DE2755500A1 - Solarzelle und verfahren zu ihrer herstellung - Google Patents
Solarzelle und verfahren zu ihrer herstellungInfo
- Publication number
- DE2755500A1 DE2755500A1 DE19772755500 DE2755500A DE2755500A1 DE 2755500 A1 DE2755500 A1 DE 2755500A1 DE 19772755500 DE19772755500 DE 19772755500 DE 2755500 A DE2755500 A DE 2755500A DE 2755500 A1 DE2755500 A1 DE 2755500A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- substrate
- ions
- solar cell
- contacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000463 material Substances 0.000 claims description 67
- 150000002500 ions Chemical class 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 41
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 41
- 238000002513 implantation Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 31
- 238000000576 coating method Methods 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 27
- 238000010884 ion-beam technique Methods 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 230000035515 penetration Effects 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000007943 implant Substances 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 230000003667 anti-reflective effect Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000000889 atomisation Methods 0.000 claims description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 239000010408 film Substances 0.000 claims 1
- 238000009408 flooring Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 67
- 210000004027 cell Anatomy 0.000 description 51
- 239000006117 anti-reflective coating Substances 0.000 description 46
- 230000008569 process Effects 0.000 description 18
- 230000007704 transition Effects 0.000 description 17
- 238000009826 distribution Methods 0.000 description 14
- 229910052796 boron Inorganic materials 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052794 bromium Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- -1 boron ions Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000018199 S phase Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 125000001246 bromo group Chemical group Br* 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000012432 intermediate storage Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 210000001331 nose Anatomy 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/033—Diffusion of aluminum
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/153—Solar cells-implantations-laser beam
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/749,776 US4086102A (en) | 1976-12-13 | 1976-12-13 | Inexpensive solar cell and method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2755500A1 true DE2755500A1 (de) | 1978-06-15 |
Family
ID=25015143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772755500 Ceased DE2755500A1 (de) | 1976-12-13 | 1977-12-13 | Solarzelle und verfahren zu ihrer herstellung |
Country Status (5)
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4149665A (en) * | 1977-11-04 | 1979-04-17 | Nasa | Bonding machine for forming a solar array strip |
| DE2909956A1 (de) * | 1979-03-14 | 1980-09-18 | Licentia Gmbh | Halbleiter-glas-verbundwerkstoff |
| US4268711A (en) * | 1979-04-26 | 1981-05-19 | Optical Coating Laboratory, Inc. | Method and apparatus for forming films from vapors using a contained plasma source |
| US4273950A (en) * | 1979-05-29 | 1981-06-16 | Photowatt International, Inc. | Solar cell and fabrication thereof using microwaves |
| FR2507822A1 (fr) * | 1979-05-29 | 1982-12-17 | Photowatt International | Procede de fabrication de cellules solaires et cellules solaires correspondantes |
| DE2944185A1 (de) * | 1979-11-02 | 1981-05-07 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Solarzelle |
| US4431459A (en) * | 1981-07-17 | 1984-02-14 | National Semiconductor Corporation | Fabrication of MOSFETs by laser annealing through anti-reflective coating |
| JPS5934675A (ja) * | 1982-08-23 | 1984-02-25 | Hitachi Ltd | 受光素子 |
| US5427629A (en) * | 1983-07-11 | 1995-06-27 | The United States Of America As Represented By The Secretary Of The Air Force | Coverplate for silicon solar cells |
| WO1985002942A1 (en) * | 1983-12-19 | 1985-07-04 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
| US4612698A (en) * | 1984-10-31 | 1986-09-23 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
| NL8420337A (nl) * | 1983-12-19 | 1985-11-01 | Mobil Solar Energy Corp | Werkwijze voor het vervaardigen van zonnecellen. |
| US4557037A (en) * | 1984-10-31 | 1985-12-10 | Mobil Solar Energy Corporation | Method of fabricating solar cells |
| US4592129A (en) * | 1985-04-01 | 1986-06-03 | Motorola, Inc. | Method of making an integral, multiple layer antireflection coating by hydrogen ion implantation |
| US4818337A (en) * | 1986-04-11 | 1989-04-04 | University Of Delaware | Thin active-layer solar cell with multiple internal reflections |
| WO2007119673A1 (ja) * | 2006-04-14 | 2007-10-25 | Sharp Kabushiki Kaisha | 太陽電池、該太陽電池を用いた太陽電池モジュール、及び、該太陽電池モジュールの製造方法 |
| US7820460B2 (en) * | 2007-09-07 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Patterned assembly for manufacturing a solar cell and a method thereof |
| US20090227061A1 (en) * | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Establishing a high phosphorus concentration in solar cells |
| US8461032B2 (en) * | 2008-03-05 | 2013-06-11 | Varian Semiconductor Equipment Associates, Inc. | Use of dopants with different diffusivities for solar cell manufacture |
| US7727866B2 (en) * | 2008-03-05 | 2010-06-01 | Varian Semiconductor Equipment Associates, Inc. | Use of chained implants in solar cells |
| US20090227095A1 (en) * | 2008-03-05 | 2009-09-10 | Nicholas Bateman | Counterdoping for solar cells |
| WO2009152368A1 (en) | 2008-06-11 | 2009-12-17 | Solar Implant Technologies Inc. | Application specific implant system and method for use in solar cell fabrications |
| US7927986B2 (en) * | 2008-07-22 | 2011-04-19 | Varian Semiconductor Equipment Associates, Inc. | Ion implantation with heavy halogenide compounds |
| US20100048018A1 (en) * | 2008-08-25 | 2010-02-25 | Varian Semiconductor Equipment Associates, Inc. | Doped Layers for Reducing Electromigration |
| US8202789B2 (en) * | 2008-09-10 | 2012-06-19 | Varian Semiconductor Equipment Associates, Inc. | Implanting a solar cell substrate using a mask |
| US8354653B2 (en) * | 2008-09-10 | 2013-01-15 | Varian Semiconductor Equipment Associates, Inc. | Techniques for manufacturing solar cells |
| EP2409331A4 (en) * | 2009-03-20 | 2017-06-28 | Intevac, Inc. | Advanced high efficiency crystalline solar cell fabrication method |
| US9076914B2 (en) * | 2009-04-08 | 2015-07-07 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
| US9006688B2 (en) * | 2009-04-08 | 2015-04-14 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate using a mask |
| US8900982B2 (en) * | 2009-04-08 | 2014-12-02 | Varian Semiconductor Equipment Associates, Inc. | Techniques for processing a substrate |
| US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| US20110180131A1 (en) * | 2010-01-27 | 2011-07-28 | Varian Semiconductor Equipment Associates, Inc. | Method for attaching contacts to a solar cell without cell efficiency loss |
| US8216923B2 (en) | 2010-10-01 | 2012-07-10 | Varian Semiconductor Equipment Associates, Inc. | Integrated shadow mask/carrier for patterned ion implantation |
| WO2013000026A1 (en) * | 2011-06-30 | 2013-01-03 | Newsouth Innovations Pty Limited | Dielectric structures in solar cells |
| MY175007A (en) | 2011-11-08 | 2020-06-02 | Intevac Inc | Substrate processing system and method |
| WO2014100506A1 (en) | 2012-12-19 | 2014-06-26 | Intevac, Inc. | Grid for plasma ion implant |
| US9401450B2 (en) | 2013-12-09 | 2016-07-26 | Sunpower Corporation | Solar cell emitter region fabrication using ion implantation |
| US9577134B2 (en) | 2013-12-09 | 2017-02-21 | Sunpower Corporation | Solar cell emitter region fabrication using self-aligned implant and cap |
| US9263625B2 (en) | 2014-06-30 | 2016-02-16 | Sunpower Corporation | Solar cell emitter region fabrication using ion implantation |
| US20160284913A1 (en) | 2015-03-27 | 2016-09-29 | Staffan WESTERBERG | Solar cell emitter region fabrication using substrate-level ion implantation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3539883A (en) * | 1967-03-15 | 1970-11-10 | Ion Physics Corp | Antireflection coatings for semiconductor devices |
| DE2022896A1 (de) * | 1970-05-11 | 1971-11-25 | Siemens Ag | Verfahren zur Reflexionsminderung von lichtempfindlichen Silicium-Planarhalbleiterbauelementen |
| US3956765A (en) * | 1972-11-03 | 1976-05-11 | Licentia Patent-Verwaltungs-G.M.B.H. | Integrated semiconductor arrangement |
| US3990097A (en) * | 1975-09-18 | 1976-11-02 | Solarex Corporation | Silicon solar energy cell having improved back contact and method forming same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3091555A (en) * | 1960-09-08 | 1963-05-28 | Texas Instruments Inc | Method for forming low reflectance coatings of critical thickness on silicon solar energy converters |
| US3361594A (en) * | 1964-01-02 | 1968-01-02 | Globe Union Inc | Solar cell and process for making the same |
| US3533850A (en) * | 1965-10-13 | 1970-10-13 | Westinghouse Electric Corp | Antireflective coatings for solar cells |
| US3496029A (en) * | 1966-10-12 | 1970-02-17 | Ion Physics Corp | Process of doping semiconductor with analyzing magnet |
| US3859717A (en) * | 1970-12-21 | 1975-01-14 | Rockwell International Corp | Method of manufacturing control electrodes for charge coupled circuits and the like |
| US3798752A (en) * | 1971-03-11 | 1974-03-26 | Nippon Electric Co | Method of producing a silicon gate insulated-gate field effect transistor |
| FR2257145B1 (US07223432-20070529-C00017.png) * | 1974-01-04 | 1976-11-26 | Commissariat Energie Atomique | |
| JPS51890A (en) * | 1974-06-20 | 1976-01-07 | Shunpei Yamazaki | Handotaisochi oyobi sonosakuseihoho |
| JPS5824951B2 (ja) * | 1974-10-09 | 1983-05-24 | ソニー株式会社 | コウガクソウチ |
| JPS5143090A (US07223432-20070529-C00017.png) * | 1974-10-09 | 1976-04-13 | Sony Corp |
-
1976
- 1976-12-13 US US05/749,776 patent/US4086102A/en not_active Expired - Lifetime
-
1977
- 1977-12-08 GB GB23430/80A patent/GB1597384A/en not_active Expired
- 1977-12-08 GB GB51156/77A patent/GB1597383A/en not_active Expired
- 1977-12-13 JP JP14979177A patent/JPS5391687A/ja active Pending
- 1977-12-13 FR FR7737480A patent/FR2373882A1/fr active Granted
- 1977-12-13 DE DE19772755500 patent/DE2755500A1/de not_active Ceased
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3539883A (en) * | 1967-03-15 | 1970-11-10 | Ion Physics Corp | Antireflection coatings for semiconductor devices |
| DE2022896A1 (de) * | 1970-05-11 | 1971-11-25 | Siemens Ag | Verfahren zur Reflexionsminderung von lichtempfindlichen Silicium-Planarhalbleiterbauelementen |
| US3956765A (en) * | 1972-11-03 | 1976-05-11 | Licentia Patent-Verwaltungs-G.M.B.H. | Integrated semiconductor arrangement |
| US3990097A (en) * | 1975-09-18 | 1976-11-02 | Solarex Corporation | Silicon solar energy cell having improved back contact and method forming same |
Non-Patent Citations (4)
| Title |
|---|
| JP-Z.: Jap. J. Appl. Physics, Bd. 15, Dez. 1976, S. 2427-2432 * |
| US-Buch: 11th Photovoltaic Specialists Conf., Phoenix, USA, Conference Record 1975, S. 342-347 * |
| US-Z.: Appl. Optics, Bd. 15, Juni 1976, S. 1621-1625 * |
| US-Z.: J. Vac. Sci. Technol., Bd. 12, Sept./Okt. 1975, S. 1023-1030 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5391687A (en) | 1978-08-11 |
| GB1597383A (en) | 1981-09-09 |
| FR2373882A1 (fr) | 1978-07-07 |
| US4086102A (en) | 1978-04-25 |
| FR2373882B1 (US07223432-20070529-C00017.png) | 1983-03-25 |
| GB1597384A (en) | 1981-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2755500A1 (de) | Solarzelle und verfahren zu ihrer herstellung | |
| EP0468094B1 (de) | Verfahren zur Herstellung einer Chalkopyrit-Solarzelle | |
| DE3780386T2 (de) | Umwandlungsverfahren zur passivierung von kurzschlusswegen in halbleitervorrichtungen und so hergestellte anordnungen. | |
| DE19912961B4 (de) | Halbleiterdünnfilm, Herstellungsverfahren dafür, sowie den Halbleiterdünnfilm aufweisende Solarzelle | |
| DE2632987C3 (de) | Fotovoltaisches Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| DE102011050089B4 (de) | Verfahren zum Herstellen von elektrischen Kontakten an einer Solarzelle, Solarzelle und Verfahren zum Herstellen eines Rückseiten-Kontaktes einer Solarzelle | |
| DE2917564A1 (de) | Verfahren zum herstellen von solarzellen und dadurch hergestellte gegenstaende | |
| DE102004062914A1 (de) | Fotovoltaisches Umwandlungsbauteil und Verfahren zum Herstellen des Bauteils | |
| DE3015706A1 (de) | Solarzelle mit schottky-sperrschicht | |
| DE102013219561A1 (de) | Verfahren zum Herstellen einer photovoltaischen Solarzelle mit zumindest einem Heteroübergang | |
| DE112012003057T5 (de) | Verfahren zum Stabilisieren von hydriertem, amorphem Silicium und amorphen, hydrierten Siliciumlegierungen | |
| DE10151415A1 (de) | Solarzelle | |
| DE102008030880A1 (de) | Rückkontaktsolarzelle mit großflächigen Rückseiten-Emitterbereichen und Herstellungsverfahren hierfür | |
| DE212021000262U1 (de) | Vergrabene Solarzelle mit einem selektiven Kontaktbereich und zugehörige Rückseitenkontaktstruktur | |
| DE2711365A1 (de) | Halbleiteranordnung mit schottky- grenzschicht | |
| DE68917696T2 (de) | Verfahren zur herstellung eines infrarotphotodetektors. | |
| DE3015362C2 (US07223432-20070529-C00017.png) | ||
| DE2846096A1 (de) | Solarzelle aus halbleitermaterial | |
| DE3122771A1 (de) | "verfahren zur herstellung von sonnenzellen" | |
| DE2448478A1 (de) | Verfahren zum herstellen von pn-halbleiteruebergaengen | |
| DE102011115581B4 (de) | Verfahren zur Herstellung einer Solarzelle | |
| DE2812547C2 (US07223432-20070529-C00017.png) | ||
| DE4033658A1 (de) | Verfahren zur bearbeitung von grabenflanken in halbleitersubstraten | |
| DE102012104616B4 (de) | Verfahren zum Bilden einer Fensterschicht in einer Dünnschicht-Photovoltaikvorrichtung auf Cadmiumtelluridbasis | |
| DE2950085C2 (US07223432-20070529-C00017.png) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8131 | Rejection |