EP0006723A3 - Stripe offset geometry in injection lasers to achieve transverse mode control - Google Patents
Stripe offset geometry in injection lasers to achieve transverse mode control Download PDFInfo
- Publication number
- EP0006723A3 EP0006723A3 EP79301152A EP79301152A EP0006723A3 EP 0006723 A3 EP0006723 A3 EP 0006723A3 EP 79301152 A EP79301152 A EP 79301152A EP 79301152 A EP79301152 A EP 79301152A EP 0006723 A3 EP0006723 A3 EP 0006723A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- mode control
- transverse mode
- injection lasers
- offset geometry
- achieve transverse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/083—Ring lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/921,530 US4251780A (en) | 1978-07-03 | 1978-07-03 | Stripe offset geometry in injection lasers to achieve transverse mode control |
US921530 | 1986-10-21 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0006723A2 EP0006723A2 (en) | 1980-01-09 |
EP0006723A3 true EP0006723A3 (en) | 1980-01-23 |
EP0006723B1 EP0006723B1 (en) | 1986-01-08 |
Family
ID=25445569
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP79301152A Expired EP0006723B1 (en) | 1978-07-03 | 1979-06-15 | Stripe offset geometry in injection lasers to achieve transverse mode control |
Country Status (5)
Country | Link |
---|---|
US (1) | US4251780A (en) |
EP (1) | EP0006723B1 (en) |
JP (1) | JPS5511400A (en) |
CA (1) | CA1134486A (en) |
DE (1) | DE2967561D1 (en) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7900668A (en) * | 1978-11-08 | 1980-05-12 | Philips Nv | APPARATUS FOR GENERATING OR AMPLIFYING COHERENTAL ELECTROMAGNETIC RADIATION, AND METHOD FOR MANUFACTURING THE APPARATUS |
US4369513A (en) * | 1979-11-09 | 1983-01-18 | Hitachi, Ltd. | Semiconductor laser device |
US4349905A (en) * | 1980-07-22 | 1982-09-14 | Hewlett-Packard Company | Tapered stripe semiconductor laser |
JPS57130490A (en) * | 1981-02-06 | 1982-08-12 | Hitachi Ltd | Semiconductor laser device |
US4520485A (en) * | 1981-03-17 | 1985-05-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
GB2139422B (en) * | 1983-03-24 | 1987-06-03 | Hitachi Ltd | Semiconductor laser and method of fabricating the same |
JPS6236567U (en) * | 1985-08-20 | 1987-03-04 | ||
US4824747A (en) * | 1985-10-21 | 1989-04-25 | General Electric Company | Method of forming a variable width channel |
US4845014A (en) * | 1985-10-21 | 1989-07-04 | Rca Corporation | Method of forming a channel |
US4837775A (en) * | 1985-10-21 | 1989-06-06 | General Electric Company | Electro-optic device having a laterally varying region |
JPS62144378A (en) * | 1985-12-18 | 1987-06-27 | Sony Corp | Distributed feedback type semiconductor laser |
GB2195822B (en) * | 1986-09-30 | 1990-01-24 | Stc Plc | Injection lasers |
US4791648A (en) * | 1987-02-04 | 1988-12-13 | Amoco Corporation | Laser having a substantially planar waveguide |
JPS63258090A (en) * | 1987-04-15 | 1988-10-25 | Sharp Corp | Semiconductor laser device |
US4793679A (en) * | 1987-04-20 | 1988-12-27 | General Electric Company | Optical coupling system |
US4821277A (en) * | 1987-04-20 | 1989-04-11 | General Electric Company | Super-luminescent diode |
US4789881A (en) * | 1987-04-20 | 1988-12-06 | General Electric Company | Low coherence optical system having reflective means |
US4821276A (en) * | 1987-04-20 | 1989-04-11 | General Electric Company | Super-luminescent diode |
US4942585A (en) * | 1987-12-22 | 1990-07-17 | Ortel Corporation | High power semiconductor laser |
US4856017A (en) * | 1987-12-22 | 1989-08-08 | Ortel Corporation | Single frequency high power semiconductor laser |
US4868839A (en) * | 1988-03-14 | 1989-09-19 | Trw Inc. | Semiconductor laser array with nonplanar diffraction region |
US4958355A (en) * | 1989-03-29 | 1990-09-18 | Rca Inc. | High performance angled stripe superluminescent diode |
US5555544A (en) * | 1992-01-31 | 1996-09-10 | Massachusetts Institute Of Technology | Tapered semiconductor laser oscillator |
US5537432A (en) * | 1993-01-07 | 1996-07-16 | Sdl, Inc. | Wavelength-stabilized, high power semiconductor laser |
US5499261A (en) * | 1993-01-07 | 1996-03-12 | Sdl, Inc. | Light emitting optical device with on-chip external cavity reflector |
