DE3171523D1 - Fabrication and use of a high aspect ratio, high resolution collimating mask for ion beam growth of semiconductor devices - Google Patents

Fabrication and use of a high aspect ratio, high resolution collimating mask for ion beam growth of semiconductor devices

Info

Publication number
DE3171523D1
DE3171523D1 DE8181100498T DE3171523T DE3171523D1 DE 3171523 D1 DE3171523 D1 DE 3171523D1 DE 8181100498 T DE8181100498 T DE 8181100498T DE 3171523 T DE3171523 T DE 3171523T DE 3171523 D1 DE3171523 D1 DE 3171523D1
Authority
DE
Germany
Prior art keywords
fabrication
aspect ratio
semiconductor devices
ion beam
high resolution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181100498T
Other languages
English (en)
Inventor
Praveen Chaudhari
Ned J Chou
Ralph Feder
Alan B Fowler
James A Vanvechten
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3171523D1 publication Critical patent/DE3171523D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/944—Shadow

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE8181100498T 1980-03-10 1981-01-23 Fabrication and use of a high aspect ratio, high resolution collimating mask for ion beam growth of semiconductor devices Expired DE3171523D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/128,710 US4293374A (en) 1980-03-10 1980-03-10 High aspect ratio, high resolution mask fabrication

Publications (1)

Publication Number Publication Date
DE3171523D1 true DE3171523D1 (en) 1985-09-05

Family

ID=22436599

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181100498T Expired DE3171523D1 (en) 1980-03-10 1981-01-23 Fabrication and use of a high aspect ratio, high resolution collimating mask for ion beam growth of semiconductor devices

Country Status (3)

Country Link
US (1) US4293374A (de)
EP (1) EP0044372B1 (de)
DE (1) DE3171523D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3020809A1 (de) * 1980-06-02 1981-12-10 M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München Verfahren zur herstellung eines elektronenstrahlaustrittsfensters
US4620898A (en) * 1985-09-13 1986-11-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Ion beam sputter etching
EP0238694B1 (de) * 1986-03-27 1992-01-29 Ibm Deutschland Gmbh Verfahren zur Herstellung identisch angeordneter Ausrichtmarkierungen auf gegenüberliegenden Seiten einer Halbleiterscheibe
US5186788A (en) * 1987-07-23 1993-02-16 Matsushita Electric Industrial Co., Ltd. Fine pattern forming method
CA2061119C (en) * 1991-04-19 1998-02-03 Pei-Ing P. Lee Method of depositing conductors in high aspect ratio apertures
JP2725944B2 (ja) * 1991-04-19 1998-03-11 インターナショナル・ビジネス・マシーンズ・コーポレイション 金属層堆積方法
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
DE10006523A1 (de) * 2000-02-15 2001-08-23 Infineon Technologies Ag Implantationsmaske für Hochenergieionenimplantation
JP3787630B2 (ja) * 2003-02-14 2006-06-21 独立行政法人情報通信研究機構 ナノギャップ電極の製造方法
US8957478B2 (en) * 2013-06-24 2015-02-17 International Business Machines Corporation Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303085A (en) * 1962-02-28 1967-02-07 Gen Electric Molecular sieves and methods for producing same
US3415993A (en) * 1966-11-07 1968-12-10 Gen Electric Radiation detection sheet material having metal coating to facilitate read-out
US3520741A (en) * 1967-12-18 1970-07-14 Hughes Aircraft Co Method of simultaneous epitaxial growth and ion implantation
GB1305777A (de) * 1969-05-05 1973-02-07
US3852134A (en) * 1969-05-05 1974-12-03 Gen Electric Method for forming selectively perforate bodies
US4013502A (en) * 1973-06-18 1977-03-22 Texas Instruments Incorporated Stencil process for high resolution pattern replication
US4022927A (en) * 1975-06-30 1977-05-10 International Business Machines Corporation Methods for forming thick self-supporting masks
US4021276A (en) * 1975-12-29 1977-05-03 Western Electric Company, Inc. Method of making rib-structure shadow mask for ion implantation

Also Published As

Publication number Publication date
EP0044372A3 (en) 1982-03-31
EP0044372B1 (de) 1985-07-31
US4293374A (en) 1981-10-06
EP0044372A2 (de) 1982-01-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee