DE3062304D1 - Forming irradiated regions in semiconductor bodies by nuclear radiation - Google Patents

Forming irradiated regions in semiconductor bodies by nuclear radiation

Info

Publication number
DE3062304D1
DE3062304D1 DE8080300037T DE3062304T DE3062304D1 DE 3062304 D1 DE3062304 D1 DE 3062304D1 DE 8080300037 T DE8080300037 T DE 8080300037T DE 3062304 T DE3062304 T DE 3062304T DE 3062304 D1 DE3062304 D1 DE 3062304D1
Authority
DE
Germany
Prior art keywords
nuclear radiation
semiconductor bodies
irradiated regions
forming irradiated
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080300037T
Other languages
German (de)
English (en)
Inventor
John Bartko
Earl Stauffer Schlegel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of DE3062304D1 publication Critical patent/DE3062304D1/de
Expired legal-status Critical Current

Links

Classifications

    • H10P34/40—
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/961—Ion beam source and generation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Thyristors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
DE8080300037T 1979-01-04 1980-01-04 Forming irradiated regions in semiconductor bodies by nuclear radiation Expired DE3062304D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/000,936 US4278475A (en) 1979-01-04 1979-01-04 Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation

Publications (1)

Publication Number Publication Date
DE3062304D1 true DE3062304D1 (en) 1983-04-21

Family

ID=21693640

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080300037T Expired DE3062304D1 (en) 1979-01-04 1980-01-04 Forming irradiated regions in semiconductor bodies by nuclear radiation

Country Status (7)

Country Link
US (1) US4278475A (enExample)
EP (1) EP0014516B1 (enExample)
JP (1) JPS596053B2 (enExample)
BR (1) BR7908587A (enExample)
CA (1) CA1135876A (enExample)
DE (1) DE3062304D1 (enExample)
IN (1) IN152428B (enExample)

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DE59209348D1 (de) * 1991-03-27 1998-07-02 Siemens Ag Verfahren zur Herstellung eines Thyristors mit einstellbarer Kippspannung
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AU669565B2 (en) * 1993-03-12 1996-06-13 Wahpeton Canvas Co., South Dakota, Inc. Swing away support system for a covering
US5858864A (en) * 1994-09-13 1999-01-12 Lsi Logic Corporation Process for making group IV semiconductor substrate treated with one or more group IV elements to form barrier region capable of inhibiting migration of dopant materials in substrate
US5654210A (en) * 1994-09-13 1997-08-05 Lsi Logic Corporation Process for making group IV semiconductor substrate treated with one or more group IV elements to form one or more barrier regions capable of inhibiting migration of dopant materials in substrate
DE19649800A1 (de) * 1996-12-02 1998-06-04 Asea Brown Boveri Verfahren zur Herstellung eines Abschaltthyristors mit einer anodenseitigen Stopschicht und einem transparenten Anodenemitter
DE10344592B4 (de) * 2003-09-25 2006-01-12 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Verfahren zum Einstellen der Durchbruchspannung eines Thyristors mit einer Durchbruchsstruktur
DE102004011234B4 (de) * 2004-03-04 2007-11-29 Infineon Technologies Ag Verfahren zur Verringerung der Zündempfindlichkeit eines Thyristors
US20100289121A1 (en) * 2009-05-14 2010-11-18 Eric Hansen Chip-Level Access Control via Radioisotope Doping
DE102011075350A1 (de) * 2011-05-05 2012-11-08 Fachhochschule Jena Energiefilteranordnung für Ionenimplantationsanlagen
JP2017005180A (ja) * 2015-06-15 2017-01-05 三菱電機株式会社 半導体装置の製造方法および半導体装置
DE102015114429B4 (de) 2015-08-28 2017-05-11 Infineon Technologies Ag Partikelbestrahlungsgerät, Strahlmodifikatorvorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung mit einer Junctionabschlussextensionszone
DE102016106119B4 (de) 2016-04-04 2019-03-07 mi2-factory GmbH Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern
DE102016110523B4 (de) 2016-06-08 2023-04-06 Infineon Technologies Ag Verarbeiten einer Leistungshalbleitervorrichtung
DE102016122791B3 (de) 2016-11-25 2018-05-30 mi2-factory GmbH Ionenimplantationsanlage, Filterkammer und Implantationsverfahren unter Einsatz eines Energiefilterelements
DE102017125244B3 (de) 2017-10-27 2019-02-28 Infineon Technologies Ag HALBLEITERVORRICHTUNG MIT JUNCTION-ABSCHLUSSZONE und Verfahren zu deren Herstellung
DE102019112773B4 (de) * 2019-05-15 2023-11-30 mi2-factory GmbH Vorrichtung und Verfahren zur Implantation von Teilchen in ein Substrat
LU101807B1 (en) * 2020-05-15 2021-11-15 Mi2 Factory Gmbh Ion implantation device with energy filter having additional thermal energy dissipation surface area
LU101808B1 (en) 2020-05-15 2021-11-15 Mi2 Factory Gmbh An ion implantation device comprising energy filter and additional heating element
WO2022128593A1 (en) 2020-12-17 2022-06-23 mi2-factory GmbH Energy filter assembly for ion implantation system with at least one coupling element
EP4211712A1 (en) 2020-12-17 2023-07-19 MI2-Factory GmbH Ion implantation device with an energy filter and a support element for overlapping at least part of the energy filter
EP4281991A1 (en) 2021-02-24 2023-11-29 MI2-Factory GmbH A computer-implemented method for the simulation of an energy-filtered ion implantation (efii) using an ion tunnel
JP7706038B2 (ja) 2021-02-24 2025-07-11 エムイー２－ファクトリー・ゲーエムベーハー エネルギーフィルタイオン注入（ｅｆｉｉ）のシミュレーションのためのコンピュータ実装方法
DE102023103315B4 (de) 2023-02-10 2024-11-28 Ernst-Abbe-Hochschule Jena, Körperschaft des öffentlichen Rechts Messvorrichtung, Ionenimplantationsvorrichtung und Verfahren zur ladungsunabhängigen In-Situ-Dosismessung

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US3718502A (en) * 1969-10-15 1973-02-27 J Gibbons Enhancement of diffusion of atoms into a heated substrate by bombardment
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DE2433991A1 (de) * 1974-07-15 1976-02-05 Siemens Ag Verfahren zum dotieren einer halbleiterschicht
DE2439430C2 (de) * 1974-08-16 1983-02-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von homogen dotiertem Halbleitermaterial mit p-Leitfähigkeit
JPS5128777A (en) * 1974-09-04 1976-03-11 Hitachi Ltd Kisei pnpn sairisutanohatsuseioboshishita shusekikairosochi no seizohoho
US4043837A (en) * 1975-01-10 1977-08-23 Westinghouse Electric Corporation Low forward voltage drop thyristor
FR2298880A1 (fr) * 1975-01-22 1976-08-20 Commissariat Energie Atomique Procede et dispositif d'implantation ionique
US3924136A (en) * 1975-02-18 1975-12-02 Stanford Research Inst Charged particle apodized pattern imaging and exposure system
US4021837A (en) * 1975-04-21 1977-05-03 Hutson Jearld L Symmetrical semiconductor switch having carrier lifetime degrading structure
DE2554426C3 (de) * 1975-12-03 1979-06-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor
US4056408A (en) * 1976-03-17 1977-11-01 Westinghouse Electric Corporation Reducing the switching time of semiconductor devices by nuclear irradiation
US4047976A (en) * 1976-06-21 1977-09-13 Motorola, Inc. Method for manufacturing a high-speed semiconductor device
US4098917A (en) * 1976-09-08 1978-07-04 Texas Instruments Incorporated Method of providing a patterned metal layer on a substrate employing metal mask and ion milling
DE2642599A1 (de) * 1976-09-22 1978-03-23 Siemens Ag Verfahren zur herstellung von implantierten gebieten in einem substrat
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US4145233A (en) * 1978-05-26 1979-03-20 Ncr Corporation Method for making narrow channel FET by masking and ion-implantation

Also Published As

Publication number Publication date
JPS55102226A (en) 1980-08-05
JPS596053B2 (ja) 1984-02-08
EP0014516A1 (en) 1980-08-20
US4278475A (en) 1981-07-14
EP0014516B1 (en) 1983-03-16
CA1135876A (en) 1982-11-16
IN152428B (enExample) 1984-01-14
BR7908587A (pt) 1980-09-09

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee