DE3266962D1 - Semiconductor device having a low parasitive capacitance with beam-lead-type external connectors - Google Patents

Semiconductor device having a low parasitive capacitance with beam-lead-type external connectors

Info

Publication number
DE3266962D1
DE3266962D1 DE8282402161T DE3266962T DE3266962D1 DE 3266962 D1 DE3266962 D1 DE 3266962D1 DE 8282402161 T DE8282402161 T DE 8282402161T DE 3266962 T DE3266962 T DE 3266962T DE 3266962 D1 DE3266962 D1 DE 3266962D1
Authority
DE
Germany
Prior art keywords
parasitive
capacitance
lead
semiconductor device
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282402161T
Other languages
English (en)
Inventor
Raymond Henry
Jean-Victor Bouvet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3266962D1 publication Critical patent/DE3266962D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4822—Beam leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
DE8282402161T 1981-12-09 1982-11-26 Semiconductor device having a low parasitive capacitance with beam-lead-type external connectors Expired DE3266962D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8123028A FR2517883A1 (fr) 1981-12-09 1981-12-09 Dispositif semi-conducteur a faible capacite parasite muni de connexions externes prises au moyen de poutres

Publications (1)

Publication Number Publication Date
DE3266962D1 true DE3266962D1 (en) 1985-11-21

Family

ID=9264840

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282402161T Expired DE3266962D1 (en) 1981-12-09 1982-11-26 Semiconductor device having a low parasitive capacitance with beam-lead-type external connectors

Country Status (4)

Country Link
EP (1) EP0081414B1 (de)
JP (1) JPS58106849A (de)
DE (1) DE3266962D1 (de)
FR (1) FR2517883A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2540290A1 (fr) * 1983-01-28 1984-08-03 Thomson Csf Diode hyperfrequence a faible capacite parasite, et procede de realisation d'une telle diode
FR2604828B1 (fr) * 1986-10-06 1988-12-23 Centre Nat Rech Scient Procede de fabrication d'une diode p+nn+ et d'un transistor bipolaire comportant cette diode, utilisant l'effet de neutralisation des atomes donneurs par l'hydrogene atomique
JPS63142820A (ja) * 1986-12-05 1988-06-15 Nec Corp 砒化ガリウム・デバイス・チツプ
US5378939A (en) * 1987-10-06 1995-01-03 The Board Of Trustees Of The Leland Stanford Junior University Gallium arsenide monolithically integrated sampling head using equivalent time sampling having a bandwidth greater than 100 Ghz
US5014018A (en) * 1987-10-06 1991-05-07 Stanford University Nonlinear transmission line for generation of picosecond electrical transients
FR2633454B1 (fr) * 1988-06-24 1992-01-17 Thomson Hybrides Microondes Dispositif d'accrochage de poutre sur un composant semiconducteur et son procede de fabrication
US7417266B1 (en) 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode
US7436039B2 (en) 2005-01-06 2008-10-14 Velox Semiconductor Corporation Gallium nitride semiconductor device
US8026568B2 (en) 2005-11-15 2011-09-27 Velox Semiconductor Corporation Second Schottky contact metal layer to improve GaN Schottky diode performance
US7939853B2 (en) 2007-03-20 2011-05-10 Power Integrations, Inc. Termination and contact structures for a high voltage GaN-based heterojunction transistor
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
US11469333B1 (en) 2020-02-19 2022-10-11 Semiq Incorporated Counter-doped silicon carbide Schottky barrier diode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4097890A (en) * 1976-06-23 1978-06-27 Hewlett-Packard Company Low parasitic capacitance and resistance beamlead semiconductor component and method of manufacture
GB2067354B (en) * 1980-01-09 1984-04-18 Aei Semiconductors Ltd Mounting for a sc device
US4301233A (en) * 1980-05-29 1981-11-17 Eaton Corporation Beam lead Schottky barrier diode for operation at millimeter and submillimeter wave frequencies

Also Published As

Publication number Publication date
EP0081414A1 (de) 1983-06-15
FR2517883B1 (de) 1985-05-17
FR2517883A1 (fr) 1983-06-10
JPS58106849A (ja) 1983-06-25
EP0081414B1 (de) 1985-10-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee