DE2922301C2 - Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung - Google Patents

Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung

Info

Publication number
DE2922301C2
DE2922301C2 DE2922301A DE2922301A DE2922301C2 DE 2922301 C2 DE2922301 C2 DE 2922301C2 DE 2922301 A DE2922301 A DE 2922301A DE 2922301 A DE2922301 A DE 2922301A DE 2922301 C2 DE2922301 C2 DE 2922301C2
Authority
DE
Germany
Prior art keywords
zone
emitter
thyristor
fet
phototransistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2922301A
Other languages
German (de)
English (en)
Other versions
DE2922301A1 (de
Inventor
Jenö Dipl.-Phys. Dr. 8000 München Tihanyi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2922301A priority Critical patent/DE2922301C2/de
Priority to JP6049080A priority patent/JPS55162281A/ja
Priority to EP80102973A priority patent/EP0021086B1/de
Publication of DE2922301A1 publication Critical patent/DE2922301A1/de
Application granted granted Critical
Publication of DE2922301C2 publication Critical patent/DE2922301C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
DE2922301A 1979-05-31 1979-05-31 Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung Expired DE2922301C2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE2922301A DE2922301C2 (de) 1979-05-31 1979-05-31 Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung
JP6049080A JPS55162281A (en) 1979-05-31 1980-05-07 Light controlled thyristor
EP80102973A EP0021086B1 (de) 1979-05-31 1980-05-28 Lichtsteuerbare Anordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2922301A DE2922301C2 (de) 1979-05-31 1979-05-31 Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
DE2922301A1 DE2922301A1 (de) 1980-12-04
DE2922301C2 true DE2922301C2 (de) 1985-04-25

Family

ID=6072219

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2922301A Expired DE2922301C2 (de) 1979-05-31 1979-05-31 Lichtsteuerbarer Thyristor und Verfahren zu seiner Herstellung

Country Status (3)

Country Link
EP (1) EP0021086B1 (enExample)
JP (1) JPS55162281A (enExample)
DE (1) DE2922301C2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2945335A1 (de) * 1979-11-09 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor
US4489340A (en) * 1980-02-04 1984-12-18 Nippon Telegraph & Telephone Public Corporation PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
DE3019907A1 (de) * 1980-05-23 1981-12-03 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer zweirichtungsthyristor
DE3112940A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor mit anschaltbarer innerer stromverstaerkerung und verfahren zu seinem betrieb
DE3226613A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf
DE3226624A1 (de) * 1982-07-16 1984-01-19 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit geringem lichtleistungsbedarf und hoher kritischer spannungsanstiegsgeschwindigkeit
DE3240564A1 (de) * 1982-11-03 1984-05-03 Licentia Patent-Verwaltungs-Gmbh Steuerbares halbleiterschaltelement
US4553041A (en) * 1983-08-22 1985-11-12 Motorola, Inc. Monolithic zero crossing triac driver
JPH0779159B2 (ja) * 1984-03-22 1995-08-23 潤一 西澤 光トリガ・光クエンチ可能なサイリスタ装置
DE3431817C2 (de) * 1984-08-30 1986-07-10 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Lichtzündbarer Thyristor
JPS61137365A (ja) * 1984-12-08 1986-06-25 Semiconductor Res Found 光トリガ・光クエンチ静電誘導サイリスタ
JPS61270867A (ja) * 1985-05-25 1986-12-01 Matsushita Electric Works Ltd 半導体装置
DE3926200A1 (de) * 1989-08-08 1991-02-14 Siemens Ag Lichtsteuerbares halbleiterbauelement mit einem feldeffekttransistor
JP3016302B2 (ja) * 1992-04-23 2000-03-06 日本電気株式会社 ｐｎｐｎ半導体素子とその駆動回路
JP3495847B2 (ja) * 1995-09-11 2004-02-09 シャープ株式会社 サイリスタを備える半導体集積回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE338611B (enExample) * 1969-09-01 1971-09-13 Asea Ab
JPS4883768U (enExample) * 1972-01-18 1973-10-12
JPS5641186B2 (enExample) * 1972-03-03 1981-09-26
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5933986B2 (ja) * 1975-09-12 1984-08-20 三菱電機株式会社 半導体装置
JPS53159275U (enExample) * 1977-05-20 1978-12-13

Also Published As

Publication number Publication date
DE2922301A1 (de) 1980-12-04
EP0021086B1 (de) 1983-05-18
JPS55162281A (en) 1980-12-17
JPH0117268B2 (enExample) 1989-03-29
EP0021086A1 (de) 1981-01-07

Similar Documents

Publication Publication Date Title
DE2625917C3 (de) Halbleiteranordnung
DE2932152A1 (de) Ueberspannungsschutz zum schutz von einheiten, die halbleiterbauelemente fuer kleine leistungen enthalten
DE10322593A1 (de) Halbleiterbauteil und dieses verwendender integrierter Schaltkreis
DE2047166A1 (de) Halbleitervorrichtung
EP0021086B1 (de) Lichtsteuerbare Anordnung
DE102005021249B4 (de) Halbleitervorrichtung
DE3345189C2 (enExample)
DE2511281C2 (de) Fotothyristor
EP0028798B1 (de) Thyristor mit Hilfsemitterelektrode und Verfahren zu seinem Betrieb
EP0029163B1 (de) Lichtzündbarer Thyristor und Verfahren zu seinem Betrieb
EP0430133B1 (de) Leistungs-Halbleiterbauelement mit Emitterkurzschlüssen
DE3443363A1 (de) Halbleitervorrichtung
DE1539070A1 (de) Halbleiteranordnungen mit kleinen Oberflaechenstroemen
EP0206350B1 (de) Thyristor mit verminderter Mittelzonendicke
EP0062100B1 (de) Thyristor mit innerer Stromverstärkung und Verfahren zu seinem Betrieb
EP0062102A2 (de) Thyristor mit anschaltbarer innerer Stromverstärkung und Verfahren zu seinem Betrieb
EP0656659A2 (de) ESD-Schutzstruktur für integrierte Schaltungen
DE69432111T2 (de) Bipolartransistor mit isoliertem Gate
DE1202906B (de) Steuerbarer Halbleitergleichrichter mit einem scheibenfoermigen vierschichtigen einkristallinen Halbleiterkoerper und Verfahren zu seinem Herstellen
DE2410721A1 (de) Steuerbares halbleiter-gleichrichterelement
DE1816009A1 (de) Thyristor
DE2646822C3 (de) Wärmeempfindliches Halbleiterbauelement zum thermisch gesteuerten Schalten
DE3002797A1 (de) In monolithisch integrierter technik ausgefuehrte kollektor-basis-diode
DE3837747C2 (de) Halbleiterschalter mit einem Hauptthyristor und einem getrennten, lichtzündbaren Hilfsthyristor
DE19849902A1 (de) Halbleiterbauelement

Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee