DE2967561D1 - Stripe offset geometry in injection lasers to achieve transverse mode control - Google Patents

Stripe offset geometry in injection lasers to achieve transverse mode control

Info

Publication number
DE2967561D1
DE2967561D1 DE7979301152T DE2967561T DE2967561D1 DE 2967561 D1 DE2967561 D1 DE 2967561D1 DE 7979301152 T DE7979301152 T DE 7979301152T DE 2967561 T DE2967561 T DE 2967561T DE 2967561 D1 DE2967561 D1 DE 2967561D1
Authority
DE
Germany
Prior art keywords
mode control
transverse mode
injection lasers
offset geometry
achieve transverse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7979301152T
Other languages
English (en)
Inventor
Donald R Scifres
Robert D Burnham
William Streifer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE2967561D1 publication Critical patent/DE2967561D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/083—Ring lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE7979301152T 1978-07-03 1979-06-15 Stripe offset geometry in injection lasers to achieve transverse mode control Expired DE2967561D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/921,530 US4251780A (en) 1978-07-03 1978-07-03 Stripe offset geometry in injection lasers to achieve transverse mode control

Publications (1)

Publication Number Publication Date
DE2967561D1 true DE2967561D1 (en) 1986-02-20

Family

ID=25445569

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7979301152T Expired DE2967561D1 (en) 1978-07-03 1979-06-15 Stripe offset geometry in injection lasers to achieve transverse mode control

Country Status (5)

Country Link
US (1) US4251780A (de)
EP (1) EP0006723B1 (de)
JP (1) JPS5511400A (de)
CA (1) CA1134486A (de)
DE (1) DE2967561D1 (de)

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NL7900668A (nl) * 1978-11-08 1980-05-12 Philips Nv Inrichting voor het opwekken of versterken van coheren- te electromagnetische straling, en werkwijze voor het vervaardigen van de inrichting.
US4369513A (en) * 1979-11-09 1983-01-18 Hitachi, Ltd. Semiconductor laser device
US4349905A (en) * 1980-07-22 1982-09-14 Hewlett-Packard Company Tapered stripe semiconductor laser
JPS57130490A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor laser device
US4520485A (en) * 1981-03-17 1985-05-28 Matsushita Electric Industrial Co., Ltd. Semiconductor device
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
JPS6236567U (de) * 1985-08-20 1987-03-04
US4845014A (en) * 1985-10-21 1989-07-04 Rca Corporation Method of forming a channel
US4824747A (en) * 1985-10-21 1989-04-25 General Electric Company Method of forming a variable width channel
US4837775A (en) * 1985-10-21 1989-06-06 General Electric Company Electro-optic device having a laterally varying region
JPS62144378A (ja) * 1985-12-18 1987-06-27 Sony Corp 分布帰還覆半導体レ−ザ−
GB2195822B (en) * 1986-09-30 1990-01-24 Stc Plc Injection lasers
US4791648A (en) * 1987-02-04 1988-12-13 Amoco Corporation Laser having a substantially planar waveguide
JPS63258090A (ja) * 1987-04-15 1988-10-25 Sharp Corp 半導体レ−ザ装置
US4793679A (en) * 1987-04-20 1988-12-27 General Electric Company Optical coupling system
US4821276A (en) * 1987-04-20 1989-04-11 General Electric Company Super-luminescent diode
US4821277A (en) * 1987-04-20 1989-04-11 General Electric Company Super-luminescent diode
US4789881A (en) * 1987-04-20 1988-12-06 General Electric Company Low coherence optical system having reflective means
US4942585A (en) * 1987-12-22 1990-07-17 Ortel Corporation High power semiconductor laser
US4856017A (en) * 1987-12-22 1989-08-08 Ortel Corporation Single frequency high power semiconductor laser
US4868839A (en) * 1988-03-14 1989-09-19 Trw Inc. Semiconductor laser array with nonplanar diffraction region
US4958355A (en) * 1989-03-29 1990-09-18 Rca Inc. High performance angled stripe superluminescent diode
US5555544A (en) * 1992-01-31 1996-09-10 Massachusetts Institute Of Technology Tapered semiconductor laser oscillator
US5392308A (en) * 1993-01-07 1995-02-21 Sdl, Inc. Semiconductor laser with integral spatial mode filter
US5537432A (en) * 1993-01-07 1996-07-16 Sdl, Inc. Wavelength-stabilized, high power semiconductor laser
US5499261A (en) * 1993-01-07 1996-03-12 Sdl, Inc. Light emitting optical device with on-chip external cavity reflector
US5802084A (en) * 1994-11-14 1998-09-01 The Regents Of The University Of California Generation of high power optical pulses using flared mode-locked semiconductor lasers and optical amplifiers
US5809053A (en) * 1995-07-05 1998-09-15 Hitachi, Ltd. Semiconductor laser device and optical printing apparatus using the same
JP3314616B2 (ja) * 1995-10-05 2002-08-12 株式会社デンソー 大出力用半導体レーザ素子
GB2317744B (en) * 1996-09-27 2001-11-21 Marconi Gec Ltd Improvements in and relating to lasers
KR20020081237A (ko) 1999-12-27 2002-10-26 코닝 오.티.아이. 에스피에이 발산영역을 가진 반도체 레이저 엘리먼트
US6542529B1 (en) 2000-02-01 2003-04-01 Jds Uniphase Corporation Folded cavity, broad area laser source
US6816531B1 (en) 2000-03-03 2004-11-09 Jds Uniphase Corporation High-power, kink-free, single mode laser diodes
US6567446B1 (en) * 2000-08-16 2003-05-20 Agere Systems Inc Optical device with increased spectral width
US20030219053A1 (en) * 2002-05-21 2003-11-27 The Board Of Trustees Of The University Of Illinois Index guided laser structure
JP2004214226A (ja) * 2002-12-26 2004-07-29 Toshiba Corp 半導体レーザ装置
JP2006049650A (ja) 2004-08-05 2006-02-16 Hamamatsu Photonics Kk 半導体レーザ素子及び半導体レーザ素子アレイ
JP2006086228A (ja) * 2004-09-14 2006-03-30 Hamamatsu Photonics Kk 半導体レーザ素子及び半導体レーザ素子アレイ
JP2007251064A (ja) * 2006-03-17 2007-09-27 Toyota Central Res & Dev Lab Inc 半導体レーザー装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51100687A (ja) * 1975-03-03 1976-09-06 Nippon Electric Co Nijuheterosetsugoreeza
JPS51135483A (en) * 1975-05-20 1976-11-24 Matsushita Electric Ind Co Ltd Semiconductor laser device
NL7607299A (nl) * 1976-07-02 1978-01-04 Philips Nv Injektielaser.
JPS5390890A (en) * 1977-01-21 1978-08-10 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser device

Also Published As

Publication number Publication date
JPH036676B2 (de) 1991-01-30
JPS5511400A (en) 1980-01-26
EP0006723A2 (de) 1980-01-09
EP0006723A3 (en) 1980-01-23
EP0006723B1 (de) 1986-01-08
US4251780A (en) 1981-02-17
CA1134486A (en) 1982-10-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee