DE2965749D1 - Power supply device for solid-state memories - Google Patents

Power supply device for solid-state memories

Info

Publication number
DE2965749D1
DE2965749D1 DE7979103921T DE2965749T DE2965749D1 DE 2965749 D1 DE2965749 D1 DE 2965749D1 DE 7979103921 T DE7979103921 T DE 7979103921T DE 2965749 T DE2965749 T DE 2965749T DE 2965749 D1 DE2965749 D1 DE 2965749D1
Authority
DE
Germany
Prior art keywords
solid
power supply
supply device
state memories
memories
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7979103921T
Other languages
English (en)
Inventor
Herve Leonard Beranger
Claude Marzin
Dominique Marcel Omet
Jean-Luc Peter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE2965749D1 publication Critical patent/DE2965749D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Static Random-Access Memory (AREA)
  • Power Sources (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Direct Current Feeding And Distribution (AREA)
DE7979103921T 1978-11-30 1979-10-12 Power supply device for solid-state memories Expired DE2965749D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7834434A FR2443118A1 (fr) 1978-11-30 1978-11-30 Dispositif pour l'alimentation des memoires monolithiques

Publications (1)

Publication Number Publication Date
DE2965749D1 true DE2965749D1 (en) 1983-07-28

Family

ID=9215780

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7979103921T Expired DE2965749D1 (en) 1978-11-30 1979-10-12 Power supply device for solid-state memories

Country Status (5)

Country Link
US (1) US4295210A (de)
EP (1) EP0011700B1 (de)
JP (1) JPS6037555B2 (de)
DE (1) DE2965749D1 (de)
FR (1) FR2443118A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2929384C2 (de) * 1979-07-20 1981-07-30 Ibm Deutschland Gmbh, 7000 Stuttgart Nachladeschaltung für einen Halbleiterspeicher
DE3004565C2 (de) * 1980-02-07 1984-06-14 Siemens AG, 1000 Berlin und 8000 München Integrierte digitale Halbleiterschaltung
JPS56143587A (en) * 1980-03-26 1981-11-09 Fujitsu Ltd Static type memory circuit
EP0048782B1 (de) * 1980-09-26 1985-05-02 International Business Machines Corporation Decodier- und Auswahlschaltung für einen monolithischen Speicher
US4422162A (en) * 1980-10-01 1983-12-20 Motorola, Inc. Non-dissipative memory system
FR2522432A1 (fr) * 1982-02-26 1983-09-02 Radiotechnique Compelec Procede pour obtenir la decharge rapide d'une rangee de matrice memoire, et circuit de decharge dynamique correspondant
EP0130262B1 (de) * 1983-06-30 1987-11-19 International Business Machines Corporation Logische Schaltungen, die eine Bildung von sehr dichten logischen Netzwerken gestatten
JPS6080195A (ja) * 1983-10-07 1985-05-08 Fujitsu Ltd 半導体記憶装置
US4627034A (en) * 1984-11-09 1986-12-02 Fairchild Camera And Instrument Corporation Memory cell power scavenging apparatus and method
FR2580420B1 (fr) * 1985-04-16 1991-05-31 Radiotechnique Compelec Decodeur a diodes notamment utilisable dans une memoire bipolaire
FR2580444B1 (fr) * 1985-04-16 1987-06-05 Radiotechnique Compelec Etage de commutation du type darlington notamment pour un decodeur de lignes d'une memoire

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
US3541531A (en) * 1967-02-07 1970-11-17 Bell Telephone Labor Inc Semiconductive memory array wherein operating power is supplied via information paths
US3537078A (en) * 1968-07-11 1970-10-27 Ibm Memory cell with a non-linear collector load
US3621302A (en) * 1969-01-15 1971-11-16 Ibm Monolithic-integrated semiconductor array having reduced power consumption
US3636377A (en) * 1970-07-21 1972-01-18 Semi Conductor Electronic Memo Bipolar semiconductor random access memory
US3688280A (en) * 1970-09-22 1972-08-29 Ibm Monolithic memory system with bi-level powering for reduced power consumption
US3725878A (en) * 1970-10-30 1973-04-03 Ibm Memory cell circuit
US3732440A (en) * 1971-12-23 1973-05-08 Ibm Address decoder latch
US3736574A (en) * 1971-12-30 1973-05-29 Ibm Pseudo-hierarchy memory system
US4057789A (en) * 1974-06-19 1977-11-08 International Business Machines Corporation Reference voltage source for memory cells
JPS5375828A (en) * 1976-12-17 1978-07-05 Hitachi Ltd Semiconductor circuit
US4104734A (en) * 1977-06-30 1978-08-01 Fairchild Camera And Instrument Corporation Low voltage data retention bias circuitry for volatile memories

Also Published As

Publication number Publication date
FR2443118A1 (fr) 1980-06-27
EP0011700A1 (de) 1980-06-11
EP0011700B1 (de) 1983-06-22
JPS5577099A (en) 1980-06-10
JPS6037555B2 (ja) 1985-08-27
US4295210A (en) 1981-10-13

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee