DE2425328C3 - Verfahren zur Herstellung einer opto-elektronischen Richtungsleitung - Google Patents

Verfahren zur Herstellung einer opto-elektronischen Richtungsleitung

Info

Publication number
DE2425328C3
DE2425328C3 DE2425328A DE2425328A DE2425328C3 DE 2425328 C3 DE2425328 C3 DE 2425328C3 DE 2425328 A DE2425328 A DE 2425328A DE 2425328 A DE2425328 A DE 2425328A DE 2425328 C3 DE2425328 C3 DE 2425328C3
Authority
DE
Germany
Prior art keywords
junction
radiation source
area
implantation
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2425328A
Other languages
German (de)
English (en)
Other versions
DE2425328B2 (de
DE2425328A1 (de
Inventor
Robert G. Hunsperger
Gordon A. Shifrin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of DE2425328A1 publication Critical patent/DE2425328A1/de
Publication of DE2425328B2 publication Critical patent/DE2425328B2/de
Application granted granted Critical
Publication of DE2425328C3 publication Critical patent/DE2425328C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • H10P95/00—

Landscapes

  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
DE2425328A 1973-06-29 1974-05-24 Verfahren zur Herstellung einer opto-elektronischen Richtungsleitung Expired DE2425328C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37522773A 1973-06-29 1973-06-29

Publications (3)

Publication Number Publication Date
DE2425328A1 DE2425328A1 (de) 1975-01-16
DE2425328B2 DE2425328B2 (de) 1979-04-12
DE2425328C3 true DE2425328C3 (de) 1979-11-29

Family

ID=23480038

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2425328A Expired DE2425328C3 (de) 1973-06-29 1974-05-24 Verfahren zur Herstellung einer opto-elektronischen Richtungsleitung

Country Status (5)

Country Link
JP (1) JPS5233474B2 (OSRAM)
DE (1) DE2425328C3 (OSRAM)
FR (1) FR2235489B1 (OSRAM)
GB (1) GB1463886A (OSRAM)
NL (1) NL7408810A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5249786A (en) * 1975-10-17 1977-04-21 Matsushita Electric Ind Co Ltd Semiconductor light coupling device
DE19635215A1 (de) * 1996-08-30 1998-03-12 Forschungszentrum Juelich Gmbh Optokoppler und Verfahren zu seiner Herstellung
EP2997415B1 (en) 2013-05-14 2019-09-18 Elenion Technologies, LLC Ultra-responsive phase shifters for depletion mode silicon modulators
CN115298802B (zh) * 2020-03-24 2025-10-28 住友重机械工业株式会社 进程监视器及进程监视方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3705309A (en) * 1971-02-05 1972-12-05 Westinghouse Electric Corp Thin film optoelectronic semiconductor device using light coupling

Also Published As

Publication number Publication date
NL7408810A (OSRAM) 1974-12-31
JPS5039086A (OSRAM) 1975-04-10
DE2425328B2 (de) 1979-04-12
JPS5233474B2 (OSRAM) 1977-08-29
GB1463886A (en) 1977-02-09
FR2235489B1 (OSRAM) 1978-02-17
FR2235489A1 (OSRAM) 1975-01-24
DE2425328A1 (de) 1975-01-16

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee