DE3171974D1 - Low temperature annealing of semiconductor devices - Google Patents

Low temperature annealing of semiconductor devices

Info

Publication number
DE3171974D1
DE3171974D1 DE8181101689T DE3171974T DE3171974D1 DE 3171974 D1 DE3171974 D1 DE 3171974D1 DE 8181101689 T DE8181101689 T DE 8181101689T DE 3171974 T DE3171974 T DE 3171974T DE 3171974 D1 DE3171974 D1 DE 3171974D1
Authority
DE
Germany
Prior art keywords
low temperature
semiconductor devices
temperature annealing
annealing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181101689T
Other languages
English (en)
Inventor
Michael Robert Splinter
Richard Frederick Palys
Moiz Mulla Beguwala
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Application granted granted Critical
Publication of DE3171974D1 publication Critical patent/DE3171974D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE8181101689T 1980-03-14 1981-03-09 Low temperature annealing of semiconductor devices Expired DE3171974D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/130,509 US4303455A (en) 1980-03-14 1980-03-14 Low temperature microwave annealing of semiconductor devices

Publications (1)

Publication Number Publication Date
DE3171974D1 true DE3171974D1 (en) 1985-10-03

Family

ID=22445017

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181101689T Expired DE3171974D1 (en) 1980-03-14 1981-03-09 Low temperature annealing of semiconductor devices

Country Status (4)

Country Link
US (1) US4303455A (de)
EP (1) EP0036157B1 (de)
JP (1) JPS56144545A (de)
DE (1) DE3171974D1 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4372990A (en) * 1980-06-23 1983-02-08 Texas Instruments Incorporated Retaining wall technique to maintain physical shape of material during transient radiation annealing
GB2106709B (en) * 1981-09-17 1986-11-12 Itt Ind Ltd Semiconductor processing
FR2513659A1 (fr) * 1981-09-29 1983-04-01 Centre Nat Rech Scient Procede de recuit superficiel par energie micro-onde pulsee de materiaux semi-conducteurs
JPS5891621A (ja) * 1981-11-26 1983-05-31 Mitsubishi Electric Corp 半導体装置の製造方法
JPS58177469A (ja) * 1982-04-09 1983-10-18 Fujitsu Ltd 半導体基板の加熱方法及び加熱装置
JPH0669027B2 (ja) * 1983-02-21 1994-08-31 株式会社日立製作所 半導体ウエハの薄膜形成方法
GB2179496B (en) * 1985-08-23 1989-08-09 Marconi Electronic Devices A method of controlling a distribution of carrier lifetimes within a semiconductor material
FR2670950B1 (fr) * 1990-12-20 1993-04-16 Motorola Semiconducteurs Procede et appareil pour le traitement de recuit des dispositifs a semiconducteur.
US5519193A (en) * 1992-10-27 1996-05-21 International Business Machines Corporation Method and apparatus for stressing, burning in and reducing leakage current of electronic devices using microwave radiation
US6051483A (en) * 1996-11-12 2000-04-18 International Business Machines Corporation Formation of ultra-shallow semiconductor junction using microwave annealing
KR100297498B1 (ko) * 1996-11-20 2001-10-24 윤덕용 마이크로파를이용한다결정박막의제조방법
US6051283A (en) * 1998-01-13 2000-04-18 International Business Machines Corp. Microwave annealing
JPH11295383A (ja) * 1998-04-15 1999-10-29 Mitsubishi Electric Corp マイクロ波帯域用半導体トランジスタのバーンイン方法、バーンイン装置及びバーンインした半導体装置
TW449931B (en) 2000-01-27 2001-08-11 United Epitaxy Co Ltd Manufacturing method of P-type semiconductor with a low resistance coefficient
EP1130659A1 (de) * 2000-03-03 2001-09-05 United Epitaxy Company, Ltd. Verfahren zur Herstellung von p-Typ-Verbindungshalbleitermaterial mit niedrigem spezifischem Widerstand
TW541628B (en) * 2001-06-04 2003-07-11 Matsushita Electric Ind Co Ltd Annealing method and method and device for forming ultra-shallow junction layer
JP4090225B2 (ja) * 2001-08-29 2008-05-28 東京エレクトロン株式会社 半導体装置の製造方法、及び、基板処理方法
US7026229B2 (en) * 2001-11-28 2006-04-11 Vartan Semiconductor Equipment Associates, Inc. Athermal annealing with rapid thermal annealing system and method
US6884328B2 (en) * 2001-11-29 2005-04-26 Seagate Technology Llc Selective annealing of magnetic recording films
US20030186519A1 (en) * 2002-04-01 2003-10-02 Downey Daniel F. Dopant diffusion and activation control with athermal annealing
DE10229642B4 (de) * 2002-07-02 2007-03-22 Infineon Technologies Ag Verfahren zum lokalen Erhitzen eines in einem Halbleitersubstrat angeordneten vergrabenen Bereichs
US7176112B2 (en) * 2004-09-21 2007-02-13 Atmel Corporation Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material
US7985617B2 (en) 2008-09-11 2011-07-26 Micron Technology, Inc. Methods utilizing microwave radiation during formation of semiconductor constructions
TWI384556B (zh) * 2008-11-12 2013-02-01 Nat Applied Res Laboratoires Microwave activation annealing process
JP2011077065A (ja) * 2009-09-29 2011-04-14 Tokyo Electron Ltd 熱処理装置
US20130023111A1 (en) * 2011-06-29 2013-01-24 Purtell Robert J Low temperature methods and apparatus for microwave crystal regrowth
US20130023097A1 (en) * 2011-07-14 2013-01-24 Purtell Robert J U-mos trench profile optimization and etch damage removal using microwaves
US20140094023A1 (en) * 2012-09-28 2014-04-03 National Applied Research Laboratories Fabricating method of semiconductor chip
CN105390382A (zh) * 2015-10-22 2016-03-09 中国科学院微电子研究所 一种iii族氮化物电子器件低温欧姆接触的制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3777099A (en) * 1968-02-09 1973-12-04 M Levinson Methods of heating an article in a microwave oven
JPS4825816A (de) * 1971-08-11 1973-04-04
JPS5823349B2 (ja) * 1975-08-11 1983-05-14 新日本製鐵株式会社 タイカブツノシヨウケツホウホウ
US4013485A (en) * 1976-04-29 1977-03-22 International Business Machines Corporation Process for eliminating undesirable charge centers in MIS devices
FR2371226A1 (fr) * 1976-11-17 1978-06-16 Olivier Jean Applicateur pour soumettre une matiere a des ondes
DE2705444A1 (de) * 1977-02-09 1978-08-10 Siemens Ag Verfahren zur lokal begrenzten erwaermung eines festkoerpers
IT1078456B (it) * 1977-06-03 1985-05-08 Vitali Gian Franco Perfezionamento nei procedimenti per la produzione di dispositivi a semiconduttore
US4240843A (en) * 1978-05-23 1980-12-23 Western Electric Company, Inc. Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing
US4181538A (en) * 1978-09-26 1980-01-01 The United States Of America As Represented By The United States Department Of Energy Method for making defect-free zone by laser-annealing of doped silicon

Also Published As

Publication number Publication date
EP0036157A1 (de) 1981-09-23
EP0036157B1 (de) 1985-08-28
JPS56144545A (en) 1981-11-10
US4303455A (en) 1981-12-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee