DE2658400A1 - Verfahren zur herstellung einer negativen maske auf einem substrat - Google Patents
Verfahren zur herstellung einer negativen maske auf einem substratInfo
- Publication number
- DE2658400A1 DE2658400A1 DE19762658400 DE2658400A DE2658400A1 DE 2658400 A1 DE2658400 A1 DE 2658400A1 DE 19762658400 DE19762658400 DE 19762658400 DE 2658400 A DE2658400 A DE 2658400A DE 2658400 A1 DE2658400 A1 DE 2658400A1
- Authority
- DE
- Germany
- Prior art keywords
- mask
- substrate
- metal
- photoresist
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 claims description 44
- 229920002120 photoresistant polymer Polymers 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 2
- 239000012286 potassium permanganate Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- FHIVAFMUCKRCQO-UHFFFAOYSA-N diazinon Chemical compound CCOP(=S)(OCC)OC1=CC(C)=NC(C(C)C)=N1 FHIVAFMUCKRCQO-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 description 1
- 229910000397 disodium phosphate Inorganic materials 0.000 description 1
- 235000019800 disodium phosphate Nutrition 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762658400 DE2658400A1 (de) | 1976-12-23 | 1976-12-23 | Verfahren zur herstellung einer negativen maske auf einem substrat |
| US05/846,741 US4174219A (en) | 1976-12-23 | 1977-10-31 | Method of making a negative exposure mask |
| FR7735131A FR2375627A1 (fr) | 1976-12-23 | 1977-11-18 | Procede de realisation d'un masque negatif sur un substrat |
| GB48391/77A GB1537634A (en) | 1976-12-23 | 1977-11-21 | Method of making a negative mask on a substrate |
| JP15071277A JPS5379466A (en) | 1976-12-23 | 1977-12-16 | Method of forming negative mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762658400 DE2658400A1 (de) | 1976-12-23 | 1976-12-23 | Verfahren zur herstellung einer negativen maske auf einem substrat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2658400A1 true DE2658400A1 (de) | 1978-06-29 |
Family
ID=5996378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762658400 Withdrawn DE2658400A1 (de) | 1976-12-23 | 1976-12-23 | Verfahren zur herstellung einer negativen maske auf einem substrat |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4174219A (enExample) |
| JP (1) | JPS5379466A (enExample) |
| DE (1) | DE2658400A1 (enExample) |
| FR (1) | FR2375627A1 (enExample) |
| GB (1) | GB1537634A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4882262A (en) * | 1987-09-28 | 1989-11-21 | Honeywell Inc. | Self-aligning aperture |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4293624A (en) * | 1979-06-26 | 1981-10-06 | The Perkin-Elmer Corporation | Method for making a mask useful in X-ray lithography |
| DE2946235C3 (de) * | 1979-11-16 | 1982-04-08 | Dr. Johannes Heidenhain Gmbh, 8225 Traunreut | Verfahren zur Erzeugung einer Belichtungsmaske zur Herstellung von mattstreuenden Strukturen neben opaken und/oder transparenten Strukturen |
| US4423137A (en) * | 1980-10-28 | 1983-12-27 | Quixote Corporation | Contact printing and etching method of making high density recording medium |
| EP0057268A3 (en) * | 1981-02-02 | 1982-11-10 | International Business Machines Corporation | Method of fabricating x-ray lithographic masks |
| US4352835A (en) * | 1981-07-01 | 1982-10-05 | Western Electric Co., Inc. | Masking portions of a substrate |
| US4379833A (en) * | 1981-12-31 | 1983-04-12 | International Business Machines Corporation | Self-aligned photoresist process |
| US4391849A (en) * | 1982-04-12 | 1983-07-05 | Memorex Corporation | Metal oxide patterns with planar surface |
| US4496419A (en) * | 1983-02-28 | 1985-01-29 | Cornell Research Foundation, Inc. | Fine line patterning method for submicron devices |
| CA1270934A (en) * | 1985-03-20 | 1990-06-26 | Masataka Shirasaki | Spatial phase modulating masks and production processes thereof, and processes for the formation of phase-shifted diffraction gratings |
| DE3712335A1 (de) * | 1987-04-11 | 1988-10-20 | Vdo Schindling | Verfahren zur herstellung einer struktur |
| US4948706A (en) * | 1987-12-30 | 1990-08-14 | Hoya Corporation | Process for producing transparent substrate having thereon transparent conductive pattern elements separated by light-shielding insulating film, and process for producing surface-colored material |
| JPH0242761A (ja) * | 1988-04-20 | 1990-02-13 | Matsushita Electric Ind Co Ltd | アクティブマトリクス基板の製造方法 |
| GB8812235D0 (en) * | 1988-05-24 | 1988-06-29 | Jones B L | Manufacturing electronic devices |
| GB8825826D0 (en) * | 1988-11-04 | 1988-12-07 | Gen Electric Co Plc | Deposition processes |
| US5145554A (en) * | 1989-02-23 | 1992-09-08 | Seiko Epson Corporation | Method of anisotropic dry etching of thin film semiconductors |
| GB2230871A (en) * | 1989-04-11 | 1990-10-31 | Coates Brothers Plc | Making metal patterns. |
| GB9114018D0 (en) * | 1991-06-28 | 1991-08-14 | Philips Electronic Associated | Thin-film transistor manufacture |
| WO1994017449A1 (en) * | 1993-01-21 | 1994-08-04 | Sematech, Inc. | Phase shifting mask structure with multilayer optical coating for improved transmission |
| US5411824A (en) * | 1993-01-21 | 1995-05-02 | Sematech, Inc. | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging |
| US5418095A (en) * | 1993-01-21 | 1995-05-23 | Sematech, Inc. | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process |
| US5395740A (en) * | 1993-01-27 | 1995-03-07 | Motorola, Inc. | Method for fabricating electrode patterns |
| KR100288742B1 (ko) * | 1997-03-12 | 2001-05-02 | 윤종용 | 광도파로소자의제조방법 |
| JP2003101360A (ja) * | 2001-09-19 | 2003-04-04 | Murata Mfg Co Ltd | 弾性表面波素子の電極パターン形成方法 |
| US6749969B2 (en) | 2001-11-14 | 2004-06-15 | International Business Machines Corporation | Reverse tone process for masks |
| US20080213482A1 (en) * | 2007-03-01 | 2008-09-04 | Stephan Lvovich Logunov | Method of making a mask for sealing a glass package |
| US8129098B2 (en) * | 2007-11-20 | 2012-03-06 | Eastman Kodak Company | Colored mask combined with selective area deposition |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3712816A (en) * | 1967-11-13 | 1973-01-23 | Fairchild Camera Instr Co | Process for making hard surface transparent mask |
| US3615462A (en) * | 1968-11-06 | 1971-10-26 | Zenith Radio Corp | Processing black-surround screens |
| US3661580A (en) * | 1970-01-30 | 1972-05-09 | Rca Corp | Photographic method for producing a cathode-ray tube screen structure |
| US3669665A (en) * | 1971-02-18 | 1972-06-13 | Ibm | Process for making resist stencils from photographic stripping films and for using same |
| US3745094A (en) * | 1971-03-26 | 1973-07-10 | Ibm | Two resist method for printed circuit structure |
| US3878007A (en) * | 1971-11-18 | 1975-04-15 | Rca Corp | Method of depositing a pattern of metal plated areas on an insulating substrate |
| US4018938A (en) * | 1975-06-30 | 1977-04-19 | International Business Machines Corporation | Fabrication of high aspect ratio masks |
-
1976
- 1976-12-23 DE DE19762658400 patent/DE2658400A1/de not_active Withdrawn
-
1977
- 1977-10-31 US US05/846,741 patent/US4174219A/en not_active Expired - Lifetime
- 1977-11-18 FR FR7735131A patent/FR2375627A1/fr active Granted
- 1977-11-21 GB GB48391/77A patent/GB1537634A/en not_active Expired
- 1977-12-16 JP JP15071277A patent/JPS5379466A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4882262A (en) * | 1987-09-28 | 1989-11-21 | Honeywell Inc. | Self-aligning aperture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5379466A (en) | 1978-07-13 |
| FR2375627B1 (enExample) | 1980-08-22 |
| FR2375627A1 (fr) | 1978-07-21 |
| US4174219A (en) | 1979-11-13 |
| GB1537634A (en) | 1979-01-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |