DE3276559D1 - Temperature-compensated zener diode stable at irradiation, and process for producing such a diode - Google Patents
Temperature-compensated zener diode stable at irradiation, and process for producing such a diodeInfo
- Publication number
- DE3276559D1 DE3276559D1 DE8282401163T DE3276559T DE3276559D1 DE 3276559 D1 DE3276559 D1 DE 3276559D1 DE 8282401163 T DE8282401163 T DE 8282401163T DE 3276559 T DE3276559 T DE 3276559T DE 3276559 D1 DE3276559 D1 DE 3276559D1
- Authority
- DE
- Germany
- Prior art keywords
- diode
- irradiation
- producing
- temperature
- stable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8112846A FR2508703A1 (en) | 1981-06-30 | 1981-06-30 | ZENER DIODE COMPENSEE IN TEMPERATURE AND STABLE UNDER IRRADIATION AND METHOD OF MANUFACTURING SUCH DIODE |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3276559D1 true DE3276559D1 (en) | 1987-07-16 |
Family
ID=9260028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282401163T Expired DE3276559D1 (en) | 1981-06-30 | 1982-06-24 | Temperature-compensated zener diode stable at irradiation, and process for producing such a diode |
Country Status (5)
Country | Link |
---|---|
US (1) | US4554568A (en) |
EP (1) | EP0069634B1 (en) |
JP (1) | JPS589375A (en) |
DE (1) | DE3276559D1 (en) |
FR (1) | FR2508703A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61198779A (en) * | 1985-02-28 | 1986-09-03 | Res Dev Corp Of Japan | Electrostatic induction thyristor having gates on both surfaces and manufacture thereof |
US4870467A (en) * | 1985-08-06 | 1989-09-26 | Motorola, Inc. | Monolithic temperature compensated voltage-reference diode and method of its manufacture |
US4886762A (en) * | 1985-08-06 | 1989-12-12 | Motorola Inc. | Monolithic temperature compensated voltage-reference diode and method for its manufacture |
US5166769A (en) * | 1988-07-18 | 1992-11-24 | General Instrument Corporation | Passitvated mesa semiconductor and method for making same |
DE3930697A1 (en) * | 1989-09-14 | 1991-03-28 | Bosch Gmbh Robert | CONTROLLABLE TEMPERATURE COMPENSATING VOLTAGE LIMITING DEVICE |
JP3074736B2 (en) * | 1990-12-28 | 2000-08-07 | 富士電機株式会社 | Semiconductor device |
DE10032543A1 (en) * | 2000-07-05 | 2002-01-17 | Bosch Gmbh Robert | Arrangement with P-doped and N-doped semiconductor layers and method for their production |
US20030222272A1 (en) * | 2002-05-30 | 2003-12-04 | Hamerski Roman J. | Semiconductor devices using minority carrier controlling substances |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE552928A (en) * | 1957-03-18 | |||
US3416046A (en) * | 1965-12-13 | 1968-12-10 | Dickson Electronics Corp | Encased zener diode assembly and method of producing same |
US3440113A (en) * | 1966-09-19 | 1969-04-22 | Westinghouse Electric Corp | Process for diffusing gold into semiconductor material |
US3723832A (en) * | 1970-06-01 | 1973-03-27 | Licentia Gmbh | Zener diode and method of producing such a zener diode |
US3953254A (en) * | 1972-11-07 | 1976-04-27 | Thomson-Csf | Method of producing temperature compensated reference diodes utilizing selective epitaxial growth |
US4079402A (en) * | 1973-07-09 | 1978-03-14 | National Semiconductor Corporation | Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface |
FR2284987A1 (en) * | 1974-09-10 | 1976-04-09 | Thomson Csf | PARTICULAR SEMI-CONDUCTIVE STRUCTURE OF THERMOIONIC INJECTION DIODE WITH LOW NOISE |
JPS5378788A (en) * | 1976-12-23 | 1978-07-12 | Hitachi Ltd | Temperature-compensation-type constant voltage element |
US4349394A (en) * | 1979-12-06 | 1982-09-14 | Siemens Corporation | Method of making a zener diode utilizing gas-phase epitaxial deposition |
-
1981
- 1981-06-30 FR FR8112846A patent/FR2508703A1/en active Granted
-
1982
- 1982-06-24 EP EP82401163A patent/EP0069634B1/en not_active Expired
- 1982-06-24 DE DE8282401163T patent/DE3276559D1/en not_active Expired
- 1982-06-24 US US06/391,919 patent/US4554568A/en not_active Expired - Fee Related
- 1982-06-29 JP JP57110935A patent/JPS589375A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0069634A3 (en) | 1984-08-22 |
FR2508703A1 (en) | 1982-12-31 |
EP0069634A2 (en) | 1983-01-12 |
FR2508703B1 (en) | 1984-10-26 |
JPS589375A (en) | 1983-01-19 |
EP0069634B1 (en) | 1987-06-10 |
US4554568A (en) | 1985-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |