DE2722064C2 - Lichtzündbarer Thyristor - Google Patents
Lichtzündbarer ThyristorInfo
- Publication number
- DE2722064C2 DE2722064C2 DE19772722064 DE2722064A DE2722064C2 DE 2722064 C2 DE2722064 C2 DE 2722064C2 DE 19772722064 DE19772722064 DE 19772722064 DE 2722064 A DE2722064 A DE 2722064A DE 2722064 C2 DE2722064 C2 DE 2722064C2
- Authority
- DE
- Germany
- Prior art keywords
- zone
- thyristor
- border
- highly doped
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001960 triggered effect Effects 0.000 title description 3
- 238000001465 metallisation Methods 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/102—Cathode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH468077A CH614811A5 (en) | 1977-04-15 | 1977-04-15 | Thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2722064A1 DE2722064A1 (de) | 1978-10-19 |
| DE2722064C2 true DE2722064C2 (de) | 1987-04-23 |
Family
ID=4280608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772722064 Expired DE2722064C2 (de) | 1977-04-15 | 1977-05-16 | Lichtzündbarer Thyristor |
Country Status (2)
| Country | Link |
|---|---|
| CH (1) | CH614811A5 (US06373033-20020416-M00035.png) |
| DE (1) | DE2722064C2 (US06373033-20020416-M00035.png) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2830735C2 (de) * | 1978-07-13 | 1982-11-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristortriode mit integriertem Hilfsthyristor und Verfahren zu ihrer Herstellung |
| CH634442A5 (de) * | 1978-11-15 | 1983-01-31 | Bbc Brown Boveri & Cie | Lichtzuendbarer thyristor. |
| DE2853292A1 (de) * | 1978-11-24 | 1980-06-12 | Bbc Brown Boveri & Cie | Optisch aktivierbares halbleiterbauelement |
| JPS5994869A (ja) * | 1982-11-24 | 1984-05-31 | Toshiba Corp | 光点弧形双方向サイリスタ |
| IT1212799B (it) * | 1983-12-15 | 1989-11-30 | Ates Componenti Elettron | Dispositivo elettronico ad interruttore comandato per la soppressione di transitori. |
| DE3446789A1 (de) * | 1984-12-21 | 1986-07-03 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Verfahren zum herstellen von halbleiterbauelementen |
| FR2586141B1 (fr) * | 1985-08-06 | 1987-11-20 | Thomson Csf | Thyristor sensible a decouplage gachette-cathode integre |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH567803A5 (US06373033-20020416-M00035.png) * | 1974-01-18 | 1975-10-15 | Bbc Brown Boveri & Cie | |
| DE2538549C2 (de) * | 1975-08-29 | 1985-06-13 | Siemens AG, 1000 Berlin und 8000 München | Mit Licht steuerbarer Thyristor |
-
1977
- 1977-04-15 CH CH468077A patent/CH614811A5/xx not_active IP Right Cessation
- 1977-05-16 DE DE19772722064 patent/DE2722064C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2722064A1 (de) | 1978-10-19 |
| CH614811A5 (en) | 1979-12-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2947669C2 (de) | Optisch zündbarer planarer PNPN-Halbleiterschalter | |
| DE3011484C2 (de) | Optisch steuerbare Halbleitervorrichtung | |
| DE2257846B2 (de) | Integrierte Halbleiteranordnung zum Schutz gegen Überspannung | |
| DE2712114C2 (de) | Schaltbare Halbleitervorrichtung und Verfahren zu ihrer Herstellung | |
| DE2511281C2 (de) | Fotothyristor | |
| DE2722064C2 (de) | Lichtzündbarer Thyristor | |
| DE2945347C2 (US06373033-20020416-M00035.png) | ||
| EP0029163B1 (de) | Lichtzündbarer Thyristor und Verfahren zu seinem Betrieb | |
| DE2021160A1 (de) | Halbleiterschaltvorrichtung | |
| EP0049445A2 (de) | Selbstzündender Thyristor | |
| DE2238564A1 (de) | Thyristor | |
| DE2009431C2 (de) | Feldeffekttransistor mit isolierter Gate-Elektrode und mit einer Schutzdiode sowie Schaltungsanordnung mit einem solchen Feldeffekttransistor | |
| DE2809564C3 (de) | Steuerbarer Halbleitergleichrichter | |
| DE4439012A1 (de) | Zweirichtungsthyristor | |
| DE4105646C2 (de) | Verfahren zum Herstellen eines optisch triggerbaren lateralen Thyristors | |
| EP0156022B1 (de) | Durch Feldeffekt steuerbares Halbleiterbauelement | |
| DE19727676A1 (de) | MOS gesteuertes Leistungshalbleiterbauelement | |
| DE4135258C2 (de) | Schnelle Leistungsdiode | |
| EP0173275B1 (de) | Lichtzündbarer Thyristor | |
| WO1999009597A1 (de) | Hochspannungsbauelement und verfahren zu seiner herstellung | |
| DE1919406C3 (de) | Feldeffekttransistor und seine Verwendung in einer Schaltungsanordnung für einen Miller-Integrator | |
| DE2746406A1 (de) | Thyristor mit hoher gatt-empfindlichkeit und hohem dv/dt-wert | |
| DE2237086C3 (de) | Steuerbares Halbleitergleichrichterbauelement | |
| DE2628792C2 (de) | Lichtzündbarer Thyristor | |
| EP0007099B1 (de) | Thyristor mit Amplifying Gate und Verfahren zur Herstellung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: H01L 31/10 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: BBC BROWN BOVERI AG, BADEN, AARGAU, CH |
|
| 8328 | Change in the person/name/address of the agent |
Free format text: DERZEIT KEIN VERTRETER BESTELLT |
|
| 8339 | Ceased/non-payment of the annual fee |