DE3264500D1 - Processes for the fabrication of field effect transistors - Google Patents
Processes for the fabrication of field effect transistorsInfo
- Publication number
- DE3264500D1 DE3264500D1 DE8282101969T DE3264500T DE3264500D1 DE 3264500 D1 DE3264500 D1 DE 3264500D1 DE 8282101969 T DE8282101969 T DE 8282101969T DE 3264500 T DE3264500 T DE 3264500T DE 3264500 D1 DE3264500 D1 DE 3264500D1
- Authority
- DE
- Germany
- Prior art keywords
- fabrication
- processes
- field effect
- effect transistors
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US27130381A | 1981-06-08 | 1981-06-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3264500D1 true DE3264500D1 (en) | 1985-08-08 |
Family
ID=23035012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282101969T Expired DE3264500D1 (en) | 1981-06-08 | 1982-03-12 | Processes for the fabrication of field effect transistors |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0066675B1 (de) |
JP (1) | JPS57204172A (de) |
DE (1) | DE3264500D1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961967A (ja) * | 1982-09-30 | 1984-04-09 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 半導体装置 |
US4587709A (en) * | 1983-06-06 | 1986-05-13 | International Business Machines Corporation | Method of making short channel IGFET |
US4532698A (en) * | 1984-06-22 | 1985-08-06 | International Business Machines Corporation | Method of making ultrashort FET using oblique angle metal deposition and ion implantation |
US5124769A (en) * | 1990-03-02 | 1992-06-23 | Nippon Telegraph And Telephone Corporation | Thin film transistor |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3837935A (en) * | 1971-05-28 | 1974-09-24 | Fujitsu Ltd | Semiconductor devices and method of manufacturing the same |
DE2729658A1 (de) * | 1977-06-30 | 1979-01-11 | Siemens Ag | Feldeffekttransistor mit extrem kurzer kanallaenge |
US4216573A (en) * | 1978-05-08 | 1980-08-12 | International Business Machines Corporation | Three mask process for making field effect transistors |
CA1142271A (en) * | 1979-03-28 | 1983-03-01 | Thomas E. Hendrickson | Field effect semiconductor device |
US4334292A (en) * | 1980-05-27 | 1982-06-08 | International Business Machines Corp. | Low voltage electrically erasable programmable read only memory |
-
1982
- 1982-03-03 JP JP57032528A patent/JPS57204172A/ja active Pending
- 1982-03-12 DE DE8282101969T patent/DE3264500D1/de not_active Expired
- 1982-03-12 EP EP82101969A patent/EP0066675B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0066675A1 (de) | 1982-12-15 |
EP0066675B1 (de) | 1985-07-03 |
JPS57204172A (en) | 1982-12-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |