DE3172609D1 - Coating infra red transparent semiconductor material - Google Patents
Coating infra red transparent semiconductor materialInfo
- Publication number
- DE3172609D1 DE3172609D1 DE8181303328T DE3172609T DE3172609D1 DE 3172609 D1 DE3172609 D1 DE 3172609D1 DE 8181303328 T DE8181303328 T DE 8181303328T DE 3172609 T DE3172609 T DE 3172609T DE 3172609 D1 DE3172609 D1 DE 3172609D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor material
- infra red
- transparent semiconductor
- red transparent
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- G02B1/105—
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/111—Anti-reflection coatings using layers comprising organic materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8027279 | 1980-08-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3172609D1 true DE3172609D1 (en) | 1985-11-14 |
Family
ID=10515601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8181303328T Expired DE3172609D1 (en) | 1980-08-21 | 1981-07-21 | Coating infra red transparent semiconductor material |
Country Status (4)
Country | Link |
---|---|
US (1) | US4412903A (de) |
EP (1) | EP0048542B2 (de) |
JP (1) | JPS57111220A (de) |
DE (1) | DE3172609D1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2514743B1 (fr) * | 1981-10-21 | 1986-05-09 | Rca Corp | Pellicule amorphe a base de carbone, du type diamant, et son procede de fabrication |
JPS6055480B2 (ja) * | 1982-08-23 | 1985-12-05 | 住友電気工業株式会社 | ダイヤモンドの気相合成法 |
EP0106637B1 (de) * | 1982-10-12 | 1988-02-17 | National Research Development Corporation | Für Infrarotstrahlung transparente optische Komponenten |
US4704339A (en) * | 1982-10-12 | 1987-11-03 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Infra-red transparent optical components |
DE3316693A1 (de) * | 1983-05-06 | 1984-11-08 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren zum herstellen von amorphen kohlenstoffschichten auf substraten und durch das verfahren beschichtete substrate |
US4524106A (en) * | 1983-06-23 | 1985-06-18 | Energy Conversion Devices, Inc. | Decorative carbon coating and method |
DE3335623A1 (de) * | 1983-09-30 | 1985-04-11 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer kohlenstoff enthaltenden schicht, kohlenstoff enthaltende schicht, verwendung einer kohlenstoff enthaltenden schicht und vorrichtung zur durchfuehrung eines verfahrens zur herstellung einer kohlenstoff enthaltenden schicht |
CA1232228A (en) * | 1984-03-13 | 1988-02-02 | Tatsuro Miyasato | Coating film and method and apparatus for producing the same |
JPS60204695A (ja) * | 1984-03-28 | 1985-10-16 | Mitsubishi Metal Corp | 人工ダイヤモンド皮膜の析出形成方法 |
GB2291888B (en) * | 1984-06-08 | 1996-06-26 | Barr & Stroud Ltd | Optical coating |
US4579609A (en) * | 1984-06-08 | 1986-04-01 | Massachusetts Institute Of Technology | Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition |
US4490229A (en) * | 1984-07-09 | 1984-12-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Deposition of diamondlike carbon films |
US4770940A (en) * | 1984-09-10 | 1988-09-13 | Ovonic Synthetic Materials Company | Glow discharge method of applying a carbon coating onto a substrate and coating applied thereby |
EP0221531A3 (de) * | 1985-11-06 | 1992-02-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Isoliertes gut wärmeleitendes Substrat und sein Herstellungsverfahren |
JPS63145776A (ja) * | 1987-09-12 | 1988-06-17 | Semiconductor Energy Lab Co Ltd | 被膜作成方法 |
JPS6379972A (ja) * | 1987-09-12 | 1988-04-09 | Semiconductor Energy Lab Co Ltd | 炭素被膜 |
JPH01103310A (ja) * | 1987-10-16 | 1989-04-20 | Sumitomo Electric Ind Ltd | 表面弾性波素子 |
GB9018608D0 (en) * | 1989-08-30 | 2013-11-13 | Texas Instruments Inc | Durable wideband anti-reflection coating for infrared windows |
US5638136A (en) * | 1992-01-13 | 1997-06-10 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for detecting flesh tones in an image |
JPH08241858A (ja) * | 1995-01-25 | 1996-09-17 | Toshiba Corp | 半導体の反射防止膜及びこの反射防止膜を用いた半導体の製造方法 |
US6066399A (en) * | 1997-03-19 | 2000-05-23 | Sanyo Electric Co., Ltd. | Hard carbon thin film and method of forming the same |
WO1999009587A2 (en) | 1997-08-13 | 1999-02-25 | Applied Materials, Inc. | Method of etching copper for semiconductor devices |
US6410101B1 (en) * | 2000-02-16 | 2002-06-25 | Motorola, Inc. | Method for scrubbing and passivating a surface of a field emission display |
FR3116152A1 (fr) * | 2020-11-06 | 2022-05-13 | Lynred | Fenetre optique en germanium, detecteur infrarouge et procede de realisation associes |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU411037A1 (ru) * | 1971-10-28 | 1974-08-05 | В. М. Гол ЯНОВ , А. П. Демидов | Способ получения искусственных алмазов |
US3854979A (en) * | 1972-06-29 | 1974-12-17 | Aerospace Corp | Process for applying glassy carbon coatings |
JPS5123476B2 (de) * | 1973-04-12 | 1976-07-16 | ||
US4060660A (en) * | 1976-01-15 | 1977-11-29 | Rca Corporation | Deposition of transparent amorphous carbon films |
CH611341A5 (de) * | 1976-09-09 | 1979-05-31 | Balzers Hochvakuum |
-
1981
- 1981-07-21 DE DE8181303328T patent/DE3172609D1/de not_active Expired
- 1981-07-21 EP EP81303328A patent/EP0048542B2/de not_active Expired - Lifetime
- 1981-08-14 US US06/292,433 patent/US4412903A/en not_active Expired - Lifetime
- 1981-08-21 JP JP56130355A patent/JPS57111220A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0319164B2 (de) | 1991-03-14 |
EP0048542B2 (de) | 1993-03-31 |
EP0048542A2 (de) | 1982-03-31 |
EP0048542B1 (de) | 1985-10-09 |
JPS57111220A (en) | 1982-07-10 |
EP0048542A3 (en) | 1982-04-28 |
US4412903A (en) | 1983-11-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8366 | Restricted maintained after opposition proceedings | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: BRITISH TECHNOLOGY GROUP LTD., LONDON, GB |
|
8328 | Change in the person/name/address of the agent |
Free format text: GALLO, W., DIPL.-ING. (FH), 86152 AUGSBURG SCHROETER, H., DIPL.-PHYS. FLEUCHAUS, L., DIPL.-ING. LEHMANN, K., DIPL.-ING., 81479 MUENCHEN WEHSER, W., DIPL.-ING., PAT.-ANWAELTE, 30161 HANNOVER |