DE3066749D1 - Use of a conductive organic charge transfer material as electron beam sensitive resist composition, and method of forming positive and negative resist images - Google Patents

Use of a conductive organic charge transfer material as electron beam sensitive resist composition, and method of forming positive and negative resist images

Info

Publication number
DE3066749D1
DE3066749D1 DE8080104214T DE3066749T DE3066749D1 DE 3066749 D1 DE3066749 D1 DE 3066749D1 DE 8080104214 T DE8080104214 T DE 8080104214T DE 3066749 T DE3066749 T DE 3066749T DE 3066749 D1 DE3066749 D1 DE 3066749D1
Authority
DE
Germany
Prior art keywords
electron beam
transfer material
charge transfer
conductive organic
organic charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080104214T
Other languages
German (de)
English (en)
Inventor
Edward Martin Engler
John Demosthenes Kuptsis
Robert Gerard Schad
Yaffa Tomkiewicz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3066749D1 publication Critical patent/DE3066749D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE8080104214T 1979-08-09 1980-07-18 Use of a conductive organic charge transfer material as electron beam sensitive resist composition, and method of forming positive and negative resist images Expired DE3066749D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6529179A 1979-08-09 1979-08-09

Publications (1)

Publication Number Publication Date
DE3066749D1 true DE3066749D1 (en) 1984-04-05

Family

ID=22061674

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080104214T Expired DE3066749D1 (en) 1979-08-09 1980-07-18 Use of a conductive organic charge transfer material as electron beam sensitive resist composition, and method of forming positive and negative resist images

Country Status (5)

Country Link
EP (1) EP0023988B1 (cg-RX-API-DMAC7.html)
JP (1) JPS5627139A (cg-RX-API-DMAC7.html)
CA (1) CA1165761A (cg-RX-API-DMAC7.html)
DE (1) DE3066749D1 (cg-RX-API-DMAC7.html)
IT (1) IT1149813B (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4522754A (en) * 1982-11-12 1985-06-11 Ciba Geigy Corporation Metallically conducting (2-fluoro-5,6,11,12-tetraselenotetracene)2 -bromide
US4601853A (en) * 1984-02-13 1986-07-22 Ciba-Geigy Corporation (2-fluoro-5,6,11,12-tetraselenotetracene)2 chloride
CH664963A5 (de) * 1985-10-18 1988-04-15 Ciba Geigy Ag Difluorierte (5,6,11,12-tetraselenotetracen)2-halogenide, verfahren zu deren herstellung und deren verwendung.
JPS6435545A (en) * 1987-07-31 1989-02-06 Japan Synthetic Rubber Co Ltd Resist composition used for processing with charged particle beam
JPH01210944A (ja) * 1988-02-18 1989-08-24 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
DE58909497D1 (de) * 1988-09-30 1995-12-21 Ciba Geigy Ag Antistatische und elektrisch leitende Reliefbilder, Verfahren zu deren Herstellung, Beschichtungsmittel und strahlungsempfindliche Polymere.
JP5458267B2 (ja) * 2009-02-24 2014-04-02 国立大学法人東京工業大学 ヘキサメチレンテトラチアフルバレン化合物、有機半導体および有機薄膜トランジスタ
CN113004291B (zh) * 2019-12-20 2022-03-01 中国科学院化学研究所 基于金属卟啉的分子玻璃化学放大光刻胶及其制备方法和应用

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925076A (en) * 1971-02-16 1975-12-09 Monsanto Co Light sensitive compositions and products
US4312991A (en) * 1979-05-10 1982-01-26 International Business Machines Corporation Dithiobenzoate 4,5-dicyano-1,3-(dithiolidene-2-yl)methylene

Also Published As

Publication number Publication date
EP0023988A2 (de) 1981-02-18
EP0023988A3 (en) 1982-01-20
IT1149813B (it) 1986-12-10
IT8023528A0 (it) 1980-07-18
JPS5627139A (en) 1981-03-16
CA1165761A (en) 1984-04-17
JPS6245969B2 (cg-RX-API-DMAC7.html) 1987-09-30
EP0023988B1 (de) 1984-02-29

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee