DE2422330A1 - Optoelektronisches halbleiter-koppelelement - Google Patents
Optoelektronisches halbleiter-koppelelementInfo
- Publication number
- DE2422330A1 DE2422330A1 DE2422330A DE2422330A DE2422330A1 DE 2422330 A1 DE2422330 A1 DE 2422330A1 DE 2422330 A DE2422330 A DE 2422330A DE 2422330 A DE2422330 A DE 2422330A DE 2422330 A1 DE2422330 A1 DE 2422330A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- light
- emitting
- arrangement according
- band gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 230000008878 coupling Effects 0.000 title claims description 6
- 238000010168 coupling process Methods 0.000 title claims description 6
- 238000005859 coupling reaction Methods 0.000 title claims description 6
- 230000005693 optoelectronics Effects 0.000 title claims description 6
- 239000013078 crystal Substances 0.000 claims description 22
- 230000005540 biological transmission Effects 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 108010074506 Transfer Factor Proteins 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2422330A DE2422330A1 (de) | 1974-05-08 | 1974-05-08 | Optoelektronisches halbleiter-koppelelement |
| CH482375A CH578255A5 (US20100056889A1-20100304-C00004.png) | 1974-05-08 | 1975-04-16 | |
| GB1601575A GB1474846A (en) | 1974-05-08 | 1975-04-18 | Semiconductor opto-electronic coupling elements |
| IT22810/75A IT1037694B (it) | 1974-05-08 | 1975-04-29 | Elemento di accoppiamento ottico elettronico a semiconduttori |
| SE7505227A SE407128B (sv) | 1974-05-08 | 1975-05-06 | Optoelektroniskt halvledarkopplingselement |
| FR7514354A FR2270679B1 (US20100056889A1-20100304-C00004.png) | 1974-05-08 | 1975-05-07 | |
| BE156156A BE828840A (fr) | 1974-05-08 | 1975-05-07 | Element de couplage opto-electronique a semi-conducteurs |
| JP5527175A JPS50161184A (US20100056889A1-20100304-C00004.png) | 1974-05-08 | 1975-05-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2422330A DE2422330A1 (de) | 1974-05-08 | 1974-05-08 | Optoelektronisches halbleiter-koppelelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2422330A1 true DE2422330A1 (de) | 1975-11-13 |
Family
ID=5915010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2422330A Withdrawn DE2422330A1 (de) | 1974-05-08 | 1974-05-08 | Optoelektronisches halbleiter-koppelelement |
Country Status (8)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6403984B1 (en) * | 1994-04-15 | 2002-06-11 | Chulalongkorn University | Amorphous semiconductor photocoupler |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4399448A (en) * | 1981-02-02 | 1983-08-16 | Bell Telephone Laboratories, Incorporated | High sensitivity photon feedback photodetectors |
| US4438447A (en) * | 1982-01-18 | 1984-03-20 | Bell Telephone Laboratories, Incorporated | Multilayered optical integrated circuit |
-
1974
- 1974-05-08 DE DE2422330A patent/DE2422330A1/de not_active Withdrawn
-
1975
- 1975-04-16 CH CH482375A patent/CH578255A5/xx not_active IP Right Cessation
- 1975-04-18 GB GB1601575A patent/GB1474846A/en not_active Expired
- 1975-04-29 IT IT22810/75A patent/IT1037694B/it active
- 1975-05-06 SE SE7505227A patent/SE407128B/xx unknown
- 1975-05-07 FR FR7514354A patent/FR2270679B1/fr not_active Expired
- 1975-05-07 JP JP5527175A patent/JPS50161184A/ja active Pending
- 1975-05-07 BE BE156156A patent/BE828840A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6403984B1 (en) * | 1994-04-15 | 2002-06-11 | Chulalongkorn University | Amorphous semiconductor photocoupler |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2270679B1 (US20100056889A1-20100304-C00004.png) | 1978-06-09 |
| BE828840A (fr) | 1975-09-01 |
| SE407128B (sv) | 1979-03-12 |
| CH578255A5 (US20100056889A1-20100304-C00004.png) | 1976-07-30 |
| IT1037694B (it) | 1979-11-20 |
| GB1474846A (en) | 1977-05-25 |
| SE7505227L (sv) | 1975-11-10 |
| JPS50161184A (US20100056889A1-20100304-C00004.png) | 1975-12-26 |
| FR2270679A1 (US20100056889A1-20100304-C00004.png) | 1975-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |