DE2743879C2 - - Google Patents
Info
- Publication number
- DE2743879C2 DE2743879C2 DE2743879A DE2743879A DE2743879C2 DE 2743879 C2 DE2743879 C2 DE 2743879C2 DE 2743879 A DE2743879 A DE 2743879A DE 2743879 A DE2743879 A DE 2743879A DE 2743879 C2 DE2743879 C2 DE 2743879C2
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor layer
- drive line
- voltage
- line
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000003990 capacitor Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 239000012799 electrically-conductive coating Substances 0.000 claims description 2
- 230000004913 activation Effects 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 description 8
- 230000005684 electric field Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772743879 DE2743879A1 (de) | 1977-09-29 | 1977-09-29 | Dynamisches halbleiter-speicherelement mit zwei ansteuerleitungen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772743879 DE2743879A1 (de) | 1977-09-29 | 1977-09-29 | Dynamisches halbleiter-speicherelement mit zwei ansteuerleitungen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2743879A1 DE2743879A1 (de) | 1979-04-12 |
| DE2743879C2 true DE2743879C2 (enrdf_load_stackoverflow) | 1989-03-30 |
Family
ID=6020231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772743879 Granted DE2743879A1 (de) | 1977-09-29 | 1977-09-29 | Dynamisches halbleiter-speicherelement mit zwei ansteuerleitungen |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2743879A1 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2855079A1 (de) * | 1978-12-20 | 1980-07-17 | Siemens Ag | Halbleiter-speicherschaltung |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3676715A (en) * | 1970-06-26 | 1972-07-11 | Bell Telephone Labor Inc | Semiconductor apparatus for image sensing and dynamic storage |
-
1977
- 1977-09-29 DE DE19772743879 patent/DE2743879A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2743879A1 (de) | 1979-04-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAM | Search report available | ||
| OC | Search report available | ||
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: G11C 11/24 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |