DE3227826C2 - - Google Patents
Info
- Publication number
- DE3227826C2 DE3227826C2 DE3227826A DE3227826A DE3227826C2 DE 3227826 C2 DE3227826 C2 DE 3227826C2 DE 3227826 A DE3227826 A DE 3227826A DE 3227826 A DE3227826 A DE 3227826A DE 3227826 C2 DE3227826 C2 DE 3227826C2
- Authority
- DE
- Germany
- Prior art keywords
- vertical
- section
- conductivity type
- charge
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 56
- 239000012535 impurity Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 230000005570 vertical transmission Effects 0.000 claims description 12
- 230000001419 dependent effect Effects 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- 230000005571 horizontal transmission Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 5
- -1 phosphorus ions Chemical class 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 206010021033 Hypomenorrhoea Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56117302A JPS5819080A (ja) | 1981-07-27 | 1981-07-27 | 固体撮像素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3227826A1 DE3227826A1 (de) | 1983-02-10 |
| DE3227826C2 true DE3227826C2 (US07291463-20071106-C00074.png) | 1992-09-03 |
Family
ID=14708383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823227826 Granted DE3227826A1 (de) | 1981-07-27 | 1982-07-26 | Bildwandler in festkoerper-ausfuehrung |
Country Status (7)
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5838081A (ja) * | 1981-08-29 | 1983-03-05 | Sony Corp | 固体撮像装置 |
| JPS58142570A (ja) * | 1982-02-19 | 1983-08-24 | Sony Corp | 固体撮像装置 |
| JPS58210663A (ja) * | 1982-06-01 | 1983-12-07 | Mitsubishi Electric Corp | 固体撮像装置 |
| JPS5931056A (ja) * | 1982-08-13 | 1984-02-18 | Mitsubishi Electric Corp | 固体撮像素子 |
| JPS6119166A (ja) * | 1984-07-05 | 1986-01-28 | Matsushita Electronics Corp | 固体撮像装置 |
| JPH07107928B2 (ja) * | 1986-03-25 | 1995-11-15 | ソニー株式会社 | 固体撮像装置 |
| US4901129A (en) * | 1987-04-10 | 1990-02-13 | Texas Instruments Incorporated | Bulk charge modulated transistor threshold image sensor elements and method of making |
| US4984047A (en) * | 1988-03-21 | 1991-01-08 | Eastman Kodak Company | Solid-state image sensor |
| US5355013A (en) * | 1988-05-25 | 1994-10-11 | University Of Hawaii | Integrated radiation pixel detector with PIN diode array |
| US5066994A (en) * | 1989-03-31 | 1991-11-19 | Eastman Kodak Company | Image sensor |
| US5237197A (en) * | 1989-06-26 | 1993-08-17 | University Of Hawaii | Integrated VLSI radiation/particle detector with biased pin diodes |
| US5051797A (en) * | 1989-09-05 | 1991-09-24 | Eastman Kodak Company | Charge-coupled device (CCD) imager and method of operation |
| US5047862A (en) * | 1989-10-12 | 1991-09-10 | Eastman Kodak Company | Solid-state imager |
| US4974043A (en) * | 1989-10-12 | 1990-11-27 | Eastman Kodak Company | Solid-state image sensor |
| KR930002818B1 (ko) * | 1990-05-11 | 1993-04-10 | 금성일렉트론주식회사 | Ccd 영상소자 |
| KR920007355B1 (ko) * | 1990-05-11 | 1992-08-31 | 금성일렉트론 주식회사 | Ccd영상 소자의 구조 및 제조방법 |
| US5276341A (en) * | 1990-05-11 | 1994-01-04 | Gold Star Electron Co., Ltd. | Structure for fabrication of a CCD image sensor |
| US5130774A (en) * | 1990-07-12 | 1992-07-14 | Eastman Kodak Company | Antiblooming structure for solid-state image sensor |
| JPH04286361A (ja) * | 1991-03-15 | 1992-10-12 | Sony Corp | 固体撮像装置 |
| US5276520A (en) * | 1991-06-07 | 1994-01-04 | Eastman Kodak Company | Enhancing exposure latitude of image sensors |
| EP0544260A1 (en) * | 1991-11-25 | 1993-06-02 | Eastman Kodak Company | Antiblooming structure for CCD image sensor |
| US5270558A (en) * | 1991-12-03 | 1993-12-14 | Massachusetts Institute Of Technology | Integrated electronic shutter for charge-coupled devices |
| JPH08264747A (ja) * | 1995-03-16 | 1996-10-11 | Eastman Kodak Co | コンテナ側方オーバーフロードレインインプラントを有する固体画像化器及びその製造方法 |
| JP3467918B2 (ja) * | 1995-08-04 | 2003-11-17 | ソニー株式会社 | 固体撮像素子の製造方法及び固体撮像素子 |
| US5990953A (en) * | 1995-12-15 | 1999-11-23 | Nec Corporation | Solid state imaging device having overflow drain region provided in parallel to CCD shift register |
| WO2009093221A2 (en) * | 2008-01-25 | 2009-07-30 | Nxp B.V. | Layout for adaptive gain photodetectors |
| JP4873266B2 (ja) * | 2008-11-14 | 2012-02-08 | 東甫▲るぃ▼業有限公司 | アルミサッシの上板の装着に適するストッパー |
| US8329499B2 (en) * | 2008-12-10 | 2012-12-11 | Truesense Imaging, Inc. | Method of forming lateral overflow drain and channel stop regions in image sensors |
| US8466000B2 (en) | 2011-04-14 | 2013-06-18 | United Microelectronics Corp. | Backside-illuminated image sensor and fabricating method thereof |
| US20130010165A1 (en) | 2011-07-05 | 2013-01-10 | United Microelectronics Corp. | Optical micro structure, method for fabricating the same and applications thereof |
| US9312292B2 (en) | 2011-10-26 | 2016-04-12 | United Microelectronics Corp. | Back side illumination image sensor and manufacturing method thereof |
| US8318579B1 (en) | 2011-12-01 | 2012-11-27 | United Microelectronics Corp. | Method for fabricating semiconductor device |
| US8815102B2 (en) | 2012-03-23 | 2014-08-26 | United Microelectronics Corporation | Method for fabricating patterned dichroic film |
| US9401441B2 (en) | 2012-06-14 | 2016-07-26 | United Microelectronics Corporation | Back-illuminated image sensor with dishing depression surface |
| US8779344B2 (en) | 2012-07-11 | 2014-07-15 | United Microelectronics Corp. | Image sensor including a deep trench isolation (DTI)that does not contact a connecting element physically |
| US8828779B2 (en) | 2012-11-01 | 2014-09-09 | United Microelectronics Corp. | Backside illumination (BSI) CMOS image sensor process |
| US8779484B2 (en) | 2012-11-29 | 2014-07-15 | United Microelectronics Corp. | Image sensor and process thereof |
| US9279923B2 (en) | 2013-03-26 | 2016-03-08 | United Microelectronics Corporation | Color filter layer and method of fabricating the same |
| US9537040B2 (en) | 2013-05-09 | 2017-01-03 | United Microelectronics Corp. | Complementary metal-oxide-semiconductor image sensor and manufacturing method thereof |
| US9129876B2 (en) | 2013-05-28 | 2015-09-08 | United Microelectronics Corp. | Image sensor and process thereof |
| US9054106B2 (en) | 2013-11-13 | 2015-06-09 | United Microelectronics Corp. | Semiconductor structure and method for manufacturing the same |
| US9841319B2 (en) | 2013-11-19 | 2017-12-12 | United Microelectronics Corp. | Light detecting device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3896474A (en) * | 1973-09-10 | 1975-07-22 | Fairchild Camera Instr Co | Charge coupled area imaging device with column anti-blooming control |
| US4025943A (en) * | 1976-03-22 | 1977-05-24 | Canadian Patents And Development Limited | Photogeneration channel in front illuminated solid state silicon imaging devices |
| GB1595253A (en) * | 1977-01-24 | 1981-08-12 | Hitachi Ltd | Solid-state imaging devices |
| JPS5518064A (en) * | 1978-07-26 | 1980-02-07 | Sony Corp | Charge trsnsfer device |
| JPS56104582A (en) * | 1980-01-25 | 1981-08-20 | Toshiba Corp | Solid image pickup device |
| JPS57162364A (en) * | 1981-03-30 | 1982-10-06 | Matsushita Electric Ind Co Ltd | Solid state image pickup device |
-
1981
- 1981-07-27 JP JP56117302A patent/JPS5819080A/ja active Granted
-
1982
- 1982-07-13 GB GB08220305A patent/GB2103876B/en not_active Expired
- 1982-07-26 NL NL8202998A patent/NL8202998A/nl not_active Application Discontinuation
- 1982-07-26 DE DE19823227826 patent/DE3227826A1/de active Granted
- 1982-07-26 CA CA000408071A patent/CA1173544A/en not_active Expired
- 1982-07-27 FR FR8213127A patent/FR2510308A1/fr active Granted
- 1982-07-27 US US06/402,356 patent/US4460912A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2510308A1 (fr) | 1983-01-28 |
| JPS6329873B2 (US07291463-20071106-C00074.png) | 1988-06-15 |
| US4460912A (en) | 1984-07-17 |
| JPS5819080A (ja) | 1983-02-03 |
| DE3227826A1 (de) | 1983-02-10 |
| CA1173544A (en) | 1984-08-28 |
| FR2510308B1 (US07291463-20071106-C00074.png) | 1985-05-24 |
| GB2103876B (en) | 1985-07-24 |
| GB2103876A (en) | 1983-02-23 |
| NL8202998A (nl) | 1983-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3227826C2 (US07291463-20071106-C00074.png) | ||
| DE69033565T2 (de) | Bildfächensensor vom Interline-Transfer-Typ mit einer Elektrodenstruktur für jeden Pixel | |
| DE3689409T2 (de) | Verfahren zum Betreiben eines Festkörperbildsensors. | |
| DE3104489C2 (US07291463-20071106-C00074.png) | ||
| DE3941944C2 (de) | Ladungsgekoppelte Vorrichtungen zum Verschieben von Ladungen und Verfahren zu deren Herstellung | |
| DE2842346C2 (de) | CCD und Verfahren zum Betreiben eines solchen im Zwischenspaltenprinzip | |
| DE4010885C2 (US07291463-20071106-C00074.png) | ||
| DE102006061023A1 (de) | CMOS-Bildsensor und Verfahren zu dessen Herstellung | |
| DE10256201A1 (de) | Halbleiterbaugruppe, die einen Festkörper-Bildsensor mit unterdrückter Änderung der Störstellenkonzentrationsverteilung in einem Halbleitersubstrat hat, und Verfahren zu dessen Herstellung | |
| DE2358672A1 (de) | Halbleiter-anordnung zur abbildung eines bestimmten gebietes und verfahren zur herstellung einer solchen anordnung | |
| EP0007384B1 (de) | Eindimensionaler CCD-Sensor mit Überlaufvorrichtung | |
| DE2804466C3 (de) | Festkörper-Bildaufnahmeeinrichtung | |
| DE3751342T2 (de) | Halbleiter-Bildaufnahmevorrichtung. | |
| DE3640434C2 (US07291463-20071106-C00074.png) | ||
| DE4310915B4 (de) | Festkörperbildsensor mit hohem Signal-Rauschverhältnis | |
| DE69732520T2 (de) | Ladungsgekoppelte anordnung und verfahren zur herstellung | |
| DE69426689T2 (de) | CCD-Bildsensor mit reduziertem Übersprechen zwischen Fotodioden | |
| DE4133996C2 (de) | CCD-Bildwandler | |
| DE69030164T2 (de) | Festkörper-Bildaufnahmevorrichtung und deren Herstellungsmethode | |
| AT393181B (de) | Bildaufnahmeanordnung | |
| DE3432801C2 (US07291463-20071106-C00074.png) | ||
| DE69327608T2 (de) | Ladungübertragungsbildsensor | |
| DE2811961C3 (de) | Farbbildabtasteinrichtung in Festkörpertechnik | |
| DE4234499A1 (de) | Verfahren zum herstellen eines ccd bildsensors | |
| DE4123191A1 (de) | Dreidimensionaler ccd-bildwandler |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN |