DE3276559D1 - Temperature-compensated zener diode stable at irradiation, and process for producing such a diode - Google Patents

Temperature-compensated zener diode stable at irradiation, and process for producing such a diode

Info

Publication number
DE3276559D1
DE3276559D1 DE8282401163T DE3276559T DE3276559D1 DE 3276559 D1 DE3276559 D1 DE 3276559D1 DE 8282401163 T DE8282401163 T DE 8282401163T DE 3276559 T DE3276559 T DE 3276559T DE 3276559 D1 DE3276559 D1 DE 3276559D1
Authority
DE
Germany
Prior art keywords
diode
irradiation
producing
temperature
stable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282401163T
Other languages
German (de)
Inventor
Jacques Champon
Bruno Maurice
Michel Roumeguere
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Application granted granted Critical
Publication of DE3276559D1 publication Critical patent/DE3276559D1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Amplifiers (AREA)
DE8282401163T 1981-06-30 1982-06-24 Temperature-compensated zener diode stable at irradiation, and process for producing such a diode Expired DE3276559D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8112846A FR2508703A1 (en) 1981-06-30 1981-06-30 ZENER DIODE COMPENSEE IN TEMPERATURE AND STABLE UNDER IRRADIATION AND METHOD OF MANUFACTURING SUCH DIODE

Publications (1)

Publication Number Publication Date
DE3276559D1 true DE3276559D1 (en) 1987-07-16

Family

ID=9260028

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282401163T Expired DE3276559D1 (en) 1981-06-30 1982-06-24 Temperature-compensated zener diode stable at irradiation, and process for producing such a diode

Country Status (5)

Country Link
US (1) US4554568A (en)
EP (1) EP0069634B1 (en)
JP (1) JPS589375A (en)
DE (1) DE3276559D1 (en)
FR (1) FR2508703A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61198779A (en) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan Electrostatic induction thyristor having gates on both surfaces and manufacture thereof
US4886762A (en) * 1985-08-06 1989-12-12 Motorola Inc. Monolithic temperature compensated voltage-reference diode and method for its manufacture
US4870467A (en) * 1985-08-06 1989-09-26 Motorola, Inc. Monolithic temperature compensated voltage-reference diode and method of its manufacture
US5166769A (en) * 1988-07-18 1992-11-24 General Instrument Corporation Passitvated mesa semiconductor and method for making same
DE3930697A1 (en) * 1989-09-14 1991-03-28 Bosch Gmbh Robert CONTROLLABLE TEMPERATURE COMPENSATING VOLTAGE LIMITING DEVICE
JP3074736B2 (en) * 1990-12-28 2000-08-07 富士電機株式会社 Semiconductor device
DE10032543A1 (en) * 2000-07-05 2002-01-17 Bosch Gmbh Robert Arrangement with P-doped and N-doped semiconductor layers and method for their production
US20030222272A1 (en) * 2002-05-30 2003-12-04 Hamerski Roman J. Semiconductor devices using minority carrier controlling substances

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE552928A (en) * 1957-03-18
US3416046A (en) * 1965-12-13 1968-12-10 Dickson Electronics Corp Encased zener diode assembly and method of producing same
US3440113A (en) * 1966-09-19 1969-04-22 Westinghouse Electric Corp Process for diffusing gold into semiconductor material
US3723832A (en) * 1970-06-01 1973-03-27 Licentia Gmbh Zener diode and method of producing such a zener diode
US3953254A (en) * 1972-11-07 1976-04-27 Thomson-Csf Method of producing temperature compensated reference diodes utilizing selective epitaxial growth
US4079402A (en) * 1973-07-09 1978-03-14 National Semiconductor Corporation Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface
FR2284987A1 (en) * 1974-09-10 1976-04-09 Thomson Csf PARTICULAR SEMI-CONDUCTIVE STRUCTURE OF THERMOIONIC INJECTION DIODE WITH LOW NOISE
JPS5378788A (en) * 1976-12-23 1978-07-12 Hitachi Ltd Temperature-compensation-type constant voltage element
US4349394A (en) * 1979-12-06 1982-09-14 Siemens Corporation Method of making a zener diode utilizing gas-phase epitaxial deposition

Also Published As

Publication number Publication date
FR2508703A1 (en) 1982-12-31
EP0069634A2 (en) 1983-01-12
EP0069634A3 (en) 1984-08-22
FR2508703B1 (en) 1984-10-26
JPS589375A (en) 1983-01-19
EP0069634B1 (en) 1987-06-10
US4554568A (en) 1985-11-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee