DE2603908A1 - Verfahren zur herstellung eines aus mehreren zonen unterschiedlicher dotierungskonzentration bestehenden halbleiterbauelementes und lawinenlaufzeitdiode hergestellt nach diesem verfahren - Google Patents
Verfahren zur herstellung eines aus mehreren zonen unterschiedlicher dotierungskonzentration bestehenden halbleiterbauelementes und lawinenlaufzeitdiode hergestellt nach diesem verfahrenInfo
- Publication number
- DE2603908A1 DE2603908A1 DE2603908A DE2603908A DE2603908A1 DE 2603908 A1 DE2603908 A1 DE 2603908A1 DE 2603908 A DE2603908 A DE 2603908A DE 2603908 A DE2603908 A DE 2603908A DE 2603908 A1 DE2603908 A1 DE 2603908A1
- Authority
- DE
- Germany
- Prior art keywords
- zones
- zone
- diode
- semiconductor
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000012535 impurity Substances 0.000 title claims abstract description 22
- 230000007704 transition Effects 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000013078 crystal Substances 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims description 16
- 238000005496 tempering Methods 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 7
- 230000007547 defect Effects 0.000 claims description 4
- 239000007858 starting material Substances 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- JLHBAYXOERKFGV-UHFFFAOYSA-N bis(4-nitrophenyl) phenyl phosphate Chemical group C1=CC([N+](=O)[O-])=CC=C1OP(=O)(OC=1C=CC(=CC=1)[N+]([O-])=O)OC1=CC=CC=C1 JLHBAYXOERKFGV-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/40—Transit-time diodes, e.g. IMPATT or TRAPATT diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH15276A CH594287A5 (enrdf_load_stackoverflow) | 1976-01-08 | 1976-01-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2603908A1 true DE2603908A1 (de) | 1977-07-14 |
Family
ID=4180429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2603908A Withdrawn DE2603908A1 (de) | 1976-01-08 | 1976-02-02 | Verfahren zur herstellung eines aus mehreren zonen unterschiedlicher dotierungskonzentration bestehenden halbleiterbauelementes und lawinenlaufzeitdiode hergestellt nach diesem verfahren |
Country Status (2)
| Country | Link |
|---|---|
| CH (1) | CH594287A5 (enrdf_load_stackoverflow) |
| DE (1) | DE2603908A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4806497A (en) * | 1986-09-17 | 1989-02-21 | Bbc Brown Boveri Ag | Method for producing large-area power semiconductor components |
-
1976
- 1976-01-08 CH CH15276A patent/CH594287A5/xx not_active IP Right Cessation
- 1976-02-02 DE DE2603908A patent/DE2603908A1/de not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4806497A (en) * | 1986-09-17 | 1989-02-21 | Bbc Brown Boveri Ag | Method for producing large-area power semiconductor components |
| CH670332A5 (enrdf_load_stackoverflow) * | 1986-09-17 | 1989-05-31 | Bbc Brown Boveri & Cie |
Also Published As
| Publication number | Publication date |
|---|---|
| CH594287A5 (enrdf_load_stackoverflow) | 1978-01-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |