DE2433981C3 - Halbleitersprechpfadschalter - Google Patents
HalbleitersprechpfadschalterInfo
- Publication number
- DE2433981C3 DE2433981C3 DE19742433981 DE2433981A DE2433981C3 DE 2433981 C3 DE2433981 C3 DE 2433981C3 DE 19742433981 DE19742433981 DE 19742433981 DE 2433981 A DE2433981 A DE 2433981A DE 2433981 C3 DE2433981 C3 DE 2433981C3
- Authority
- DE
- Germany
- Prior art keywords
- base
- semiconductor
- switching elements
- switch
- semiconductor region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007787 solid Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims description 30
- 238000009413 insulation Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000011109 contamination Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04Q—SELECTING
- H04Q3/00—Selecting arrangements
- H04Q3/42—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
- H04Q3/52—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
- H04Q3/521—Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Manufacturing & Machinery (AREA)
- Use Of Switch Circuits For Exchanges And Methods Of Control Of Multiplex Exchanges (AREA)
- Electronic Switches (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8478073U JPS5032942U (ko) | 1973-07-23 | 1973-07-23 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2433981A1 DE2433981A1 (de) | 1975-02-13 |
| DE2433981B2 DE2433981B2 (ko) | 1975-09-04 |
| DE2433981C3 true DE2433981C3 (de) | 1985-01-10 |
Family
ID=13840191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19742433981 Expired DE2433981C3 (de) | 1973-07-23 | 1974-07-15 | Halbleitersprechpfadschalter |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS5032942U (ko) |
| CA (1) | CA1026467A (ko) |
| DE (1) | DE2433981C3 (ko) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2049283B (en) * | 1978-12-20 | 1983-07-27 | Western Electric Co | High voltage dielectrically isolated solid-state switch |
| US4608590A (en) * | 1978-12-20 | 1986-08-26 | At&T Bell Laboratories | High voltage dielectrically isolated solid-state switch |
| US4587545A (en) * | 1978-12-20 | 1986-05-06 | At&T Bell Laboratories | High voltage dielectrically isolated remote gate solid-state switch |
| US4602268A (en) * | 1978-12-20 | 1986-07-22 | At&T Bell Laboratories | High voltage dielectrically isolated dual gate solid-state switch |
| CA1145057A (en) * | 1979-12-28 | 1983-04-19 | Adrian R. Hartman | High voltage solid-state switch |
| US4587656A (en) * | 1979-12-28 | 1986-05-06 | At&T Bell Laboratories | High voltage solid-state switch |
| JPH06151573A (ja) * | 1992-11-06 | 1994-05-31 | Hitachi Ltd | 半導体集積回路装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3381182A (en) * | 1964-10-19 | 1968-04-30 | Philco Ford Corp | Microcircuits having buried conductive layers |
| US3471922A (en) * | 1966-06-02 | 1969-10-14 | Raytheon Co | Monolithic integrated circuitry with dielectric isolated functional regions |
| US3431468A (en) * | 1967-04-17 | 1969-03-04 | Motorola Inc | Buried integrated circuit radiation shields |
-
1973
- 1973-07-23 JP JP8478073U patent/JPS5032942U/ja active Pending
-
1974
- 1974-07-15 DE DE19742433981 patent/DE2433981C3/de not_active Expired
- 1974-07-22 CA CA205,355A patent/CA1026467A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA1026467A (en) | 1978-02-14 |
| DE2433981A1 (de) | 1975-02-13 |
| JPS5032942U (ko) | 1975-04-10 |
| DE2433981B2 (ko) | 1975-09-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69832310T2 (de) | Ein bistabiler SCR-ähnlicher Schalter für den ESD-Schutz von Silizium-auf-einem-Isolator integrierten Schaltkreisen | |
| DE2313312A1 (de) | Integrierte schaltung mit isolierte gate-elektroden aufweisenden feldeffekttransistoren | |
| DE102007006853A1 (de) | ESD-Schutzvorrichtung und elektrische Schaltung mit derselben | |
| DE3806164A1 (de) | Halbleiterbauelement mit hoher durchbruchspannung | |
| DE3737790A1 (de) | Quer-doppelgate-thyristor und verfahren zu seiner herstellung | |
| DE3533478C2 (de) | Monolithisch integrierte Halbleiter-Leistungsvorrichtung | |
| DE2433981C3 (de) | Halbleitersprechpfadschalter | |
| DE2300116A1 (de) | Hochfrequenz-feldeffekttransistor mit isolierter gate-elektrode fuer breitbandbetrieb | |
| DE3002740A1 (de) | Verfahren zur ausbildung von substratelektroden bei mos-ics mit lokaler oxidation | |
| DE2953931C2 (ko) | ||
| DE19824242A1 (de) | Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung | |
| DE3331631C2 (ko) | ||
| DE3120254C2 (ko) | ||
| DE3688030T2 (de) | Bipolare integrierte schaltung mit isolationsstruktur und substratkontakt und verfahren zur herstellung. | |
| WO2002019434A1 (de) | Trench-igbt | |
| DE2847822A1 (de) | Integrierte halbleitervorrichtung | |
| EP0006119B1 (de) | Integrierter Sperrschicht-Feldeffekt-Transistor und Verfahren zu dessen Herstellung | |
| DE19518339A1 (de) | Halbleiterspeichereinrichtung und ein Verfahren zur Benutzung derselben | |
| WO2011058114A1 (de) | Hochvolttransistor, esd-schutzschaltung und verwendung eines hochvolttransistors in einer esd-schutzschaltung | |
| DE3740302C2 (ko) | ||
| EP0442064B1 (de) | Eingangsschutzstruktur für integrierte Schaltungen | |
| WO1999041780A1 (de) | Halbleiterbauelement mit struktur zur vermeidung von querströmen | |
| DE68925061T2 (de) | Integrierte Hochspannungsschaltung mit Isolierungsübergang | |
| DE4003389C2 (ko) | ||
| DD147897A5 (de) | Dielektrisch isolierter hochspannungs-festkoerperschalter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |