JPS6236567U - - Google Patents
Info
- Publication number
- JPS6236567U JPS6236567U JP12757585U JP12757585U JPS6236567U JP S6236567 U JPS6236567 U JP S6236567U JP 12757585 U JP12757585 U JP 12757585U JP 12757585 U JP12757585 U JP 12757585U JP S6236567 U JPS6236567 U JP S6236567U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- substrate
- cladding layer
- active layer
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000005253 cladding Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 2
Description
第１図ないし第３図はこの考案の半導体レーザ
の１実施例を示し、第１図ａ，ｂはそれぞれ平面
図および切断正面図、第２図ａ，ｂ，ｃはそれぞ
れ異なる周囲温度における軸モードスペクトルを
示す図、第３図は戻り光量とＳＮ比との関係図、
第４図ａ，ｂ，ｃは従来の半導体レーザのそれぞ
れ異なる周囲温度における軸モードスペクトルを
示す図である。
１……基板、５……下部クラツド層、６……活
性層、７……上部クラツド層。
1 to 3 show one embodiment of the semiconductor laser of this invention, FIGS. 1 a and b are a plan view and a cut front view, respectively, and FIGS. 2 a, b, and c are axial views at different ambient temperatures. A diagram showing the mode spectrum, Figure 3 is a diagram of the relationship between the amount of returned light and the SN ratio,
FIGS. 4a, 4b, and 4c are diagrams showing axial mode spectra of a conventional semiconductor laser at different ambient temperatures. DESCRIPTION OF SYMBOLS 1...Substrate, 5...Lower cladding layer, 6...Active layer, 7...Upper cladding layer.
Claims (1)
れた半導体下部クラツド層、半導体活性層、半導
体上部クラツド層からなり、前記活性層がストラ
イプ状の電流通路部を有する半導体レーザにおい
て、前記電流通路部に前記基板の表面に平行な方
向への屈曲部を設けた半導体レーザ。 A semiconductor laser comprising a semiconductor substrate, a semiconductor lower cladding layer, a semiconductor active layer, and a semiconductor upper cladding layer sequentially stacked on the semiconductor substrate, and in which the active layer has a striped current path portion. A semiconductor laser with a bent portion parallel to the surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12757585U JPS6236567U (en) | 1985-08-20 | 1985-08-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12757585U JPS6236567U (en) | 1985-08-20 | 1985-08-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6236567U true JPS6236567U (en) | 1987-03-04 |
Family
ID=31022457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12757585U Pending JPS6236567U (en) | 1985-08-20 | 1985-08-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6236567U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52155991A (en) * | 1976-06-21 | 1977-12-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light emitting element |
| JPS5511400A (en) * | 1978-07-03 | 1980-01-26 | Xerox Corp | Injection laser |
-
1985
- 1985-08-20 JP JP12757585U patent/JPS6236567U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52155991A (en) * | 1976-06-21 | 1977-12-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light emitting element |
| JPS5511400A (en) * | 1978-07-03 | 1980-01-26 | Xerox Corp | Injection laser |