DE2861842D1 - Process for manufacturing a mask according to a given pattern on a support - Google Patents

Process for manufacturing a mask according to a given pattern on a support

Info

Publication number
DE2861842D1
DE2861842D1 DE7878430002T DE2861842T DE2861842D1 DE 2861842 D1 DE2861842 D1 DE 2861842D1 DE 7878430002 T DE7878430002 T DE 7878430002T DE 2861842 T DE2861842 T DE 2861842T DE 2861842 D1 DE2861842 D1 DE 2861842D1
Authority
DE
Germany
Prior art keywords
manufacturing
support
mask according
given pattern
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7878430002T
Other languages
English (en)
Inventor
Tai Hon Philip Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE2861842D1 publication Critical patent/DE2861842D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0278—Röntgenlithographic or X-ray lithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Architecture (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Weting (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
DE7878430002T 1977-06-30 1978-06-22 Process for manufacturing a mask according to a given pattern on a support Expired DE2861842D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/811,757 US4165395A (en) 1977-06-30 1977-06-30 Process for forming a high aspect ratio structure by successive exposures with electron beam and actinic radiation

Publications (1)

Publication Number Publication Date
DE2861842D1 true DE2861842D1 (en) 1982-07-08

Family

ID=25207486

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7878430002T Expired DE2861842D1 (en) 1977-06-30 1978-06-22 Process for manufacturing a mask according to a given pattern on a support

Country Status (4)

Country Link
US (1) US4165395A (de)
EP (1) EP0001030B1 (de)
JP (1) JPS6055825B2 (de)
DE (1) DE2861842D1 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2807478A1 (de) * 1978-02-22 1979-08-23 Ibm Deutschland Belichtungsverfahren
US4341850A (en) * 1979-07-19 1982-07-27 Hughes Aircraft Company Mask structure for forming semiconductor devices, comprising electron-sensitive resist patterns with controlled line profiles
US4283483A (en) * 1979-07-19 1981-08-11 Hughes Aircraft Company Process for forming semiconductor devices using electron-sensitive resist patterns with controlled line profiles
US4323638A (en) * 1980-08-18 1982-04-06 Bell Telephone Laboratories, Incorporated Reducing charging effects in charged-particle-beam lithography
US4352835A (en) * 1981-07-01 1982-10-05 Western Electric Co., Inc. Masking portions of a substrate
FR2519157B1 (fr) * 1981-12-30 1987-07-31 Labo Electronique Physique Procede pour la realisation de motifs submicroniques et motifs ainsi obtenus
US4717644A (en) * 1982-12-20 1988-01-05 International Business Machines Corporation Hybrid electron beam and optical lithography method
US4612275A (en) * 1985-04-26 1986-09-16 International Business Machines Corporation Multilayer resists with improved sensitivity and reduced proximity effect
US4745044A (en) * 1985-04-26 1988-05-17 International Business Machines Corporation Multilayer resists with improved sensitivity and reduced proximity effect
JPS63114214A (ja) * 1986-09-11 1988-05-19 フェアチャイルド　セミコンダクタ　コーポレーション 二層マスクを使用するプラズマエッチング
US5045150A (en) * 1986-09-11 1991-09-03 National Semiconductor Corp. Plasma etching using a bilayer mask
US5091342A (en) * 1989-02-24 1992-02-25 Hewlett-Packard Company Multilevel resist plated transfer layer process for fine line lithography
US5719009A (en) * 1992-08-07 1998-02-17 E. I. Du Pont De Nemours And Company Laser ablatable photosensitive elements utilized to make flexographic printing plates
US5662770A (en) 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
US6756181B2 (en) 1993-06-25 2004-06-29 Polyfibron Technologies, Inc. Laser imaged printing plates
WO1996007954A1 (en) * 1994-09-09 1996-03-14 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Microstructures and methods for manufacturing microstructures
US6238837B1 (en) * 1995-05-01 2001-05-29 E.I. Du Pont De Nemours And Company Flexographic element having an infrared ablatable layer
EP0913730B1 (de) * 1997-11-03 2007-07-25 Stork Prints Austria GmbH Verfahren zum Herstellen einer Druckform
US6410453B1 (en) * 1999-09-02 2002-06-25 Micron Technology, Inc. Method of processing a substrate
US6482558B1 (en) 2000-10-24 2002-11-19 Advanced Micro Devices, Inc. Conducting electron beam resist thin film layer for patterning of mask plates
US7078348B1 (en) * 2001-06-27 2006-07-18 Advanced Micro Devices, Inc. Dual layer patterning scheme to make dual damascene
US6881203B2 (en) 2001-09-05 2005-04-19 3M Innovative Properties Company Microneedle arrays and methods of manufacturing the same
JP3658355B2 (ja) * 2001-10-03 2005-06-08 Ｈｏｙａ株式会社 塗布膜の乾燥方法、塗布膜の形成方法、及び塗布膜形成装置
EP1523367A1 (de) * 2002-07-19 2005-04-20 3M Innovative Properties Company Mikronadel anordnung und mikronadel verabreichungsgerät
US7415299B2 (en) * 2003-04-18 2008-08-19 The Regents Of The University Of California Monitoring method and/or apparatus
WO2005060621A2 (en) * 2003-11-21 2005-07-07 The Regents Of The University Of California Method and/or apparatus for puncturing a surface for extraction, in situ analysis, and/or substance delivery using microneedles
CA2602259A1 (en) * 2005-03-29 2006-10-05 Arkal Medical, Inc. Devices, systems, methods and tools for continuous glucose monitoring
US20100049021A1 (en) * 2006-03-28 2010-02-25 Jina Arvind N Devices, systems, methods and tools for continuous analyte monitoring
US20080154107A1 (en) * 2006-12-20 2008-06-26 Jina Arvind N Device, systems, methods and tools for continuous glucose monitoring
US20090131778A1 (en) * 2006-03-28 2009-05-21 Jina Arvind N Devices, systems, methods and tools for continuous glucose monitoring
US20080058726A1 (en) * 2006-08-30 2008-03-06 Arvind Jina Methods and Apparatus Incorporating a Surface Penetration Device
US20080234562A1 (en) * 2007-03-19 2008-09-25 Jina Arvind N Continuous analyte monitor with multi-point self-calibration
US20080312518A1 (en) * 2007-06-14 2008-12-18 Arkal Medical, Inc On-demand analyte monitor and method of use
US20090099427A1 (en) * 2007-10-12 2009-04-16 Arkal Medical, Inc. Microneedle array with diverse needle configurations
CN102129167B (zh) * 2010-01-12 2015-10-14 中芯国际集成电路制造(上海)有限公司 光刻掩膜以及光刻方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3761264A (en) * 1971-10-12 1973-09-25 Rca Corp Method of defining a detailed pattern on a surface of a body
US3971860A (en) * 1973-05-07 1976-07-27 International Business Machines Corporation Method for making device for high resolution electron beam fabrication
NL7309451A (nl) * 1973-07-06 1975-01-08 Philips Nv Werkwijze voor het vervaardigen van een inrichting.
US3982943A (en) * 1974-03-05 1976-09-28 Ibm Corporation Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask
US4004044A (en) * 1975-05-09 1977-01-18 International Business Machines Corporation Method for forming patterned films utilizing a transparent lift-off mask
US4018938A (en) * 1975-06-30 1977-04-19 International Business Machines Corporation Fabrication of high aspect ratio masks
US4022927A (en) * 1975-06-30 1977-05-10 International Business Machines Corporation Methods for forming thick self-supporting masks
JPS5218320A (en) * 1975-08-04 1977-02-10 Hitachi Ltd Image forming method
US4024293A (en) * 1975-12-10 1977-05-17 International Business Machines Corporation High sensitivity resist system for lift-off metallization

Also Published As

Publication number Publication date
JPS5430827A (en) 1979-03-07
US4165395A (en) 1979-08-21
EP0001030B1 (de) 1982-05-19
EP0001030A1 (de) 1979-03-07
JPS6055825B2 (ja) 1985-12-06

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee