DE2808620A1 - Optoelektronischer sensor mit ueberlaufvorrichtung - Google Patents
Optoelektronischer sensor mit ueberlaufvorrichtungInfo
- Publication number
- DE2808620A1 DE2808620A1 DE19782808620 DE2808620A DE2808620A1 DE 2808620 A1 DE2808620 A1 DE 2808620A1 DE 19782808620 DE19782808620 DE 19782808620 DE 2808620 A DE2808620 A DE 2808620A DE 2808620 A1 DE2808620 A1 DE 2808620A1
- Authority
- DE
- Germany
- Prior art keywords
- overflow
- electrodes
- sensor
- electrode
- channels
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 7
- 239000000463 material Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000003990 capacitor Substances 0.000 claims abstract description 17
- 238000006073 displacement reaction Methods 0.000 claims abstract description 9
- 239000002800 charge carrier Substances 0.000 claims abstract description 6
- 239000002245 particle Substances 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 2
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19782808620 DE2808620A1 (de) | 1978-02-28 | 1978-02-28 | Optoelektronischer sensor mit ueberlaufvorrichtung |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19782808620 DE2808620A1 (de) | 1978-02-28 | 1978-02-28 | Optoelektronischer sensor mit ueberlaufvorrichtung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2808620A1 true DE2808620A1 (de) | 1979-08-30 |
| DE2808620C2 DE2808620C2 (enrdf_load_stackoverflow) | 1988-09-01 |
Family
ID=6033172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19782808620 Granted DE2808620A1 (de) | 1978-02-28 | 1978-02-28 | Optoelektronischer sensor mit ueberlaufvorrichtung |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2808620A1 (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3215325A1 (de) * | 1981-04-27 | 1982-11-18 | Sony Corp., Tokyo | Festkoerper-bildsensor |
| FR2506078A1 (fr) * | 1981-05-12 | 1982-11-19 | Thomson Csf | Dispositif anti-eblouissement pour dispositif photosensible a transfert de charge |
| FR2529390A1 (fr) * | 1982-06-29 | 1983-12-30 | Thomson Csf | Dispositif anti-eblouissement pour dispositif photosensible a transfert de charge |
-
1978
- 1978-02-28 DE DE19782808620 patent/DE2808620A1/de active Granted
Non-Patent Citations (3)
| Title |
|---|
| Charge Transfer Devices, Carlo H. SEquin, New York, (1975), p. 152-165 * |
| Charge Transfer Devices, Carlo H. Séquin, New York, (1975), p. 152-165 |
| RCA Review, Bd. 35, März 1974, p. 3-24 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3215325A1 (de) * | 1981-04-27 | 1982-11-18 | Sony Corp., Tokyo | Festkoerper-bildsensor |
| FR2506078A1 (fr) * | 1981-05-12 | 1982-11-19 | Thomson Csf | Dispositif anti-eblouissement pour dispositif photosensible a transfert de charge |
| EP0066480A1 (fr) * | 1981-05-12 | 1982-12-08 | Thomson-Csf | Dispositif anti-éblouissement pour dispositif photosensible à transfert de charge |
| FR2529390A1 (fr) * | 1982-06-29 | 1983-12-30 | Thomson Csf | Dispositif anti-eblouissement pour dispositif photosensible a transfert de charge |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2808620C2 (enrdf_load_stackoverflow) | 1988-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3227826C2 (enrdf_load_stackoverflow) | ||
| DE3104489C2 (enrdf_load_stackoverflow) | ||
| DE68917242T2 (de) | Festkörperbildsensor. | |
| DE2745046C3 (de) | Festkörper-Bildaufnahmeeinrichtung | |
| DE69033565T2 (de) | Bildfächensensor vom Interline-Transfer-Typ mit einer Elektrodenstruktur für jeden Pixel | |
| DE2759086C2 (enrdf_load_stackoverflow) | ||
| DE4010885C2 (enrdf_load_stackoverflow) | ||
| EP0007384B1 (de) | Eindimensionaler CCD-Sensor mit Überlaufvorrichtung | |
| DE2741226B2 (de) | Festkörper-Farbbildaufnahmeeinrichtung | |
| DE2553203A1 (de) | Festkoerper-bildabtaster mit zerstoerungsfreiem, wahlfreiem zugriff | |
| DE69330922T2 (de) | Bildsensor und Herstellungsverfahren | |
| DE19737772A1 (de) | Bipolargestützte aktive Pixelsensorzelle | |
| DE2804466C3 (de) | Festkörper-Bildaufnahmeeinrichtung | |
| DE2200455C3 (de) | Ladungsgekoppelte Halbleiterschaltung | |
| DE69030164T2 (de) | Festkörper-Bildaufnahmevorrichtung und deren Herstellungsmethode | |
| AT393181B (de) | Bildaufnahmeanordnung | |
| DE2334116A1 (de) | Ueberstroemkanal fuer ladungsuebertragende abbildungs-baueinheiten | |
| DE2808620C2 (enrdf_load_stackoverflow) | ||
| DE69327608T2 (de) | Ladungübertragungsbildsensor | |
| DE2445490A1 (de) | Ladungskopplungs-abbildungssystem | |
| DE3519077A1 (de) | Festkoerper-bildsensor | |
| DE2630388C3 (de) | Ladungsgekoppeltes Halbleiterbauelement, Verfahren zu seinem Betrieb und Verwendung | |
| DE4203837C2 (de) | CCD-Bildsensor mit verbessertem Speicher- und Transferwirkungsgrad | |
| EP0003213B1 (de) | Optoelektronischer Sensor nach dem Prinzip der Ladungsinjektion und Verfahren zu seiner Herstellung | |
| DE2952159A1 (de) | Ir-bildaufnahmeeinrichtung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: H01L 27/14 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |