DE3071878D1 - Fine-line solid state device - Google Patents

Fine-line solid state device

Info

Publication number
DE3071878D1
DE3071878D1 DE8181900097T DE3071878T DE3071878D1 DE 3071878 D1 DE3071878 D1 DE 3071878D1 DE 8181900097 T DE8181900097 T DE 8181900097T DE 3071878 T DE3071878 T DE 3071878T DE 3071878 D1 DE3071878 D1 DE 3071878D1
Authority
DE
Germany
Prior art keywords
fine
solid state
state device
line solid
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8181900097T
Other languages
German (de)
English (en)
Inventor
Tan Tsu Sheng
Ashok Kumar Sinha
Sheila Vaidya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of DE3071878D1 publication Critical patent/DE3071878D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
DE8181900097T 1979-11-30 1980-10-20 Fine-line solid state device Expired DE3071878D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9897979A 1979-11-30 1979-11-30
PCT/US1980/001384 WO1981001629A1 (en) 1979-11-30 1980-10-20 Fine-line solid state device

Publications (1)

Publication Number Publication Date
DE3071878D1 true DE3071878D1 (en) 1987-02-05

Family

ID=22271822

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8181900097T Expired DE3071878D1 (en) 1979-11-30 1980-10-20 Fine-line solid state device

Country Status (6)

Country Link
EP (1) EP0040629B1 (enExample)
JP (1) JPS57500669A (enExample)
CA (1) CA1149082A (enExample)
DE (1) DE3071878D1 (enExample)
GB (1) GB2064864B (enExample)
WO (1) WO1981001629A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4923526A (en) * 1985-02-20 1990-05-08 Mitsubishi Denki Kabushiki Kaisha Homogeneous fine grained metal film on substrate and manufacturing method thereof
EP0223698A3 (en) * 1985-11-14 1987-11-19 Thomson Components-Mostek Corporation Hillock immunization mask
JP2680468B2 (ja) * 1989-07-01 1997-11-19 株式会社東芝 半導体装置および半導体装置の製造方法
US4976809A (en) * 1989-12-18 1990-12-11 North American Philips Corp, Signetics Division Method of forming an aluminum conductor with highly oriented grain structure
US5709958A (en) * 1992-08-27 1998-01-20 Kabushiki Kaisha Toshiba Electronic parts
EP0594286B1 (en) * 1992-08-27 1998-11-25 Kabushiki Kaisha Toshiba Electronic parts with metal wiring and manufacturing method thereof
US6001461A (en) * 1992-08-27 1999-12-14 Kabushiki Kaisha Toshiba Electronic parts and manufacturing method thereof
US5488013A (en) * 1993-12-20 1996-01-30 International Business Machines Corporation Method of forming transverse diffusion barrier interconnect structure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3879840A (en) * 1969-01-15 1975-04-29 Ibm Copper doped aluminum conductive stripes and method therefor
US3833842A (en) * 1970-03-09 1974-09-03 Texas Instruments Inc Modified tungsten metallization for semiconductor devices
US3754168A (en) * 1970-03-09 1973-08-21 Texas Instruments Inc Metal contact and interconnection system for nonhermetic enclosed semiconductor devices
US3830657A (en) * 1971-06-30 1974-08-20 Ibm Method for making integrated circuit contact structure
US3743894A (en) * 1972-06-01 1973-07-03 Motorola Inc Electromigration resistant semiconductor contacts and the method of producing same
DE2419157C3 (de) * 1974-04-20 1979-06-28 W.C. Heraeus Gmbh, 6450 Hanau Metallischer Träger für Halbleiterbauelemente und Verfahren zu seiner Herstellung
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance
US4062720A (en) * 1976-08-23 1977-12-13 International Business Machines Corporation Process for forming a ledge-free aluminum-copper-silicon conductor structure
US4166279A (en) * 1977-12-30 1979-08-28 International Business Machines Corporation Electromigration resistance in gold thin film conductors

Also Published As

Publication number Publication date
JPS57500669A (enExample) 1982-04-15
WO1981001629A1 (en) 1981-06-11
EP0040629A1 (en) 1981-12-02
EP0040629B1 (en) 1986-12-30
CA1149082A (en) 1983-06-28
EP0040629A4 (en) 1984-04-27
GB2064864B (en) 1984-05-23
GB2064864A (en) 1981-06-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee