DE2553151C2 - - Google Patents

Info

Publication number
DE2553151C2
DE2553151C2 DE2553151A DE2553151A DE2553151C2 DE 2553151 C2 DE2553151 C2 DE 2553151C2 DE 2553151 A DE2553151 A DE 2553151A DE 2553151 A DE2553151 A DE 2553151A DE 2553151 C2 DE2553151 C2 DE 2553151C2
Authority
DE
Germany
Prior art keywords
transistor
region
layer
base
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2553151A
Other languages
German (de)
English (en)
Other versions
DE2553151A1 (de
Inventor
Susuma Tokio/Tokyp Jp Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13655074A external-priority patent/JPS5547463B2/ja
Priority claimed from JP49137239A external-priority patent/JPS5162685A/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2553151A1 publication Critical patent/DE2553151A1/de
Application granted granted Critical
Publication of DE2553151C2 publication Critical patent/DE2553151C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/643—Combinations of non-inverted vertical BJTs and inverted vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/652—Integrated injection logic using vertical injector structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

Landscapes

  • Bipolar Integrated Circuits (AREA)
DE19752553151 1974-11-26 1975-11-26 Halbleitervorrichtung Granted DE2553151A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13655074A JPS5547463B2 (https=) 1974-11-26 1974-11-26
JP49137239A JPS5162685A (https=) 1974-11-28 1974-11-28

Publications (2)

Publication Number Publication Date
DE2553151A1 DE2553151A1 (de) 1976-08-12
DE2553151C2 true DE2553151C2 (https=) 1988-05-26

Family

ID=26470091

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752553151 Granted DE2553151A1 (de) 1974-11-26 1975-11-26 Halbleitervorrichtung

Country Status (2)

Country Link
DE (1) DE2553151A1 (https=)
NL (1) NL7513827A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2373163A1 (fr) * 1976-12-03 1978-06-30 Thomson Csf Structure pour circuits logiques
GB9013926D0 (en) * 1990-06-22 1990-08-15 Gen Electric Co Plc A vertical pnp transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7107040A (https=) * 1971-05-22 1972-11-24

Also Published As

Publication number Publication date
NL7513827A (nl) 1976-05-31
DE2553151A1 (de) 1976-08-12

Similar Documents

Publication Publication Date Title
DE1152763C2 (de) Halbleiterbauelement mit mindestens einem PN-UEbergang
DE2262297C2 (de) Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau
DE2545368C2 (de) Monolithisch integrierte Schaltung mit einer Mehrzahl von I↑2↑L-Torschaltungen
DE2718696A1 (de) Halbleiterschalterkreis
DE1230500B (de) Steuerbares Halbleiterbauelement mit einem Halbleiterkoerper mit der Zonenfolge NN P oder PP N
DE2730373A1 (de) Integrierte halbleiter-logikschaltung
DE2364752A1 (de) Halbleitervorrichtung
DE2852200C2 (https=)
DE2344244A1 (de) Logische schaltung
DE2804500A1 (de) Halbleitervorrichtung
DE2634304A1 (de) Halbleitervorrichtung
DE2657293B2 (de) Elektrische Schaltungsanordnung in Transistor-Transistor-Logikschaltung (TTL)
DE2553151C2 (https=)
DE2033800A1 (de) Mehrfachemitter Transistor Aufbau und Schaltung
DE2418560A1 (de) Halbleitervorrichtung
DE1937853B2 (de) Integrierte Schaltung
DE2541887C3 (de) Monolithisch integrierte Halbleiterschaltung mit einer I2 L- Konfiguration
DE2433300A1 (de) Integrierte schaltungen
DE2946192C2 (de) Frequenzteiler
DE2444589A1 (de) Integrierte halbleiterschaltung
DE1207010B (de) Flaechentransistor mit einem Halbleiterkoerper mit vier Zonen abwechselnd entgegengesetzten Leitungstyps, Verfahren zum Herstellen und Schaltung solcher Flaechentransistoren
DE69011881T2 (de) Vorwärtsgekoppelte Darlingtonschaltung mit verminderter NPN-Rückwärts-Betaempfindlichkeit.
DE69521210T2 (de) Integriertes Elektronikbauteil mit verringerten parasitären Strömen und Verfahren dafür
DE2444588C2 (de) Integrierte Darlington-Schaltung
DE2407375A1 (de) Halbleiter-stromteileranordnung

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee