DE3166664D1 - Stabilized magnetically sensitive avalanche transistor - Google Patents

Stabilized magnetically sensitive avalanche transistor

Info

Publication number
DE3166664D1
DE3166664D1 DE8181101632T DE3166664T DE3166664D1 DE 3166664 D1 DE3166664 D1 DE 3166664D1 DE 8181101632 T DE8181101632 T DE 8181101632T DE 3166664 T DE3166664 T DE 3166664T DE 3166664 D1 DE3166664 D1 DE 3166664D1
Authority
DE
Germany
Prior art keywords
magnetically sensitive
avalanche transistor
sensitive avalanche
stabilized
stabilized magnetically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181101632T
Other languages
English (en)
Inventor
Albert Watson Vinal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3166664D1 publication Critical patent/DE3166664D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
DE8181101632T 1980-05-01 1981-03-06 Stabilized magnetically sensitive avalanche transistor Expired DE3166664D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/145,408 US4288708A (en) 1980-05-01 1980-05-01 Differentially modulated avalanche area magnetically sensitive transistor

Publications (1)

Publication Number Publication Date
DE3166664D1 true DE3166664D1 (en) 1984-11-22

Family

ID=22512975

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181101632T Expired DE3166664D1 (en) 1980-05-01 1981-03-06 Stabilized magnetically sensitive avalanche transistor

Country Status (5)

Country Link
US (1) US4288708A (de)
EP (1) EP0039392B1 (de)
JP (1) JPS56169362A (de)
CA (1) CA1153826A (de)
DE (1) DE3166664D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH658916A5 (de) * 1982-09-13 1986-12-15 Landis & Gyr Ag Magnetfeldsensor.
JPS59222969A (ja) * 1983-05-27 1984-12-14 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 磁気感応トランジスタ
US4851893A (en) * 1987-11-19 1989-07-25 Exar Corporation Programmable active/passive cell structure
FR2640813A1 (fr) * 1988-12-16 1990-06-22 Radiotechnique Compelec Circuit integre presentant un transistor vertical
US4939563A (en) * 1989-08-18 1990-07-03 Ibm Corporation Double carrier deflection high sensitivity magnetic sensor
JP3667676B2 (ja) * 2001-10-11 2005-07-06 株式会社東芝 半導体装置、半導体装置の製造方法及び半導体装置の電気特性評価システム
JP4543142B2 (ja) * 2002-03-01 2010-09-15 独立行政法人産業技術総合研究所 電子雪崩効果による抵抗変化を磁場によって制御した素子及びそれを用いた磁気感応装置
US7964924B2 (en) 2002-05-24 2011-06-21 National Institute Of Advanced Industrial Science And Technology Magnetoresistance effect device and magnetism sensor using the same
EP3194991A1 (de) * 2014-09-05 2017-07-26 Fondazione Bruno Kessler Verbesserter hall-effekt-magnetsensor und matrix mit mehreren solcher hall-effekt-magnetsensoren

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3714523A (en) * 1971-03-30 1973-01-30 Texas Instruments Inc Magnetic field sensor
US3714559A (en) * 1971-08-10 1973-01-30 Texas Instruments Inc Method of measuring magnetic fields utilizing a three dram igfet with particular bias
US3829883A (en) * 1972-08-31 1974-08-13 R Bate Magnetic field detector employing plural drain igfet
US4129880A (en) * 1977-07-01 1978-12-12 International Business Machines Incorporated Channel depletion boundary modulation magnetic field sensor
US4276555A (en) * 1978-07-13 1981-06-30 International Business Machines Corporation Controlled avalanche voltage transistor and magnetic sensor

Also Published As

Publication number Publication date
EP0039392A1 (de) 1981-11-11
JPS56169362A (en) 1981-12-26
JPH0126182B2 (de) 1989-05-22
EP0039392B1 (de) 1984-10-17
US4288708A (en) 1981-09-08
CA1153826A (en) 1983-09-13

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee