DE3010770A1 - CIRCUIT ARRANGEMENT WITH THIN FILM COMPONENTS - Google Patents

CIRCUIT ARRANGEMENT WITH THIN FILM COMPONENTS

Info

Publication number
DE3010770A1
DE3010770A1 DE3010770A DE3010770A DE3010770A1 DE 3010770 A1 DE3010770 A1 DE 3010770A1 DE 3010770 A DE3010770 A DE 3010770A DE 3010770 A DE3010770 A DE 3010770A DE 3010770 A1 DE3010770 A1 DE 3010770A1
Authority
DE
Germany
Prior art keywords
substrate
film component
circuit arrangement
thin
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE3010770A
Other languages
German (de)
Inventor
Morton Wilson Green
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Publication of DE3010770A1 publication Critical patent/DE3010770A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Conductors (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Details Of Resistors (AREA)

Description

Patentanwälte Dipl. leg. Hans-Jürgen MOIIer Dr. rer. nat. Thomas BerendtPatent attorneys Dipl. Leg. Hans-Jürgen MOIIer Dr. rer. nat. Thomas Berendt

Dr. -1hg. Hans Leyh luctle-Grohn-Stroee 3^ D ß Mönchen I» Dr. -1hg. Hans Leyh luctle-Grohn-Stroee 3 ^ D ß Mönchen I »

-3--3-

Unser Zeichen: A 14 Lh/fiOur reference: A 14 Lh / fi

Perranti LimitedPerranti Limited

Hollinwood, Lancashire, EnglandHollinwood, Lancashire, England

Schaltungsanordnung mit Dünnfilm-KomponentenCircuit arrangement with thin-film components

030041*0643030041 * 0643

Ferranti Ltd. - A 14 368 -Ferranti Ltd. - A 14 368 -

Beschreibungdescription

Die Erfindung betrifft Schaltungsanordnungen, von denen jede wenigstens eine Dünnfilm-Komponente konventioneller Ausbildung hat/ ggf. in Verbindung mit anderen elektrischen Komponenten, wie z.B. Dickfilm-Komponenten und/oder diskreten Komponenten, beispielsweise entsprechenden Widerständen und Kondensatoren, sowie Halbleiter-Komponenten. Jede Dünnfilm-Koinponente umfaßt ein Substrat aus einem elektrisch isolierenden Material.The invention relates to circuit arrangements, each of which at least one thin film component of conventional design has / possibly in connection with other electrical components, such as thick film components and / or discrete components, for example, corresponding resistors and capacitors, as well as semiconductor components. Each thin film component includes a substrate made of an electrically insulating material.

Aus Gründen der Zweckmäßigkeit wird hier eine Schaltungsanordnung beschrieben, die nur wenigstens eine Dünnfilm-Komponente aufweist, es wird aber betont, daß die Schaltungsanordnung auch andere Arten von elektrischen Komponenten, wie Dickfilm-Komponenten und/oder diskret angeordnete Komponenten aufweisen kann.For the sake of convenience, a circuit arrangement is described here which has only at least one thin film component has, but it is emphasized that the circuit arrangement also other types of electrical components, such as thick film components and / or discretely arranged components.

Jede solche Schaltungsanordnung umfaßt ferner von ihr ausgehende Leitungen und Anschlüsse für die Schaltung und es ist erforderlich, die Leitungen mit der Dünnfilm-Komponente zu verbinden, wobei gewöhnlich Drähte, z.B. aus Gold, verwendet werden, die mit den Leitungen und der Dünnfilm-Komponente verbunden sind.Each such circuit arrangement also includes emanating from it Leads and connections for the circuit and it is necessary to connect the leads to the thin film component usually using wires such as gold to attach to the leads and the thin film component are connected.

Es ist bekannt, eine hermetisch dichte Packung für eine Dünnfilm-Komponente zu verwenden, wobei die Packung als Teil der Schaltungsanordnung angesehen wird, und die Dünnfilm-Komponente auf einer Hauptfläche eines wenigstens im wesentlichen planaren Substrates angeordnet bzw. aufgebracht wird, wobei dieses Substrat zusätzlich zu dem Substrat der Dünnfilm-Komponente vorhanden ist, worauf eine Abdeckung hermetisch auf das Substrat, das die Dünnfilm-Komponente trägt, dicht aufgebracht wird.It is known a hermetically sealed package for a thin film component with the package viewed as part of the circuitry, and the thin film component on is arranged or applied to a main surface of an at least substantially planar substrate, this Substrate is present in addition to the substrate of the thin-film component, whereupon a cover is hermetically sealed on the substrate, that carries the thin film component is applied tightly.

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Die nach außen führenden Leitungen der Schaltung werden hermetisch dicht mit dem Substrat verbunden, das die Dünnfilm-Komponente trägt und/oder mit dem Deckel, wobei die zwischen dem Deckel und dem Substrat vorgesehene Dichtung ggf. so angeordnet ist, daß die Leitungen dicht zwischen dem Deckel und dem Substrat durchlaufen. Der von dem Substrat und dem Deckel umschlossene Raum ist entweder evakuiert oder mit einem inerten Gas, wie z.B. Stickstoff, gefüllt. Eine solche Packung für eine Dünnfilm-Komponente ist sehr teuer.The lines leading to the outside of the circuit are hermetically sealed to the substrate that carries the thin-film component and / or to the cover, the between the cover and the substrate provided seal is optionally arranged so that the lines tightly between pass through the lid and the substrate. The space enclosed by the substrate and the lid is either evacuated or filled with an inert gas such as nitrogen. Such a package for a thin film component is very expensive.

Der Erfindung liegt daher die Aufgabe zugrunde, im Rahmen einer Schaltungsanordnung eine zweckmäßige und einfache Packung für eine Dünnfilm-Komponente zu schaffen.The invention is therefore based on the object of providing an expedient and simple circuit arrangement Create package for a thin film component.

Gemäß der Erfindung hat eine Schaltungsanordnung ein wenigstens im wesentlichen planares Substrat, bei dem auf einer Hauptfläche wenigstens eine Dünnfilm-Komponente vorgesehen ist, und das die Komponente tragende Substrat ist mit wenigstens einem integralen Bund versehen, der sich normal zu dieser einen Substrat-Hauptfläche erstreckt und an wenigstens einen Rand des Substrates angrenzt, ferner mit einer Mehrzahl von Leitungen, die sich aus der Schaltung nach außen erstrecken und jede Leitung ein Ende aufweist, das wenigstens benachbart zu dieser einen Hauptfläche liegt und die Leitungen den Bund durchqueren und in dichtem Eingriff mit dem Bund stehen, daß ferner Drähte sowohl mit den Leitungsenden wenigstens benachbart zu dieser einen Hauptfläche und mit der Dünnfilm-Komponente verbunden sind und die letztere, die Drähte und die Leitungsenden wenigstens benachbart zu dieser einen Hauptfläche in ein geeignetes Vergußmaterial eingebettet oder eingekapselt sind.According to the invention, a circuit arrangement has an at least substantially planar substrate in which on at least one thin-film component is provided on a main surface, and which is the substrate carrying the component provided with at least one integral collar which extends normal to this one substrate major surface and adjoins at least one edge of the substrate, furthermore with a plurality of lines, which result from the circuit extend outwardly and each conduit has an end which is at least adjacent to that one major surface and the lines traverse the collar and are in tight engagement stand with the federal government that further wires both with the line ends at least adjacent to this one Main surface and are connected to the thin-film component and the latter, the wires and the line ends at least are embedded or encapsulated in a suitable potting material adjacent to this one main surface.

Eine solche Packung innerhalb einer Schaltungsanordnung fürSuch a pack within a circuit arrangement for

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wenigstens eine Dünnfilm-Komponente ist einfacher und billiger als die bekannten hermetisch abgedichteten Packungen mit einem Deckel.at least one thin film component is simpler and cheaper than the known hermetically sealed packages with a lid.

Es ist bei den bekannten Vergußmassen wesentlich, wenn Drähte durch Thermo-Kompressions-Bindung mit den Leitungsenden und der Dünnfilm-Komponente verbunden werden sollen, daß, wie bei der Herstellung der erfindungsgemäßen Schaltung, diese Verbindung fertiggestellt wird ehe ein Teil der Schaltung in die gewählte Vergußmasse eingebettet wird, weil die für die Thermo-Kompressions-Bindung erforderliche Temperatur das Vergußmaterial nachteilig beeinflussen würde.In the case of the known casting compounds, it is essential if Wires are to be connected to the cable ends and the thin-film component by thermo-compression bonding, that, as in the production of the circuit according to the invention, this connection is completed before part of the circuit is embedded in the selected potting compound because the temperature required for the thermo-compression bond would adversely affect the potting material.

Die Drähte können jedoch mit den Kabelenden und der Dünnfilm-Komponente in jeder geeigneten Weise verbunden werden.However, the wires can be connected to the cable ends and the thin film component connected in any suitable manner.

Es ist zweckmäßig, insbesondere wenn die Drähte durch Thermo-Kompression angeschlossen werden, daß sie aus Gold bestehen, und/oder die Kabelenden, mit denen die Drähte verbunden werden, wenigstens mit Gold überzogen sind, und/oder die Teile innerhalb der Dünnfilm-Komponente, mit denen die Drähte verbunden werden, aus Gold bestehen, wobei diese Teile gewöhnlich Anschlüsse für die Dünnfilm-Komponente enthalten.It is useful, especially when the wires are thermo-compressed that they are made of gold, and / or the cable ends to which the wires are connected are, at least plated with gold, and / or the parts within the thin-film component with which the Wires to be connected are made of gold, these parts usually being connectors for the thin film component contain.

Das Substrat, das die Dünnfilm-Komponente trägt und einen integralen Bund hat, kann aus einem elektrisch isolierenden Material bestehen oder auch aus Metall.The substrate that carries the thin film component and has an integral collar can be made of an electrically insulating Consist of material or made of metal.

Das Vergußmaterial für die Dünnfilm-Komponente, die Drähte und die Kabelenden wenigstens benachbart zu dieser einen Hauptfläche, kann ein geeigneter Kunststoff sein oder ein geeignetes Siliconmaterial.The potting material for the thin-film component, the wires and the cable ends at least adjacent to this one main surface can be a suitable plastic suitable silicone material.

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Eine beispielsweise Ausführungsform der Erfindung wird nachfolgend anhand der einzigen Figur der Zeichnung beschrieben, die perspektivisch eine;» teilweise fertiggestellte Schaltungsanordnung nach der Erfindung zeigt«An example embodiment of the invention is provided below described on the basis of the single figure of the drawing, the perspective one; partially completed circuit arrangement according to the invention shows «

Die dargestellte Schaltungsanordnung umfaßt ein wenigstens im wesentlichen planares Substrat 10, wobei auf einer Hauptfläche 11 des Substrates 10 eine Dünnfilm-Komponente bekannter Form anhaftet bzw. angebracht ist,und die Dünnfilm-Komponente weist ein elektrisch isolierendes Glas-Substrat auf. Aus Gründen der Übersichtlichkeit sind nur einige Anschlüsse 13 aus Gold für die Dünnfilm-Komponente auf dem Substrat 12 dargestellt. Das Substrat 10 besteht aus einem elektrisch isolierenden Material, beispielsweise einem solchen, das Aluminiumoxid enthält.The circuit arrangement shown comprises at least one substantially planar substrate 10, with a thin film component on a major surface 11 of the substrate 10 being known Mold is attached, and the thin film component has an electrically insulating glass substrate. For the sake of clarity, there are only a few connections 13 made of gold for the thin film component on the substrate 12. The substrate 10 consists of a electrically insulating material, for example one containing aluminum oxide.

Die Goldanschlüsse 13 der Dünnfilm-Komponente sind an eine Mehrzahl von Leitungen 14 angeschlossen, die sich aus der Schaltung nach außen erstrecken und Anschlüsse aufweisen, wobei jede Leitung 14 ein Ende 14' angrenzend an die Hauptfläche 11 aufweist. Dünne Golddrähte 16 sind vorgesehen, um die Anschlüsse 13 mit den Kabelenden 14 * in der erforderlichen Weise zu verbinden, wobei die Drähte 16 mit den Anschlüssen 13 und mit den Leitungsenden 14' durch Anwendung bekannter Thermo-Kompressions-Techniken verbunden werden. Die Kabelenden 14* sind mit Gold überzogen, während im übrigen die Leitungen aus einer Eisen-Nickel-Kobalt-Legierung bestehen .The gold terminals 13 of the thin film component are connected to a A plurality of lines 14 connected, which extend outwardly from the circuit and have connections, each conduit 14 having an end 14 'adjacent to the major surface 11. Thin gold wires 16 are provided, around the connections 13 with the cable ends 14 * in the required Way to connect, with the wires 16 to the terminals 13 and with the line ends 14 'by application known thermo-compression techniques. The cable ends 14 * are plated with gold, while the rest the cables are made of an iron-nickel-cobalt alloy.

Bisher wurde die Packung einer Dünnfilm-Komponente, die als Teil einer Schaltungsanordnung angesehen wurde, fertiggestellt indem ein Deckel hermetisch dicht auf das Substrat, das die Dünnfilm-Komponente trägt, aufgebracht wurde. Die nach außen führenden Leitungen sind hermetisch dicht mit dem Substrat,So far, the package has been a thin film component that is known as Part of a circuit arrangement was considered completed by placing a lid hermetically sealed on the substrate that holds the Thin film component carries, was applied. The lines leading to the outside are hermetically sealed with the substrate,

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das die Dünnfilm-Komponente trägt, verbunden worden und/oder mit dem Deckel, wobei die zwischen dem Deckel und dem Substrat vorgesehene Dichtung so ausgebildet war, daß die Leitungen dicht zwischen dem Deckel und dem Substrat hindurchlaufen. Der von dem Substrat und dem Deckel umschlossene Raum ist entweder evakuiert oder mit einem inerten Gas, wie z.B. Stickstoff, gefüllt worden. Ein solcher Packungsaufbau für Dünnfilm-Komponenten ist teuer.that carries the thin film component has been connected and / or with the lid, the seal provided between the lid and the substrate being formed so that the lines pass tightly between the lid and the substrate. The space enclosed by the substrate and the cover is either evacuated or filled with an inert gas such as nitrogen. Such a pack structure for Thin film components are expensive.

Nach der Erfindung ist das Substrat 10, das die Dünnfilm-Komponente trägt, mit einem Bund 20 versehen, der normal zu der Hauptfläche 11 und angrenzend an einen Rand des Substrates verläuft. Die nach außen laufenden Leitungen 14 erstrecken sich durch den Bund 20 in einer gemeinsamen Ebene parallel zu jedoch im Abstand von der Hauptebene 11. Die Leitungen 14 verlaufen dicht bzw. abgedichtet durch Bohrungen 22 im Bund 20, unter Verwendung eines geeigneten Dichtmaterials 23, wie z.B. Glas. Das Substrat 10 mit der an ihm haftenden Dünnfilm-Komponente wird dann auf eine heiße Platte (nicht gezeigt) gebracht, die auf einer Temperatur von 28O°C gehalten wird, und die erforderlichen Thermo-Kompressions-Bindungen zwischen den Golddrähten 16 sowie den Leitungsenden 14' und den Anschlüssen 13 der Dünnfilm-Komponente werden hergestellt. Danach werden das Substrat und die Dünnfilm-Komponente von der heißen Platte heruntergenommen und die Dünnfilm-Komponente, die Golddrähte und die Leitungsenden wenigstens im Bereich angrenzend an die Substratoberfläche, die die Komponente trägt, werden in eine geeignete Vergußmasse 25 eingebettet oder eingegossen. Die Oberfläche der Vergußmasse 25 ist in der Zeichnung durch gestrichelte Linien angedeutet. Wie bekannt, werden geeignete Vergußmassen durch Temperaturen von etwa 28O°C nachteilig beeinflußt, weshalb es wesentlich ist, daß die Thermo-Kompressions-Bindung ausgeführt wird ehe irgendein Teil derIn accordance with the invention, the substrate 10 is the thin film component carries, provided with a collar 20 which is normal to the main surface 11 and adjacent to an edge of the Substrates runs. The outwardly running lines 14 extend through the collar 20 in a common Plane parallel to but at a distance from the main plane 11. The lines 14 run through in a tight or sealed manner Holes 22 in the collar 20 using a suitable sealing material 23 such as glass. The substrate 10 with the adhering to it thin film component is then on a brought hot plate (not shown), which is kept at a temperature of 280 ° C, and the required Thermo-compression bonds between the gold wires 16 and the line ends 14 'and the terminals 13 of the Thin film components are manufactured. Thereafter, the substrate and thin film component are removed from the hot plate taken down and the thin-film component, the gold wires and the line ends at least in the area adjacent a suitable potting compound 25 is embedded or poured onto the substrate surface that carries the component. The surface of the potting compound 25 is indicated in the drawing by dashed lines. As is known, suitable Potting compounds adversely affected by temperatures of about 28O ° C, which is why it is essential that the thermo-compression bond is performed before any part of the

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1077010770

Schaltung in die gewählte Vergußmasse eingebettet wird.Circuit is embedded in the selected potting compound.

Ehe derartige Packungskonstruktion für eine Dünnfilm-Komponente ist einfacher und billiger als die bekannten hermetisch abgedichteten Packungen mit einem Deckel.Before such a package construction for a thin film component is simpler and cheaper than the known hermetically sealed packs with a lid.

Die Verwendung des Substrates 10 mit dem Bund 20 ist vorteilhaft, insofern als solch eine Schaltung leicht zu handhaben ist,und die Dünnfilm-Komponente ist durch den Bund, insbesondere während des Hersteilens der Packung, geschützt. Durch den integralen Bund 20 wird dieser Teil der Schaltung mit den davon ausgehenden Leitungen fester als dies sonst der Fall wäre, und die Schaltung wird als Ganzes fester und stabiler als eine Schaltung, bei der die Dünnfilm-Komponente in ein insgesamt planares Substrat eingegossen ist.The use of the substrate 10 with the collar 20 is advantageous in that such a circuit is easy to use is, and the thin film component is through the fret, especially during the manufacture of the pack. The integral collar 20 makes this part of the circuit with the lines going out therefrom more solidly than it would otherwise, and the circuit as a whole becomes more solid and more stable than a circuit in which the thin-film component is cast into an entirely planar substrate.

Ferner wird durch das Substrat 10 mit dem Bund 20 das Anbringen und die Befestigung der Leitungen 14 am Substrat 10 erleichtert, die von der Schaltung nach außen führen, wenn die Leitungsenden 14' und die Dünnfilm-Komponente in das Vergußmaterial 25 eingebettet werden.Furthermore, the attachment and fastening of the lines 14 to the substrate 10 is facilitated by the substrate 10 with the collar 20 facilitates that lead from the circuit to the outside when the line ends 14 'and the thin film component in the Potting material 25 are embedded.

Ferner wird durch das Substrat 10 mit dem Flansch 20 die Anordnung oder der Aufbau einer Mehrzahl äußerer identischer solcher Schaltungsanordnungen erleichtert, die entweder vertikal übereinander gestapelt werden können, wobei die Bunde in einer gemeinsamen vertikalen Ebene liegen, oder die Schaltungen können horizontal angeordnet werden, wobei beispielsweise zwei benachbarte Paare von Schaltungen mit ihren Flanschen einander gegenüberliegen.Further, the substrate 10 having the flange 20 makes the arrangement or construction of a plurality of externally identical ones such circuit arrangements facilitated, which can either be stacked vertically on top of each other, the Bundles lie in a common vertical plane, or the circuits can be arranged horizontally, being for example, two adjacent pairs of circuits with their flanges facing each other.

Die Leitungen 14 sind dicht durch den Bund 20 in geeigneter Weise hindurchgeführt und es ist nur wesentlich, daß sie durch den Bund hindurchverlaufen. So können sie beispiels-The lines 14 are passed tightly through the collar 20 in a suitable manner and it is only essential that they run through the waistband. For example, you can

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weise entfernt von der die Komponente tragenden Oberfläche des Substrates, z.B. am Rand des Bundes hindurchgeleitet werden, wobei sie wenigstens teilweise durch Kanäle geführt sein können, die im Bund oder am Rand des Bundes ausgebildet sein können. Der Bund kann sich ferner längs mehr als eines Randes des Substrates erstrecken.wisely away from the component-bearing surface of the substrate, e.g. passed through at the edge of the collar be, wherein they can be at least partially passed through channels that are formed in the collar or on the edge of the collar could be. The collar can also extend along more than one edge of the substrate.

Zusätzlich oder alternativ kann mehr als ein Bund vorgesehen werden, der normal zu der die Komponente tragenden Oberfläche des Substrates gerichtet ist, wobei die Leitungen in dichtem Eingriff mit diesen Bunden stehen und diese durchqueren.Additionally or alternatively, more than one collar can be provided which is normal to the surface carrying the component of the substrate is directed with the leads in tight engagement with and traversing these collars.

Die Leitungsenden, mit denen die dünnen Golddrähte verbunden sind, können an die Substratfläche, die die Komponente trägt angrenzen anstatt einen Abstand davon zu haben. Die Dünnfilmkomponente kann jede geeignete Form aufweisen, sie enthält jedoch ein Substrat aus einem elektrisch isolierenden Material. Es können mehr als eine Dünnfilm-Komponente jeweils mit einem Substrat aus elektrisch isolierendem Material auf der Hauptfläche des Substrates angeordnet werden. Andere Arten von elektrischen Komponenten, wie z.B. Dickfilm-Komponenten und/oder diskret abgepackte Komponenten, beispielsweise Widerstände und Kondensatoren sowie Halbleiter-Komponenten, können ebenfalls auf der die Dünnfilm-Komponente tragenden Hauptfläche des Substrates angeordnet werden. Die Leitungen können mit diesen anderen Komponenten durch entsprechende Drähte 16 verbunden werden.The wire ends with which the thin gold wires are connected may be adjacent to the substrate surface that carries the component instead of being spaced therefrom. The thin film component may be of any suitable shape, but includes a substrate of an electrically insulating material. There can be more than one thin film component each with a substrate of electrically insulating material on the main surface of the substrate are arranged. Other types of electrical components, such as thick film components and / or discreetly packaged components, such as resistors and capacitors as well as semiconductor components, can also be arranged on the main surface of the substrate carrying the thin-film component. The lines can be connected to these other components by appropriate wires 16.

Das die Komponente tragende Substrat, das wenigstens einen Bund aufweist, kann auch aus Metall anstatt aus einem elektrisch isolierenden Material bestehen. Die Drähte können mit den Kabelenden und mit den Dünnfilm-Komponenten auch in anderer geeigneter Weise verbunden sdn, anstatt eine Thermo-Kompressions-Verbindung zu verwenden, und die Verwendung der heißen PlatteThe substrate carrying the component, which has at least one collar, can also be made of metal instead of an electrical one insulating material. The wires can be connected to the cable ends and to the thin film components in other too suitably connected sdn rather than a thermo-compression connection to use, and the use of the hot plate

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bei der Herstellung der Schaltung kann vermieden werden.in the manufacture of the circuit can be avoided.

Während es zweckmäßig ist, Thermo-Kompressions-Verbindungen zwischen den Goldteilen der Schaltungsanordnung zu verwenden, können alternativ diese Teile aus Silber, Kupfer oder Aluminium bestehen, und die Thermo-Kompressions-Verbindungen können zwischen Kombinationen von Teilen aus solchen Metallen und Gold hergestellt werden.While it is convenient to use thermo-compression connections between the gold parts of the circuitry, Alternatively, these parts can be made of silver, copper or aluminum, and the thermo-compression connections can be made between combinations of parts made of such metals and gold.

Das Vergußmaterial für die Dünnfilm-Komponenten, die Drähte und die Leitungsenden, wenigstens im Bereich der die Komponenten tragenden Substratfläche, kann ein geeigneter Kunststoff oder ein Siliconmaterial sein.The potting material for the thin-film components, the wires and the line ends, at least in the area of the substrate surface carrying the components, can be a suitable plastic or a silicone material.

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Claims (7)

1077010770 Ferranti Ltd. - Ä 14 368 -Ferranti Ltd. - Ä 14 368 - PatentansprücheClaims Schaltungsanordnung mit wenigstens einer Dünnfilm-Komponente, gekennzeichnet durch ein wenigstens im wesentlichen planares Substrat, auf dessen einer Hauptfläche die Dünnfilm-Komponente angebracht ist, daß das die Komponente tragende Substrat mit wenigstens einem integralen Bund versehen ist, der sich normal zu dieser einen Hauptfläche des Substrates erstreckt und an wenigstens einen Rand des Substrates angrenzt, daß eine Mehrzahl von Leitungen von der Schaltung nach außen führen und jede Leitung wenigstens ein Ende benachbart zu dieser einen Hauptfläche aufweist, daß die Leitungen dicht durch den Bund geführt sind, daß Drähte sowohl mit den Leitungsenden im Bereich dieser einen Hauptfläche und mit der Dünnfilm-Komponente verbunden sind, und daß die letztere, die Drähte und die Leitungsenden wenigstens im Bereich dieser einen Hauptfläche in ein geeignetes Vergußmaterial eingebettet bzw. eingegossen sind.Circuit arrangement with at least one thin-film component, characterized by at least one substantially planar substrate, on one major surface of which the thin-film component is mounted, that the the substrate carrying the component is provided with at least one integral collar which is normal to it extends a major surface of the substrate and adjoins at least one edge of the substrate that a A plurality of lines lead from the circuit to the outside and each line at least one end adjacent to this has a major surface that the lines are tightly guided through the collar that wires both with the line ends in the area of this one main surface and are connected to the thin-film component, and that the latter, the wires and the line ends in a suitable potting material at least in the area of this one main surface are embedded or cast. 2. Schaltungsanordnung nach Anspruch 1, dadurch gekennzeichnet , daß die Drähte mit der Dünnfilm-Komponente und den Leitungsenden mittels Thermo-Kompressions-Bindung verbunden sind.2. Circuit arrangement according to claim 1, characterized in that the wires with the thin-film component and the wire ends are connected by means of thermo-compression bonding. 3. Schaltungsanordnung nach Anspruch 1 oder 2, dadurch gekennzeichnet , daß die Drähte aus Gold bestehen. 3. Circuit arrangement according to claim 1 or 2, characterized in that the wires are made of gold. 4. Schaltungsanordnung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet , daß das die Dünnfilm-Komponente tragende Substrat mit dem integralen Flansch aus einem elektrisch isolierenden Material besteht.4. Circuit arrangement according to one of the preceding claims, characterized in that the thin-film component supporting substrate with the integral flange made of an electrically insulating material. 030041/Ό643030041 / Ό643 -ι--ι- 5. Schaltungsanordnung nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet , daß das die Dünnfilm-Komponente tragende Substrat mit dem integralen Flansch aus Metall besteht.5. Circuit arrangement according to one of claims 1 to 3, characterized in that the substrate carrying the thin film component is integral with the The flange is made of metal. 6. Schaltungsanordnung nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet , daß das Vergußmaterial ein Kunststoffmaterial ist.6. Circuit arrangement according to one of the preceding claims, characterized in that the potting material is a plastic material. 7. Schaltungsanordnung nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet , daß das Vergußmaterial ein Siliconmaterial ist.7. Circuit arrangement according to one of claims 1 to 5, characterized in that the potting material is a silicone material. 030041/0643030041/0643
DE3010770A 1979-03-30 1980-03-20 CIRCUIT ARRANGEMENT WITH THIN FILM COMPONENTS Withdrawn DE3010770A1 (en)

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GB7911308A GB2046024B (en) 1979-03-30 1979-03-30 Circuit assembly

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DE2419157C3 (en) * 1974-04-20 1979-06-28 W.C. Heraeus Gmbh, 6450 Hanau Metallic carrier for semiconductor components and process for its manufacture

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JPS51138179A (en) * 1975-05-23 1976-11-29 Seiko Instr & Electronics Ltd Semi-conductor device

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US3404213A (en) * 1962-07-26 1968-10-01 Owens Illinois Inc Hermetic packages for electronic components
US3178506A (en) * 1962-08-09 1965-04-13 Westinghouse Electric Corp Sealed functional molecular electronic device
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DE2419157C3 (en) * 1974-04-20 1979-06-28 W.C. Heraeus Gmbh, 6450 Hanau Metallic carrier for semiconductor components and process for its manufacture

Also Published As

Publication number Publication date
FR2452787A1 (en) 1980-10-24
GB2046024B (en) 1983-01-26
GB2046024A (en) 1980-11-05
FR2452787B1 (en) 1985-12-06

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