DE3066987D1 - Method of producing dynamic random-access memory cells - Google Patents

Method of producing dynamic random-access memory cells

Info

Publication number
DE3066987D1
DE3066987D1 DE8080302965T DE3066987T DE3066987D1 DE 3066987 D1 DE3066987 D1 DE 3066987D1 DE 8080302965 T DE8080302965 T DE 8080302965T DE 3066987 T DE3066987 T DE 3066987T DE 3066987 D1 DE3066987 D1 DE 3066987D1
Authority
DE
Germany
Prior art keywords
access memory
memory cells
dynamic random
producing dynamic
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080302965T
Other languages
English (en)
Inventor
Motoo Nakano
Tsutomu Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3066987D1 publication Critical patent/DE3066987D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE8080302965T 1979-08-30 1980-08-27 Method of producing dynamic random-access memory cells Expired DE3066987D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54110718A JPS5826829B2 (ja) 1979-08-30 1979-08-30 ダイナミックメモリセルの製造方法

Publications (1)

Publication Number Publication Date
DE3066987D1 true DE3066987D1 (en) 1984-04-19

Family

ID=14542716

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080302965T Expired DE3066987D1 (en) 1979-08-30 1980-08-27 Method of producing dynamic random-access memory cells

Country Status (4)

Country Link
US (1) US4350536A (de)
EP (1) EP0024918B1 (de)
JP (1) JPS5826829B2 (de)
DE (1) DE3066987D1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4536941A (en) * 1980-03-21 1985-08-27 Kuo Chang Kiang Method of making high density dynamic memory cell
JPS571252A (en) * 1980-06-03 1982-01-06 Mitsubishi Electric Corp Semiconductor device
US4883543A (en) * 1980-06-05 1989-11-28 Texas Instruments Incroporated Shielding for implant in manufacture of dynamic memory
US4403394A (en) * 1980-12-17 1983-09-13 International Business Machines Corporation Formation of bit lines for ram device
JPS598536U (ja) * 1982-07-08 1984-01-20 三菱農機株式会社 脱穀機の安全装置
US4466177A (en) * 1983-06-30 1984-08-21 International Business Machines Corporation Storage capacitor optimization for one device FET dynamic RAM cell
JPS61156862A (ja) * 1984-12-28 1986-07-16 Toshiba Corp 半導体記憶装置
US4745454A (en) * 1985-01-07 1988-05-17 Advanced Micro Devices, Inc. High capacity semiconductor capacitance device structure
JPS62141757A (ja) * 1985-12-16 1987-06-25 Mitsubishi Electric Corp 半導体記憶装置の製造方法
US5268321A (en) * 1985-12-20 1993-12-07 Mitsubishi Denki Kabushiki Kaisha Method of making DRAM cell having improved radiation protection
US4679302A (en) * 1986-05-12 1987-07-14 Northern Telecom Limited Double polysilicon integrated circuit process
US4760034A (en) * 1987-06-15 1988-07-26 Motorola, Inc. Method of forming edge-sealed multi-layer structure while protecting adjacent region by screen oxide layer
KR900005871B1 (ko) * 1987-09-21 1990-08-13 삼성전자 주식회사 반도체 메모리소자의 제조방법
JP2721167B2 (ja) * 1988-01-28 1998-03-04 株式会社東芝 半導体記憶装置
US4871688A (en) * 1988-05-02 1989-10-03 Micron Technology, Inc. Sequence of etching polysilicon in semiconductor memory devices
JP2503621B2 (ja) * 1989-01-23 1996-06-05 日本電気株式会社 半導体装置の製造方法
US5162250A (en) * 1989-06-30 1992-11-10 Texas Instruments, Incorporated Method for interconnecting a filament channel transistor with a wordline conductor
US6437416B1 (en) * 1996-04-12 2002-08-20 Cree Microwave, Inc. Semiconductor structure having a planar junction termination with high breakdown voltage and low parasitic capacitance
US6133077A (en) 1998-01-13 2000-10-17 Lsi Logic Corporation Formation of high-voltage and low-voltage devices on a semiconductor substrate
US6093585A (en) * 1998-05-08 2000-07-25 Lsi Logic Corporation High voltage tolerant thin film transistor
JP2007067068A (ja) * 2005-08-30 2007-03-15 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753807A (en) * 1972-02-24 1973-08-21 Bell Canada Northern Electric Manufacture of bipolar semiconductor devices
US3832247A (en) * 1973-06-22 1974-08-27 Motorola Inc Process for manufacturing integrated circuits
DE2449688C3 (de) * 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
NL7513161A (nl) * 1975-11-11 1977-05-13 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting, en inrichting vervaardigd volgens de werkwijze.
US4164751A (en) * 1976-11-10 1979-08-14 Texas Instruments Incorporated High capacity dynamic ram cell
US4112575A (en) * 1976-12-20 1978-09-12 Texas Instruments Incorporated Fabrication methods for the high capacity ram cell
NL7703941A (nl) * 1977-04-12 1978-10-16 Philips Nv Werkwijze ter vervaardiging van een halfgelei- derinrichting en inrichting, vervaardigd door toepassing van de werkwijze.
US4190466A (en) * 1977-12-22 1980-02-26 International Business Machines Corporation Method for making a bipolar transistor structure utilizing self-passivating diffusion sources
US4282646A (en) * 1979-08-20 1981-08-11 International Business Machines Corporation Method of making a transistor array

Also Published As

Publication number Publication date
JPS5826829B2 (ja) 1983-06-06
EP0024918A3 (en) 1982-06-16
EP0024918B1 (de) 1984-03-14
US4350536A (en) 1982-09-21
JPS5635462A (en) 1981-04-08
EP0024918A2 (de) 1981-03-11

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee