DE2861465D1 - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
DE2861465D1
DE2861465D1 DE7878100461T DE2861465T DE2861465D1 DE 2861465 D1 DE2861465 D1 DE 2861465D1 DE 7878100461 T DE7878100461 T DE 7878100461T DE 2861465 T DE2861465 T DE 2861465T DE 2861465 D1 DE2861465 D1 DE 2861465D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE7878100461T
Other languages
English (en)
Inventor
Michiharu Nakamura
Shigeo Yamashita
Takao Kuroda
Junichi Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP9136877A external-priority patent/JPS5427385A/ja
Priority claimed from JP3691278U external-priority patent/JPS54141881U/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE2861465D1 publication Critical patent/DE2861465D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE7878100461T 1977-08-01 1978-07-20 Semiconductor laser device Expired DE2861465D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9136877A JPS5427385A (en) 1977-08-01 1977-08-01 Semiconductor laser
JP3691278U JPS54141881U (de) 1978-03-24 1978-03-24

Publications (1)

Publication Number Publication Date
DE2861465D1 true DE2861465D1 (en) 1982-02-18

Family

ID=26376009

Family Applications (1)

Application Number Title Priority Date Filing Date
DE7878100461T Expired DE2861465D1 (en) 1977-08-01 1978-07-20 Semiconductor laser device

Country Status (4)

Country Link
US (1) US4257011A (de)
EP (1) EP0000557B1 (de)
CA (1) CA1105598A (de)
DE (1) DE2861465D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5522807A (en) * 1978-06-30 1980-02-18 Hitachi Ltd Semiconductor laser element and manufacturing of the same
US4302729A (en) * 1979-05-15 1981-11-24 Xerox Corporation Channeled substrate laser with distributed feedback
US4342148A (en) * 1981-02-04 1982-08-03 Northern Telecom Limited Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy
US4400813A (en) * 1981-07-20 1983-08-23 Bell Telephone Laboratories, Incorporated Crenelated-ridge waveguide laser
JPS5878487A (ja) * 1981-10-29 1983-05-12 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
US4573163A (en) * 1982-09-13 1986-02-25 At&T Bell Laboratories Longitudinal mode stabilized laser
JPS59205787A (ja) * 1983-05-09 1984-11-21 Nec Corp 単一軸モ−ド半導体レ−ザ
US4606605A (en) * 1984-06-29 1986-08-19 At&T Bell Laboratories Optical fiber having in-line polarization filter
DE3580738D1 (de) * 1984-10-03 1991-01-10 Siemens Ag Verfahren zur integrierten herstellung eines dfb-lasers mit angekoppeltem streifenwellenleiter auf einem substrat.
JPS6189690A (ja) * 1984-10-09 1986-05-07 Fujitsu Ltd 半導体レ−ザ
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
US4633476A (en) * 1984-11-16 1986-12-30 Spectra Diode Laboratories, Inc. Semiconductor laser with internal reflectors and vertical output
US4777148A (en) * 1985-01-30 1988-10-11 Massachusetts Institute Of Technology Process for making a mesa GaInAsP/InP distributed feedback laser
US4722092A (en) * 1985-01-30 1988-01-26 Massachusetts Institute Of Technology GaInAsP/InP distributed feedback laser
US4691320A (en) * 1985-03-11 1987-09-01 Rca Corporation Semiconductor structure and devices
US4652333A (en) * 1985-06-19 1987-03-24 Honeywell Inc. Etch process monitors for buried heterostructures
GB8703743D0 (en) * 1987-02-18 1987-03-25 British Telecomm Semiconductor laser structures
JPS63258090A (ja) * 1987-04-15 1988-10-25 Sharp Corp 半導体レ−ザ装置
DE3809609A1 (de) * 1988-03-22 1989-10-05 Siemens Ag Laserdiode zur erzeugung streng monochromatischer laserstrahlung
US5170405A (en) * 1991-02-06 1992-12-08 Eastman Kodak Company Semiconductor diode laser having smaller beam divergence
US5295150A (en) * 1992-12-11 1994-03-15 Eastman Kodak Company Distributed feedback-channeled substrate planar semiconductor laser
US5901168A (en) * 1997-05-07 1999-05-04 Lucent Technologies Inc. Article comprising an improved QC laser
US7457338B2 (en) * 2006-04-19 2008-11-25 Wisconsin Alumni Research Foundation Quantum well lasers with strained quantum wells and dilute nitride barriers
US7542503B2 (en) * 2006-10-06 2009-06-02 Applied Optoelectronics, Inc. Distributed feedback laser with improved optical field uniformity and mode stability

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4023993A (en) * 1974-08-22 1977-05-17 Xerox Corporation Method of making an electrically pumped solid-state distributed feedback laser
JPS51146196A (en) * 1975-06-11 1976-12-15 Hitachi Ltd Diode laser
US3978428A (en) * 1975-06-23 1976-08-31 Xerox Corporation Buried-heterostructure diode injection laser
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device

Also Published As

Publication number Publication date
US4257011A (en) 1981-03-17
EP0000557B1 (de) 1981-12-30
EP0000557A1 (de) 1979-02-07
CA1105598A (en) 1981-07-21

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