DE3167792D1 - Light sensitive screen and devices including the same - Google Patents

Light sensitive screen and devices including the same

Info

Publication number
DE3167792D1
DE3167792D1 DE8181301819T DE3167792T DE3167792D1 DE 3167792 D1 DE3167792 D1 DE 3167792D1 DE 8181301819 T DE8181301819 T DE 8181301819T DE 3167792 T DE3167792 T DE 3167792T DE 3167792 D1 DE3167792 D1 DE 3167792D1
Authority
DE
Germany
Prior art keywords
same
devices including
light sensitive
sensitive screen
screen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181301819T
Other languages
German (de)
English (en)
Inventor
Sachio Ishioka
Yoshinori Imamura
Yasuharu Shimomoto
Saburo Ataka
Yasuo Tanaka
Eiichi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3167792D1 publication Critical patent/DE3167792D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE8181301819T 1980-04-25 1981-04-24 Light sensitive screen and devices including the same Expired DE3167792D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5415580A JPS56152280A (en) 1980-04-25 1980-04-25 Light receiving surface

Publications (1)

Publication Number Publication Date
DE3167792D1 true DE3167792D1 (en) 1985-01-31

Family

ID=12962650

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181301819T Expired DE3167792D1 (en) 1980-04-25 1981-04-24 Light sensitive screen and devices including the same

Country Status (5)

Country Link
US (1) US4419604A (enExample)
EP (1) EP0039219B1 (enExample)
JP (1) JPS56152280A (enExample)
CA (1) CA1191638A (enExample)
DE (1) DE3167792D1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5685876A (en) * 1979-12-14 1981-07-13 Hitachi Ltd Photoelectric converter
GB2088628B (en) * 1980-10-03 1985-06-12 Canon Kk Photoconductive member
JPS58194231A (ja) * 1982-05-10 1983-11-12 Hitachi Ltd 撮像管
JPS5934675A (ja) * 1982-08-23 1984-02-25 Hitachi Ltd 受光素子
JPS59108457A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像素子
JPS61222383A (ja) * 1985-03-28 1986-10-02 Shizuoka Univ 非晶質半導体撮像装置
EP0215289B1 (de) * 1985-08-23 1991-10-09 Siemens Aktiengesellschaft Verfahren zur Herstellung einer hochsperrenden Diodenanordnung auf der Basis von a-Si:H für Bildsensorzeilen
JPS62122268A (ja) * 1985-11-22 1987-06-03 Fuji Photo Film Co Ltd 固体撮像素子
JPH07101598B2 (ja) * 1986-06-27 1995-11-01 株式会社日立製作所 撮像管
US5233265A (en) * 1986-07-04 1993-08-03 Hitachi, Ltd. Photoconductive imaging apparatus
EP0283699B1 (en) * 1987-03-23 1994-06-15 Hitachi, Ltd. Photoelectric conversion device
JP2686266B2 (ja) * 1988-01-28 1997-12-08 株式会社日立製作所 受光素子の製造方法
JPH02109890A (ja) * 1988-10-14 1990-04-23 Nkk Corp ジャケット付き容器
DE4027236B4 (de) * 1989-08-31 2005-03-31 Sanyo Electric Co., Ltd., Moriguchi Verfahren zur Herstellung von Filmen aus amorphem Silicium und einen solchen Film verwendende Photohalbleiter-Vorrichtung
JPH03139885A (ja) * 1989-10-25 1991-06-14 Mitsubishi Electric Corp 固体撮像装置
JP5070031B2 (ja) * 2007-12-25 2012-11-07 富士フイルム株式会社 放射線画像検出器
JP2009182095A (ja) * 2008-01-30 2009-08-13 Fujifilm Corp 光電変換素子及び固体撮像素子

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1166982A (en) * 1967-05-08 1969-10-15 Westinghouse Electric Corp Radiation Sensitive Pickup Device
GB1349351A (en) 1970-06-24 1974-04-03 Emi Ltd Electron discharge devices having charge storage targets
US3890524A (en) * 1972-06-27 1975-06-17 Hitachi Ltd Photo-conductive target comprising both solid and porous layers
JPS5052927A (enExample) 1973-09-10 1975-05-10
NL7415988A (nl) 1973-12-10 1975-06-12 Rca Corp Fotogeleidende afbeeldinrichting.
US4128844A (en) * 1974-08-01 1978-12-05 Robert Bosch Gmbh Camera tube target structure exhibiting greater-than-unity amplification
US4147667A (en) * 1978-01-13 1979-04-03 International Business Machines Corporation Photoconductor for GaAs laser addressed devices
JPS54150995A (en) * 1978-05-19 1979-11-27 Hitachi Ltd Photo detector
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
JPS5554155A (en) * 1978-10-09 1980-04-21 Toyota Motor Corp Working feeder for machine tool

Also Published As

Publication number Publication date
JPS56152280A (en) 1981-11-25
EP0039219A1 (en) 1981-11-04
EP0039219B1 (en) 1984-12-19
US4419604A (en) 1983-12-06
JPS6349394B2 (enExample) 1988-10-04
CA1191638A (en) 1985-08-06

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