US5392308A (en) * | 1993-01-07 | 1995-02-21 | Sdl, Inc. | Semiconductor laser with integral spatial mode filter |
US5802084A (en) * | 1994-11-14 | 1998-09-01 | The Regents Of The University Of California | Generation of high power optical pulses using flared mode-locked semiconductor lasers and optical amplifiers |
US5809053A (en) * | 1995-07-05 | 1998-09-15 | Hitachi, Ltd. | Semiconductor laser device and optical printing apparatus using the same |
JP3314616B2 (en) * | 1995-10-05 | 2002-08-12 | 株式会社デンソー | High power semiconductor laser device |
GB2317744B (en) * | 1996-09-27 | 2001-11-21 | Marconi Gec Ltd | Improvements in and relating to lasers |
KR20020081237A (en) | 1999-12-27 | 2002-10-26 | 코닝 오.티.아이. 에스피에이 | Semiconductor laser element having a diverging region |
US6542529B1 (en) | 2000-02-01 | 2003-04-01 | Jds Uniphase Corporation | Folded cavity, broad area laser source |
US6816531B1 (en) | 2000-03-03 | 2004-11-09 | Jds Uniphase Corporation | High-power, kink-free, single mode laser diodes |
US6567446B1 (en) * | 2000-08-16 | 2003-05-20 | Agere Systems Inc | Optical device with increased spectral width |
US20030219053A1 (en) * | 2002-05-21 | 2003-11-27 | The Board Of Trustees Of The University Of Illinois | Index guided laser structure |
JP2004214226A (en) * | 2002-12-26 | 2004-07-29 | Toshiba Corp | Semiconductor laser device |
JP2006049650A (en) | 2004-08-05 | 2006-02-16 | Hamamatsu Photonics Kk | Semiconductor laser element and array thereof |
JP2006086228A (en) * | 2004-09-14 | 2006-03-30 | Hamamatsu Photonics Kk | Array for semiconductor laser element |
JP2007251064A (en) * | 2006-03-17 | 2007-09-27 | Toyota Central Res & Dev Lab Inc | Semiconductor laser device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51100687A (en) * | 1975-03-03 | 1976-09-06 | Nippon Electric Co | NIJUHETEROSET SUGOREEZA |
JPS51135483A (en) * | 1975-05-20 | 1976-11-24 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
NL7607299A (en) * | 1976-07-02 | 1978-01-04 | Philips Nv | INJECTION LASER. |
JPS5390890A (en) * | 1977-01-21 | 1978-08-10 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
-
1978
- 1978-07-03 US US05/921,530 patent/US4251780A/en not_active Expired - Lifetime
-
1979
- 1979-05-09 CA CA000327238A patent/CA1134486A/en not_active Expired
- 1979-06-15 EP EP79301152A patent/EP0006723B1/en not_active Expired
- 1979-06-15 DE DE7979301152T patent/DE2967561D1/en not_active Expired
- 1979-07-03 JP JP8435179A patent/JPS5511400A/en active Granted
Non-Patent Citations (3)
Title |
---|
APPLIED PHYSICS LETTERS, Vol. 32, No. 4, February 1978, New York USA D.R. SCIFRES et al "Curved stripe Ga As: GaA1As diode lasers and waveguides", pages 231-4. * Page 231; page 233, 2nd and 3rd paragraph; figures 1,2,4 * * |
IEEE JOURNAL OF QUANTUM ELECTRONICS, Vol. QE 13, No. 8, August 1977, New York USA N. MATSUMOTO "The bent-guide structure A1GaAs-GaAs semiconductor lsser", pages 560-4. * Page 561 - page 563; figures 2,3,9,10,11,12(c) * * |
JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 16, No. 10, October 1977. Tokyo, Japan N. MATSUMOTO et al. "Semicondutor lasers with bent guide of planar structure", pages 1885-1886. * Page 1885; figures 1-2 * * |
Also Published As
Publication number | Publication date |
---|---|
US4251780A (en) | 1981-02-17 |
JPS5511400A (en) | 1980-01-26 |
EP0006723B1 (en) | 1986-01-08 |
JPH036676B2 (en) | 1991-01-30 |
DE2967561D1 (en) | 1986-02-20 |
EP0006723A2 (en) | 1980-01-09 |
CA1134486A (en) | 1982-10-26 |
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Legal Events
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
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PUAL | Search report despatched |
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AK | Designated contracting states |
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REF | Corresponds to: |
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ET | Fr: translation filed | ||
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PLBE | No opposition filed within time limit |
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STAA | Information on the status of an ep patent application or granted ep patent |
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