | 1966-05-19 | 1967-11-20 | ||
GB1220843A (en) * | 1967-05-30 | 1971-01-27 | Gen Electric Information Syste | Integrated assembly of circuit elements |
BE755039A (fr) * | 1969-09-15 | 1971-02-01 | Ibm | Memoire semi-conductrice permanente |
DE2023219C3 (de) * | 1970-05-12 | 1979-09-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Programmierbarer Halbleiter-Festwertspeicher |
US3848238A (en) * | 1970-07-13 | 1974-11-12 | Intersil Inc | Double junction read only memory |
US3717852A (en) * | 1971-09-17 | 1973-02-20 | Ibm | Electronically rewritable read-only memory using via connections |
JPS5240081A (en) * | 1975-09-26 | 1977-03-28 | Hitachi Ltd | Bi-polar rom |
FR2334170A1 (fr) * | 1975-12-05 | 1977-07-01 | Honeywell Bull Soc Ind | Memoire morte integree |
US4152627A (en) * | 1977-06-10 | 1979-05-01 | Monolithic Memories Inc. | Low power write-once, read-only memory array |
US4145702A (en) * | 1977-07-05 | 1979-03-20 | Burroughs Corporation | Electrically programmable read-only-memory device |
JPS607388B2 (ja) * | 1978-09-08 | 1985-02-23 | 富士通株式会社 | 半導体記憶装置 |
-
1981
- 1981-06-15 US US06/273,520 patent/US4412308A/en not_active Expired - Lifetime
-
1982
- 1982-03-23 CA CA000399151A patent/CA1184299A/en not_active Expired
- 1982-05-24 DE DE8282104516T patent/DE3279238D1/de not_active Expired
- 1982-05-24 EP EP82104516A patent/EP0067325B1/de not_active Expired
- 1982-06-15 JP JP57101478A patent/JPS5846867B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1184299A (en) | 1985-03-19 |
EP0067325B1 (de) | 1988-11-23 |
EP0067325A2 (de) | 1982-12-22 |
EP0067325A3 (en) | 1985-12-04 |
JPS5846867B2 (ja) | 1983-10-19 |
US4412308A (en) | 1983-10-25 |
JPS57211769A (en) | 1982-12-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |