DE3269712D1 - Process for manufacturing a semiconductor device using a diffusion step involving a previous implantation step, and device made by that process - Google Patents

Process for manufacturing a semiconductor device using a diffusion step involving a previous implantation step, and device made by that process

Info

Publication number
DE3269712D1
DE3269712D1 DE8282402141T DE3269712T DE3269712D1 DE 3269712 D1 DE3269712 D1 DE 3269712D1 DE 8282402141 T DE8282402141 T DE 8282402141T DE 3269712 T DE3269712 T DE 3269712T DE 3269712 D1 DE3269712 D1 DE 3269712D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
previous implantation
device made
involving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282402141T
Other languages
German (de)
English (en)
Inventor
Michel Salvi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE3269712D1 publication Critical patent/DE3269712D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H01L21/2233—Diffusion into or out of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8282402141T 1981-11-26 1982-11-24 Process for manufacturing a semiconductor device using a diffusion step involving a previous implantation step, and device made by that process Expired DE3269712D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8122167A FR2517120A1 (fr) 1981-11-26 1981-11-26 Procede de fabrication d'un composant semiconducteur par diffusion avec implantation ionique prealable et composant obtenu

Publications (1)

Publication Number Publication Date
DE3269712D1 true DE3269712D1 (en) 1986-04-10

Family

ID=9264399

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282402141T Expired DE3269712D1 (en) 1981-11-26 1982-11-24 Process for manufacturing a semiconductor device using a diffusion step involving a previous implantation step, and device made by that process

Country Status (5)

Country Link
US (1) US4545824A (enExample)
EP (1) EP0080937B1 (enExample)
CA (1) CA1206628A (enExample)
DE (1) DE3269712D1 (enExample)
FR (1) FR2517120A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60220975A (ja) * 1984-04-18 1985-11-05 Toshiba Corp ＧａＡｓ電界効果トランジスタ及びその製造方法
US4632713A (en) * 1985-07-31 1986-12-30 Texas Instruments Incorporated Process of making Schottky barrier devices formed by diffusion before contacting
US4673446A (en) * 1985-12-12 1987-06-16 The United States Of America As Represented By The Secretary Of The Navy Method of forming thermally stable high resistivity regions in n-type indium phosphide by oxygen implantation
US4738934A (en) * 1986-05-16 1988-04-19 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making indium phosphide devices
US4818721A (en) * 1987-07-29 1989-04-04 American Telephone And Telegraph Company, At&T Bell Laboratories Ion implantation into In-based group III-V compound semiconductors
JPH01220822A (ja) * 1988-02-29 1989-09-04 Mitsubishi Electric Corp 化合物半導体装置の製造方法
US5037766A (en) * 1988-12-06 1991-08-06 Industrial Technology Research Institute Method of fabricating a thin film polysilicon thin film transistor or resistor
JPH0383332A (ja) * 1989-08-28 1991-04-09 Sharp Corp 炭化珪素半導体装置の製造方法
US5374589A (en) * 1994-04-05 1994-12-20 The United States Of America As Represented By The Secretary Of The Navy Process of making a bistable photoconductive component
US6335562B1 (en) 1999-12-09 2002-01-01 The United States Of America As Represented By The Secretary Of The Navy Method and design for the suppression of single event upset failures in digital circuits made from GaAs and related compounds

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1098564A (en) * 1966-09-20 1968-01-10 Standard Telephones Cables Ltd A method for producing gallium arsenide devices
US4017887A (en) * 1972-07-25 1977-04-12 The United States Of America As Represented By The Secretary Of The Air Force Method and means for passivation and isolation in semiconductor devices
JPS5459074A (en) * 1977-10-20 1979-05-12 Toshiba Corp Semiconductor device
US4252580A (en) * 1977-10-27 1981-02-24 Messick Louis J Method of producing a microwave InP/SiO2 insulated gate field effect transistor
US4372032A (en) * 1979-09-04 1983-02-08 The United States Of America As Represented By The Secretary Of The Navy Normally off InP field effect transistor making process
US4383869A (en) * 1981-06-15 1983-05-17 Rca Corporation Method for enhancing electron mobility in GaAs
FR2513439B1 (fr) * 1981-09-18 1985-09-13 Labo Electronique Physique Procede de traitement de substrat de gaas, par implantation ionique, et substrats ainsi obtenus
US4391651A (en) * 1981-10-15 1983-07-05 The United States Of America As Represented By The Secretary Of The Navy Method of forming a hyperabrupt interface in a GaAs substrate

Also Published As

Publication number Publication date
EP0080937B1 (fr) 1986-03-05
FR2517120B1 (enExample) 1985-05-17
EP0080937A1 (fr) 1983-06-08
FR2517120A1 (fr) 1983-05-27
US4545824A (en) 1985-10-08
CA1206628A (en) 1986-06-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee