DE2514729C3 - In Kaskade aufgebauter Verstärker mit Transistoren - Google Patents

In Kaskade aufgebauter Verstärker mit Transistoren

Info

Publication number
DE2514729C3
DE2514729C3 DE2514729A DE2514729A DE2514729C3 DE 2514729 C3 DE2514729 C3 DE 2514729C3 DE 2514729 A DE2514729 A DE 2514729A DE 2514729 A DE2514729 A DE 2514729A DE 2514729 C3 DE2514729 C3 DE 2514729C3
Authority
DE
Germany
Prior art keywords
transistor
emitter
region
area
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2514729A
Other languages
German (de)
English (en)
Other versions
DE2514729A1 (de
DE2514729B2 (de
Inventor
Katsuaki Kawasaki Kanagawa Tsurushima (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2514729A1 publication Critical patent/DE2514729A1/de
Publication of DE2514729B2 publication Critical patent/DE2514729B2/de
Application granted granted Critical
Publication of DE2514729C3 publication Critical patent/DE2514729C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H03F3/185—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only with field-effect devices
    • H03F3/1855—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/306—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in junction-FET amplifiers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
DE2514729A 1974-04-05 1975-04-04 In Kaskade aufgebauter Verstärker mit Transistoren Expired DE2514729C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3858174A JPS5732509B2 (enExample) 1974-04-05 1974-04-05

Publications (3)

Publication Number Publication Date
DE2514729A1 DE2514729A1 (de) 1975-10-16
DE2514729B2 DE2514729B2 (de) 1979-08-30
DE2514729C3 true DE2514729C3 (de) 1980-04-24

Family

ID=12529245

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2514729A Expired DE2514729C3 (de) 1974-04-05 1975-04-04 In Kaskade aufgebauter Verstärker mit Transistoren

Country Status (8)

Country Link
US (1) US3949316A (enExample)
JP (1) JPS5732509B2 (enExample)
CA (1) CA1027192A (enExample)
DE (1) DE2514729C3 (enExample)
FR (1) FR2266954B1 (enExample)
GB (1) GB1494429A (enExample)
IT (1) IT1034857B (enExample)
NL (1) NL7504128A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4547799A (en) * 1983-05-31 1985-10-15 Rca Corporation Feedback kinescope driver
NL8603152A (nl) * 1986-12-11 1988-07-01 Philips Nv Filterschakeling.
US5017884A (en) * 1989-11-01 1991-05-21 Perandi Aado J Vacuum tube and MOSFET transimpedance amplifier
JP3072002B2 (ja) * 1994-08-01 2000-07-31 株式会社東芝 アクティブバンドパスフィルタ
US6049126A (en) * 1995-12-14 2000-04-11 Nec Corporation Semiconductor package and amplifier employing the same
GB2438658A (en) * 2006-06-03 2007-12-05 John Nigel Ellis A phase compensation circuit for a low distortion audio amplifier

Also Published As

Publication number Publication date
CA1027192A (en) 1978-02-28
GB1494429A (en) 1977-12-07
FR2266954B1 (enExample) 1980-05-16
DE2514729A1 (de) 1975-10-16
DE2514729B2 (de) 1979-08-30
NL7504128A (nl) 1975-10-07
JPS50132881A (enExample) 1975-10-21
AU7977375A (en) 1976-10-07
IT1034857B (it) 1979-10-10
FR2266954A1 (enExample) 1975-10-31
JPS5732509B2 (enExample) 1982-07-12
US3949316A (en) 1976-04-06

Similar Documents

Publication Publication Date Title
DE3024348C2 (enExample)
DE932435C (de) Verstaerkerschaltung mit Transistoren
DE1279196B (de) Flaechentransistor
DE2424812A1 (de) Verstaerker mit ueberstromschutz
DE2603164A1 (de) Differentialverstaerker
DE1489054A1 (de) Elektronische Schaltungsanordnungen unter Verwendung von Feldeffekttransistoren
DE2638801A1 (de) Kleinsignaltransistorverstaerker
DE1154834B (de) Verstaerkende, auf einem Kristall aufgebaute Halbleiterschaltungsanordnung
DE2514729C3 (de) In Kaskade aufgebauter Verstärker mit Transistoren
DE2515577A1 (de) Schaltungsanordnung mit einem transistor hoher eingangsimpedanz
DE2515457C3 (de) Differenzverstärker
DE2519056C2 (enExample)
DE2514619C3 (de) Regelbare Differentialverstärkeranordnung
DE2513893C2 (de) Transistorverstärker
DE2415364A1 (de) Verstaerkungssteuerkreis
DE1762435B2 (de) Hochverstaerkende integrierte verstarkerschaltung mit einem mos feldeffekttransistor
DE2516758A1 (de) Steuerschaltung
DE1035776B (de) Transistor mit einem flachen Halbleiterkoerper und mehreren sperrfreien und sperrenden Elektroden
DE1297233B (de) Feldeffekttransistor
DE2418560A1 (de) Halbleitervorrichtung
DE2514205C3 (de) Elektronische Schalteinrichtung zur abwechselnden Durchschaltung zweier Eingangssignale
EP0029538B1 (de) Integrierbare Schaltung zur Verhinderung des Sättigungszustandes eines Transistors
DE2522490B2 (de) Stabilisierter Transistorverstärker
DE3446001C2 (de) Integrierte Differentialverstärkerschaltung
DE2740786C2 (de) Bipolarer Tetroden-Transistor und seine Verwendung als EPROM-Element

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee