DE2520556A1 - Verfahren zum selektiven entfernen von material von der oberflaeche eines werkstueckes - Google Patents
Verfahren zum selektiven entfernen von material von der oberflaeche eines werkstueckesInfo
- Publication number
- DE2520556A1 DE2520556A1 DE19752520556 DE2520556A DE2520556A1 DE 2520556 A1 DE2520556 A1 DE 2520556A1 DE 19752520556 DE19752520556 DE 19752520556 DE 2520556 A DE2520556 A DE 2520556A DE 2520556 A1 DE2520556 A1 DE 2520556A1
- Authority
- DE
- Germany
- Prior art keywords
- workpiece
- axis
- ion current
- munich
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 28
- 239000000463 material Substances 0.000 title claims description 23
- 150000002500 ions Chemical class 0.000 claims description 14
- 238000010884 ion-beam technique Methods 0.000 claims description 13
- 229910052756 noble gas Inorganic materials 0.000 claims description 4
- 239000007921 spray Substances 0.000 description 13
- 238000005530 etching Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 239000002184 metal Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 235000013601 eggs Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/468,813 US3943047A (en) | 1974-05-10 | 1974-05-10 | Selective removal of material by sputter etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2520556A1 true DE2520556A1 (de) | 1975-11-20 |
Family
ID=23861343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752520556 Withdrawn DE2520556A1 (de) | 1974-05-10 | 1975-05-09 | Verfahren zum selektiven entfernen von material von der oberflaeche eines werkstueckes |
Country Status (8)
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS604652Y2 (ja) * | 1976-04-06 | 1985-02-12 | 株式会社島津製作所 | イオンエツチング装置 |
| US4238312A (en) * | 1979-07-23 | 1980-12-09 | International Business Machines Corporation | Sputtering system for optimizing quartz deposition uniformity |
| US4278493A (en) * | 1980-04-28 | 1981-07-14 | International Business Machines Corporation | Method for cleaning surfaces by ion milling |
| US4309267A (en) * | 1980-07-21 | 1982-01-05 | Bell Telephone Laboratories, Incorporated | Reactive sputter etching apparatus |
| GB8319716D0 (en) * | 1983-07-21 | 1983-08-24 | Secr Defence | Reactive ion etching |
| GB2148769A (en) * | 1983-10-22 | 1985-06-05 | Standard Telephones Cables Ltd | Topographic feature formation by ion beam milling of a substrate |
| US5238532A (en) * | 1992-02-27 | 1993-08-24 | Hughes Aircraft Company | Method and apparatus for removal of subsurface damage in semiconductor materials by plasma etching |
| US5376224A (en) * | 1992-02-27 | 1994-12-27 | Hughes Aircraft Company | Method and apparatus for non-contact plasma polishing and smoothing of uniformly thinned substrates |
| JPH11508488A (ja) * | 1995-06-30 | 1999-07-27 | ポール・コーポレーション | 分離システムおよび方法 |
| US5656535A (en) * | 1996-03-04 | 1997-08-12 | Siemens Aktiengesellschaft | Storage node process for deep trench-based DRAM |
| US7457085B2 (en) | 2005-03-31 | 2008-11-25 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers |
| US7360299B2 (en) * | 2005-03-31 | 2008-04-22 | Hitachi Global Storage Technologies Netherlands B. V. | Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer |
| US7460343B2 (en) * | 2005-03-31 | 2008-12-02 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer |
| US7360300B2 (en) * | 2005-03-31 | 2008-04-22 | Hitachi Global Storage Technologies Netherlands B.V. | Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer |
| US7672090B2 (en) * | 2005-03-31 | 2010-03-02 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer |
| US7382586B2 (en) * | 2005-03-31 | 2008-06-03 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer |
| US7363699B2 (en) * | 2005-03-31 | 2008-04-29 | Hitachi Global Storage Technologies Netherlands B. V. | Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers |
| US8084346B1 (en) * | 2010-10-20 | 2011-12-27 | International Business Machines Corporation | Replacement metal gate method |
| US10002764B1 (en) | 2016-12-16 | 2018-06-19 | Varian Semiconductor Equipment Associates, Inc. | Sputter etch material selectivity |
| US11053580B2 (en) | 2018-02-21 | 2021-07-06 | Varian Semiconductor Equipment Associates, Inc. | Techniques for selective deposition using angled ions |
| CN113658855A (zh) * | 2020-05-12 | 2021-11-16 | 江苏鲁汶仪器有限公司 | 一种侧壁金属的刻蚀方法及其应用 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3325393A (en) * | 1964-05-28 | 1967-06-13 | Gen Electric | Electrical discharge cleaning and coating process |
| US3526584A (en) * | 1964-09-25 | 1970-09-01 | Western Electric Co | Method of providing a field free region above a substrate during sputter-depositing thereon |
| US3410775A (en) * | 1966-04-14 | 1968-11-12 | Bell Telephone Labor Inc | Electrostatic control of electron movement in cathode sputtering |
| US3361659A (en) * | 1967-08-14 | 1968-01-02 | Ibm | Process of depositing thin films by cathode sputtering using a controlled grid |
| FR1594542A (US06589383-20030708-C00041.png) * | 1967-12-22 | 1970-06-08 | ||
| US3558351A (en) * | 1968-12-19 | 1971-01-26 | Bell Telephone Labor Inc | Thin semiconductor films |
| FR2082505A5 (US06589383-20030708-C00041.png) * | 1970-03-18 | 1971-12-10 | Radiotechnique Compelec | |
| US3699034A (en) * | 1971-03-15 | 1972-10-17 | Sperry Rand Corp | Method for sputter depositing dielectric materials |
| US3820994A (en) * | 1972-06-07 | 1974-06-28 | Westinghouse Electric Corp | Penetration of polyimide films |
-
1974
- 1974-05-10 US US05/468,813 patent/US3943047A/en not_active Expired - Lifetime
- 1974-12-19 CA CA216,413A patent/CA1032450A/en not_active Expired
-
1975
- 1975-05-06 JP JP50054166A patent/JPS50152937A/ja active Pending
- 1975-05-07 IT IT68173/75A patent/IT1032833B/it active
- 1975-05-09 FR FR7514538A patent/FR2270678B1/fr not_active Expired
- 1975-05-09 GB GB19651/75A patent/GB1499847A/en not_active Expired
- 1975-05-09 NL NL7505474A patent/NL7505474A/xx not_active Application Discontinuation
- 1975-05-09 DE DE19752520556 patent/DE2520556A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| FR2270678A1 (US06589383-20030708-C00041.png) | 1975-12-05 |
| FR2270678B1 (US06589383-20030708-C00041.png) | 1978-03-17 |
| US3943047A (en) | 1976-03-09 |
| GB1499847A (en) | 1978-02-01 |
| NL7505474A (nl) | 1975-11-12 |
| IT1032833B (it) | 1979-06-20 |
| CA1032450A (en) | 1978-06-06 |
| JPS50152937A (US06589383-20030708-C00041.png) | 1975-12-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |