DE3134189A1 - Bilderzeugungselement fuer elektrophotographische zwecke - Google Patents
Bilderzeugungselement fuer elektrophotographische zweckeInfo
- Publication number
- DE3134189A1 DE3134189A1 DE19813134189 DE3134189A DE3134189A1 DE 3134189 A1 DE3134189 A1 DE 3134189A1 DE 19813134189 DE19813134189 DE 19813134189 DE 3134189 A DE3134189 A DE 3134189A DE 3134189 A1 DE3134189 A1 DE 3134189A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- atoms
- amorphous layer
- amorphous
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55120270A JPS5744154A (en) | 1980-08-29 | 1980-08-29 | Electrophotographic image formation member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3134189A1 true DE3134189A1 (de) | 1982-04-22 |
| DE3134189C2 DE3134189C2 (enFirst) | 1987-08-20 |
Family
ID=14782059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813134189 Granted DE3134189A1 (de) | 1980-08-29 | 1981-08-28 | Bilderzeugungselement fuer elektrophotographische zwecke |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4420546A (enFirst) |
| JP (1) | JPS5744154A (enFirst) |
| DE (1) | DE3134189A1 (enFirst) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0066812A3 (en) * | 1981-05-29 | 1983-10-12 | Kabushiki Kaisha Toshiba | Electrophotographic photosensitive member |
| EP0176936A1 (en) * | 1984-09-27 | 1986-04-09 | Kabushiki Kaisha Toshiba | Electrophotographic photosensitive member |
| DE3616608A1 (de) * | 1985-05-17 | 1986-11-20 | Ricoh Co., Ltd., Tokio/Tokyo | Lichtempfindliches material fuer elektrophotographie |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59193463A (ja) * | 1983-04-18 | 1984-11-02 | Canon Inc | 電子写真用光導電部材 |
| US4582773A (en) * | 1985-05-02 | 1986-04-15 | Energy Conversion Devices, Inc. | Electrophotographic photoreceptor and method for the fabrication thereof |
| US4713308A (en) * | 1985-06-25 | 1987-12-15 | Kabushiki Kaisha Toshiba | Electrophotographic photosensitive member using microcrystalline silicon |
| JPS61295577A (ja) * | 1985-06-25 | 1986-12-26 | Toshiba Corp | 光導電性部材 |
| JPS61295576A (ja) * | 1985-06-25 | 1986-12-26 | Toshiba Corp | 光導電性部材 |
| US4717637A (en) * | 1985-06-25 | 1988-01-05 | Kabushiki Kaisha Toshiba | Electrophotographic photosensitive member using microcrystalline silicon |
| JPS62205361A (ja) * | 1986-03-05 | 1987-09-09 | Canon Inc | 電子写真用光受容部材及びその製造方法 |
| JPS62223762A (ja) * | 1986-03-25 | 1987-10-01 | Canon Inc | 電子写真用光受容部材及びその製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2855718A1 (de) * | 1977-12-22 | 1979-06-28 | Canon Kk | Lichtempfindliches element fuer die elektrophotographie und verfahren zu dessen herstellung |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
| US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
| US4237151A (en) * | 1979-06-26 | 1980-12-02 | The United States Of America As Represented By The United States Department Of Energy | Thermal decomposition of silane to form hydrogenated amorphous Si film |
| US4253882A (en) * | 1980-02-15 | 1981-03-03 | University Of Delaware | Multiple gap photovoltaic device |
| JPS56146142A (en) * | 1980-04-16 | 1981-11-13 | Hitachi Ltd | Electrophotographic sensitive film |
-
1980
- 1980-08-29 JP JP55120270A patent/JPS5744154A/ja active Granted
-
1981
- 1981-08-20 US US06/294,434 patent/US4420546A/en not_active Expired - Lifetime
- 1981-08-28 DE DE19813134189 patent/DE3134189A1/de active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2855718A1 (de) * | 1977-12-22 | 1979-06-28 | Canon Kk | Lichtempfindliches element fuer die elektrophotographie und verfahren zu dessen herstellung |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0066812A3 (en) * | 1981-05-29 | 1983-10-12 | Kabushiki Kaisha Toshiba | Electrophotographic photosensitive member |
| US4560634A (en) * | 1981-05-29 | 1985-12-24 | Tokyo Shibaura Denki Kabushiki Kaisha | Electrophotographic photosensitive member using microcrystalline silicon |
| EP0176936A1 (en) * | 1984-09-27 | 1986-04-09 | Kabushiki Kaisha Toshiba | Electrophotographic photosensitive member |
| US4769303A (en) * | 1984-09-27 | 1988-09-06 | Kabushiki Kaisha Toshiba | Electrophotographic photosensitive member |
| DE3616608A1 (de) * | 1985-05-17 | 1986-11-20 | Ricoh Co., Ltd., Tokio/Tokyo | Lichtempfindliches material fuer elektrophotographie |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5744154A (en) | 1982-03-12 |
| US4420546A (en) | 1983-12-13 |
| DE3134189C2 (enFirst) | 1987-08-20 |
| JPS6239735B2 (enFirst) | 1987-08-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8380 | Miscellaneous part iii |
Free format text: SEITE 2, ZEILE 25 "0,01" AENDERN IN "0,1" SEITE 5, ZEILE 36 "0,1 BIS 40" AENDERN IN "0,1 BIS 50" |
|
| 8364 | No opposition during term of opposition |