DE3065706D1 - Semiconductor annealing - Google Patents

Semiconductor annealing

Info

Publication number
DE3065706D1
DE3065706D1 DE8080303617T DE3065706T DE3065706D1 DE 3065706 D1 DE3065706 D1 DE 3065706D1 DE 8080303617 T DE8080303617 T DE 8080303617T DE 3065706 T DE3065706 T DE 3065706T DE 3065706 D1 DE3065706 D1 DE 3065706D1
Authority
DE
Germany
Prior art keywords
semiconductor annealing
annealing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080303617T
Other languages
English (en)
Inventor
John Michael Young
Peter Denis Scovell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB7936041A external-priority patent/GB2060998B/en
Priority claimed from GB8024758A external-priority patent/GB2081008B/en
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Application granted granted Critical
Publication of DE3065706D1 publication Critical patent/DE3065706D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/09—Laser anneal

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
DE8080303617T 1979-10-17 1980-10-14 Semiconductor annealing Expired DE3065706D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB7936041A GB2060998B (en) 1979-10-17 1979-10-17 Semiconductor annealing
GB8024758A GB2081008B (en) 1980-07-29 1980-07-29 Semiconductor annealing

Publications (1)

Publication Number Publication Date
DE3065706D1 true DE3065706D1 (en) 1983-12-29

Family

ID=26273246

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080303617T Expired DE3065706D1 (en) 1979-10-17 1980-10-14 Semiconductor annealing

Country Status (4)

Country Link
US (1) US4350537A (de)
EP (1) EP0027712B1 (de)
DE (1) DE3065706D1 (de)
IE (1) IE50301B1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486652A (en) * 1981-05-12 1984-12-04 Varian Associates, Inc. Blackbody radiation source with constant planar energy flux
US4433246A (en) * 1981-05-12 1984-02-21 Varian Associates, Inc. Blackbody radiation source for producing constant planar energy flux
US4421479A (en) * 1981-05-12 1983-12-20 Varian Associates, Inc. Process for treating a semiconductor material by blackbody radiation source with constant planar energy flux
FR2513659A1 (fr) * 1981-09-29 1983-04-01 Centre Nat Rech Scient Procede de recuit superficiel par energie micro-onde pulsee de materiaux semi-conducteurs
US4469529A (en) * 1981-12-04 1984-09-04 Ushio Denki Kabushiki Kaisha Method for heating semiconductor wafer by means of application of radiated light with supplemental circumferential heating
JPS58501927A (ja) * 1981-12-31 1983-11-10 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン シリコン・ウエハ中の酸素析出を減少させるための方法
GB2114809B (en) * 1982-02-04 1986-02-05 Standard Telephones Cables Ltd Metallic silicide production
US4436985A (en) * 1982-05-03 1984-03-13 Gca Corporation Apparatus for heat treating semiconductor wafers
US4481406A (en) * 1983-01-21 1984-11-06 Varian Associates, Inc. Heater assembly for thermal processing of a semiconductor wafer in a vacuum chamber
US4525221A (en) * 1984-05-16 1985-06-25 Rca Corporation Alloying of aluminum metallization
GB2160355B (en) * 1984-05-16 1988-01-13 Plessey Co Plc Annealing semiconductor devices
US4576652A (en) * 1984-07-12 1986-03-18 International Business Machines Corporation Incoherent light annealing of gallium arsenide substrate
US4751193A (en) * 1986-10-09 1988-06-14 Q-Dot, Inc. Method of making SOI recrystallized layers by short spatially uniform light pulses
US5514885A (en) * 1986-10-09 1996-05-07 Myrick; James J. SOI methods and apparatus
US4743569A (en) * 1987-04-20 1988-05-10 Texas Instruments Incorporated Two step rapid thermal anneal of implanted compound semiconductor
US5252498A (en) * 1989-08-28 1993-10-12 Semiconductor Energy Laboratory Co., Ltd. Method of forming electronic devices utilizing diamond
US7335570B1 (en) 1990-07-24 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulating films, capacitances, and semiconductor devices
DE69125323T2 (de) * 1990-07-24 1997-09-25 Semiconductor Energy Lab Verfahren zum Herstellen isolierender Filme, Kapazitäten und Halbleiteranordnungen
JPH04152518A (ja) * 1990-10-16 1992-05-26 Toshiba Corp 半導体装置の製造方法
DE4035842A1 (de) * 1990-11-10 1992-05-14 Telefunken Electronic Gmbh Verfahren zur rekristallisierung voramorphisierter halbleiteroberflaechenzonen
US5298749A (en) * 1992-09-29 1994-03-29 Semiconductor Energy Laboratory Co., Ltd. Infrared detector utilizing diamond film
US5429985A (en) * 1994-01-18 1995-07-04 Midwest Research Institute Fabrication of optically reflecting ohmic contacts for semiconductor devices
US5830277A (en) * 1995-05-26 1998-11-03 Mattson Technology, Inc. Thermal processing system with supplemental resistive heater and shielded optical pyrometry
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US5775416A (en) * 1995-11-17 1998-07-07 Cvc Products, Inc. Temperature controlled chuck for vacuum processing
US20040229443A1 (en) * 1998-12-31 2004-11-18 Bower Robert W. Structures, materials and methods for fabrication of nanostructures by transposed split of ion cut materials
DE10119947A1 (de) * 2001-04-24 2002-10-31 Crystal Growing Systems Gmbh Verfahren zum Steuern einer Kristallziehanlage und Kristallziehanlage zu seiner Durchführung
JP2008546203A (ja) * 2005-06-01 2008-12-18 マットソン テクノロジー インコーポレイテッド パルス化された加熱処理の間に熱収支を最適化する方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979272A (en) * 1974-07-18 1976-09-07 The United States Of America As Represented By The Secretary Of The Army Method of producing semiconductor devices with minority charge carriers having a long lifetime and devices produced thereby
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4047976A (en) * 1976-06-21 1977-09-13 Motorola, Inc. Method for manufacturing a high-speed semiconductor device
US4154625A (en) * 1977-11-16 1979-05-15 Bell Telephone Laboratories, Incorporated Annealing of uncapped compound semiconductor materials by pulsed energy deposition
US4323546A (en) * 1978-05-22 1982-04-06 Nuc Med Inc. Method and composition for cancer detection in humans
DE2837749A1 (de) * 1978-08-30 1980-03-13 Philips Patentverwaltung Verfahren zum herstellen von halbleiterbauelementen

Also Published As

Publication number Publication date
EP0027712A1 (de) 1981-04-29
IE802151L (en) 1981-04-17
IE50301B1 (en) 1986-03-19
EP0027712B1 (de) 1983-11-23
US4350537A (en) 1982-09-21

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee