DE3174017D1 - Photosensitive compositions - Google Patents

Photosensitive compositions

Info

Publication number
DE3174017D1
DE3174017D1 DE8181110287T DE3174017T DE3174017D1 DE 3174017 D1 DE3174017 D1 DE 3174017D1 DE 8181110287 T DE8181110287 T DE 8181110287T DE 3174017 T DE3174017 T DE 3174017T DE 3174017 D1 DE3174017 D1 DE 3174017D1
Authority
DE
Germany
Prior art keywords
photosensitive compositions
photosensitive
compositions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181110287T
Other languages
English (en)
Inventor
Yamamoto Takeshi
Goto Kiyoshi
Uehara Masafumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP17861880A external-priority patent/JPS57101833A/ja
Priority claimed from JP17861980A external-priority patent/JPS57101834A/ja
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Application granted granted Critical
Publication of DE3174017D1 publication Critical patent/DE3174017D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/20—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/24—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with mixtures of two or more phenols which are not covered by only one of the groups C08G8/10 - C08G8/20
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/22—Compounds containing nitrogen bound to another nitrogen atom
    • C08K5/27—Compounds containing a nitrogen atom bound to two other nitrogen atoms, e.g. diazoamino-compounds
    • C08K5/28—Azides
DE8181110287T 1980-12-17 1981-12-09 Photosensitive compositions Expired DE3174017D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17861880A JPS57101833A (en) 1980-12-17 1980-12-17 Photosensitve composition
JP17861980A JPS57101834A (en) 1980-12-17 1980-12-17 Photosensitive composition

Publications (1)

Publication Number Publication Date
DE3174017D1 true DE3174017D1 (en) 1986-04-10

Family

ID=26498743

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181110287T Expired DE3174017D1 (en) 1980-12-17 1981-12-09 Photosensitive compositions

Country Status (3)

Country Link
US (1) US4477553A (de)
EP (1) EP0054258B1 (de)
DE (1) DE3174017D1 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5986046A (ja) * 1982-11-10 1984-05-18 Fuji Photo Film Co Ltd 感光性組成物
JPS5988734A (ja) * 1982-11-12 1984-05-22 Fuji Photo Film Co Ltd 感光性組成物
DE3323343A1 (de) * 1983-06-29 1985-01-10 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial
DE3421448A1 (de) * 1984-06-08 1985-12-12 Hoechst Ag, 6230 Frankfurt Perfluoralkylgruppen aufweisende polymere, sie enthaltende reproduktionsschichten und deren verwendung fuer den wasserlosen offsetdruck
GB8505402D0 (en) * 1985-03-02 1985-04-03 Ciba Geigy Ag Modified phenolic resins
US5215857A (en) * 1985-08-07 1993-06-01 Japan Synthetic Rubber Co., Ltd. 1,2-quinonediazide containing radiation-sensitive resin composition utilizing methyl 2-hydroxypropionate, ethyl 2-hydroxypropionate or methyl 3-methoxypropionate as the solvent
JPS62123444A (ja) 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
DE3686032T2 (de) * 1985-12-27 1993-02-18 Japan Synthetic Rubber Co Ltd Strahlungsempfindliche positiv arbeitende kunststoffzusammensetzung.
EP0239423B1 (de) * 1986-03-28 1996-03-20 Japan Synthetic Rubber Co., Ltd. Positiv arbeitende photoempfindliche Kunststoffzusammensetzung
JPH0654390B2 (ja) * 1986-07-18 1994-07-20 東京応化工業株式会社 高耐熱性ポジ型ホトレジスト組成物
US4970287A (en) * 1987-11-23 1990-11-13 Olin Hunt Specialty Products Inc. Thermally stable phenolic resin compositions with ortho, ortho methylene linkage
US5024921A (en) * 1987-11-23 1991-06-18 Ocg Microelectronic Materials, Inc. Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin used in a method of forming a positive photoresist image
US4837121A (en) * 1987-11-23 1989-06-06 Olin Hunt Specialty Products Inc. Thermally stable light-sensitive compositions with o-quinone diazide and phenolic resin
US4920028A (en) * 1988-03-31 1990-04-24 Morton Thiokol, Inc. High contrast high thermal stability positive photoresists with mixed cresol and hydroxybenzaldehyde prepared novolak and photosensitive diazoquinone
US4997734A (en) * 1988-08-02 1991-03-05 Morton International, Inc. Method of forming a thermally stable mixed aldehyde novolak resin containing resist pattern and that pattern on a substrate
US5130409A (en) * 1988-04-22 1992-07-14 Morton International, Inc. Mixed aldehyde novolak resins useful as high contrast high thermal stability positive photoresists
EP0345016B1 (de) * 1988-05-31 1994-08-17 Konica Corporation Lichtempfindliche Zusammensetzung und lichtempfindliche lithographische Druckplatte
US5238771A (en) * 1988-05-31 1993-08-24 Konica Corporation Lithographic printing plate utilizing aluminum substrate with photosensitive layer containing o-naphthoquinonediazide sulfonic acid ester, alkali soluble resin and select additive
US5456995A (en) * 1988-07-07 1995-10-10 Sumitomo Chemical Company, Limited Radiation-sensitive positive resist composition
US5861229A (en) * 1988-07-07 1999-01-19 Sumitomo Chemical Company, Limited Radiation-sensitive positive resist composition comprising a 1,2-quinone diazide compound, an alkali-soluble resin and a polyphenol compound
US5001040A (en) * 1988-07-11 1991-03-19 Olin Hunt Specialty Products Inc. Process of forming resist image in positive photoresist with thermally stable phenolic resin
US4959292A (en) * 1988-07-11 1990-09-25 Olin Hunt Specialty Products Inc. Light-sensitive o-quinone diazide composition and product with phenolic novolak prepared by condensation with haloacetoaldehyde
US5753406A (en) * 1988-10-18 1998-05-19 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition
US4992596A (en) * 1988-12-27 1991-02-12 Olin Hunt Specialty Products Inc. Selected trinuclear novolak oligomers and their use in photoactive compounds and radiation sensitive mixtures
US4957846A (en) * 1988-12-27 1990-09-18 Olin Hunt Specialty Products Inc. Radiation sensitive compound and mixtures with trinuclear novolak oligomer with o-naphthoquinone diazide sulfonyl group
US4992356A (en) * 1988-12-27 1991-02-12 Olin Hunt Specialty Products Inc. Process of developing a radiation imaged product with trinuclear novolak oligomer having o-naphthoquinone diazide sulfonyl group
GB8906031D0 (en) * 1989-03-16 1989-04-26 Ici Plc Compound
JP3063148B2 (ja) * 1989-12-27 2000-07-12 住友化学工業株式会社 ポジ型レジスト組成物
TW202504B (de) * 1990-02-23 1993-03-21 Sumitomo Chemical Co
US5279918A (en) * 1990-05-02 1994-01-18 Mitsubishi Kasei Corporation Photoresist composition comprising a quinone diazide sulfonate of a novolac resin
US5372909A (en) * 1991-09-24 1994-12-13 Mitsubishi Kasei Corporation Photosensitive resin composition comprising an alkali-soluble resin made from a phenolic compound and at least 2 different aldehydes
US5302490A (en) * 1991-10-21 1994-04-12 Shipley Company Inc. Radiation sensitive compositions comprising blends of an aliphatic novolak resin and an aromatic novolak resin
JPH06204162A (ja) * 1992-12-28 1994-07-22 Mitsubishi Electric Corp 半導体装置の製造方法および該方法に用いられるレジスト組成物
JP3010963B2 (ja) * 1993-02-17 2000-02-21 信越化学工業株式会社 レジスト組成物
US5314782A (en) * 1993-03-05 1994-05-24 Morton International, Inc. Deep UV sensitive resistant to latent image decay comprising a diazonaphthoquinone sulfonate of a nitrobenzyl derivative
US6759384B1 (en) 1994-04-26 2004-07-06 Aventis Pharmaceuticals Inc. Factor Xa inhibitors
US5529880A (en) * 1995-03-29 1996-06-25 Shipley Company, L.L.C. Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound
IT1275432B (it) * 1995-05-19 1997-08-07 Plurimetal Srl Composizioni fotosensibili per stampa offset ad acidita' controllata
WO1997034197A1 (en) * 1996-03-11 1997-09-18 Hoechst Celanese Corporation Resin compositions for photoresist applications
CN1303121C (zh) * 2002-12-31 2007-03-07 本溪市轻化工研究所 感光印刷版和光刻胶用的合成树脂
JP6702251B2 (ja) * 2017-04-17 2020-05-27 信越化学工業株式会社 ポジ型レジストフィルム積層体及びパターン形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3635709A (en) * 1966-12-15 1972-01-18 Polychrome Corp Light-sensitive lithographic plate
US3647443A (en) * 1969-09-12 1972-03-07 Eastman Kodak Co Light-sensitive quinone diazide polymers and polymer compositions
US4123279A (en) * 1974-03-25 1978-10-31 Fuji Photo Film Co., Ltd. Light-sensitive o-quinonediazide containing planographic printing plate
DE3009873A1 (de) * 1979-03-16 1980-09-25 Daicel Chem Photoempfindliche masse
JPS561045A (en) * 1979-06-16 1981-01-08 Konishiroku Photo Ind Co Ltd Photosensitive composition
JPS561044A (en) * 1979-06-16 1981-01-08 Konishiroku Photo Ind Co Ltd Photosensitive composition

Also Published As

Publication number Publication date
EP0054258B1 (de) 1986-03-05
EP0054258A3 (en) 1983-04-27
EP0054258A2 (de) 1982-06-23
US4477553A (en) 1984-10-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee