JPS57500669A - - Google Patents
Info
- Publication number
- JPS57500669A JPS57500669A JP50030181A JP50030181A JPS57500669A JP S57500669 A JPS57500669 A JP S57500669A JP 50030181 A JP50030181 A JP 50030181A JP 50030181 A JP50030181 A JP 50030181A JP S57500669 A JPS57500669 A JP S57500669A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9897979A | 1979-11-30 | 1979-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57500669A true JPS57500669A (ja) | 1982-04-15 |
Family
ID=22271822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50030181A Pending JPS57500669A (ja) | 1979-11-30 | 1980-10-20 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0040629B1 (ja) |
| JP (1) | JPS57500669A (ja) |
| CA (1) | CA1149082A (ja) |
| DE (1) | DE3071878D1 (ja) |
| GB (1) | GB2064864B (ja) |
| WO (1) | WO1981001629A1 (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4923526A (en) * | 1985-02-20 | 1990-05-08 | Mitsubishi Denki Kabushiki Kaisha | Homogeneous fine grained metal film on substrate and manufacturing method thereof |
| EP0223698A3 (en) * | 1985-11-14 | 1987-11-19 | Thomson Components-Mostek Corporation | Hillock immunization mask |
| JP2680468B2 (ja) * | 1989-07-01 | 1997-11-19 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| US4976809A (en) * | 1989-12-18 | 1990-12-11 | North American Philips Corp, Signetics Division | Method of forming an aluminum conductor with highly oriented grain structure |
| EP0725439B1 (en) * | 1992-08-27 | 2006-01-18 | Kabushiki Kaisha Toshiba | Electronic parts with metal wiring and manufacturing method thereof |
| US5709958A (en) * | 1992-08-27 | 1998-01-20 | Kabushiki Kaisha Toshiba | Electronic parts |
| US6001461A (en) * | 1992-08-27 | 1999-12-14 | Kabushiki Kaisha Toshiba | Electronic parts and manufacturing method thereof |
| US5488013A (en) * | 1993-12-20 | 1996-01-30 | International Business Machines Corporation | Method of forming transverse diffusion barrier interconnect structure |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3879840A (en) * | 1969-01-15 | 1975-04-29 | Ibm | Copper doped aluminum conductive stripes and method therefor |
| US3754168A (en) * | 1970-03-09 | 1973-08-21 | Texas Instruments Inc | Metal contact and interconnection system for nonhermetic enclosed semiconductor devices |
| US3833842A (en) * | 1970-03-09 | 1974-09-03 | Texas Instruments Inc | Modified tungsten metallization for semiconductor devices |
| US3830657A (en) * | 1971-06-30 | 1974-08-20 | Ibm | Method for making integrated circuit contact structure |
| US3743894A (en) * | 1972-06-01 | 1973-07-03 | Motorola Inc | Electromigration resistant semiconductor contacts and the method of producing same |
| DE2419157C3 (de) * | 1974-04-20 | 1979-06-28 | W.C. Heraeus Gmbh, 6450 Hanau | Metallischer Träger für Halbleiterbauelemente und Verfahren zu seiner Herstellung |
| US4017890A (en) * | 1975-10-24 | 1977-04-12 | International Business Machines Corporation | Intermetallic compound layer in thin films for improved electromigration resistance |
| US4062720A (en) * | 1976-08-23 | 1977-12-13 | International Business Machines Corporation | Process for forming a ledge-free aluminum-copper-silicon conductor structure |
| US4166279A (en) * | 1977-12-30 | 1979-08-28 | International Business Machines Corporation | Electromigration resistance in gold thin film conductors |
-
1980
- 1980-10-20 WO PCT/US1980/001384 patent/WO1981001629A1/en active IP Right Grant
- 1980-10-20 EP EP81900097A patent/EP0040629B1/en not_active Expired
- 1980-10-20 DE DE8181900097T patent/DE3071878D1/de not_active Expired
- 1980-10-20 JP JP50030181A patent/JPS57500669A/ja active Pending
- 1980-10-22 CA CA000363015A patent/CA1149082A/en not_active Expired
- 1980-11-26 GB GB8037893A patent/GB2064864B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0040629B1 (en) | 1986-12-30 |
| EP0040629A4 (en) | 1984-04-27 |
| EP0040629A1 (en) | 1981-12-02 |
| WO1981001629A1 (en) | 1981-06-11 |
| CA1149082A (en) | 1983-06-28 |
| GB2064864A (en) | 1981-06-17 |
| GB2064864B (en) | 1984-05-23 |
| DE3071878D1 (en) | 1987-02-05 |