DE2414856C2 - Vorrichtung zum Herstellen einer Halbleiterverbindung, insbesondere Galliumphosphid - Google Patents

Vorrichtung zum Herstellen einer Halbleiterverbindung, insbesondere Galliumphosphid

Info

Publication number
DE2414856C2
DE2414856C2 DE2414856A DE2414856A DE2414856C2 DE 2414856 C2 DE2414856 C2 DE 2414856C2 DE 2414856 A DE2414856 A DE 2414856A DE 2414856 A DE2414856 A DE 2414856A DE 2414856 C2 DE2414856 C2 DE 2414856C2
Authority
DE
Germany
Prior art keywords
ampoule
semiconductor compound
autoclave
boat
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2414856A
Other languages
German (de)
English (en)
Other versions
DE2414856A1 (de
Inventor
Josef 8520 Erlangen Stadter
Klaus 8501 Markt Eckental Zeuch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE2414856A priority Critical patent/DE2414856C2/de
Priority to CH317175A priority patent/CH594445A5/xx
Priority to US05/559,016 priority patent/US4018566A/en
Priority to JP50034227A priority patent/JPS50129176A/ja
Priority to GB13088/75A priority patent/GB1491121A/en
Publication of DE2414856A1 publication Critical patent/DE2414856A1/de
Application granted granted Critical
Publication of DE2414856C2 publication Critical patent/DE2414856C2/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE2414856A 1974-03-27 1974-03-27 Vorrichtung zum Herstellen einer Halbleiterverbindung, insbesondere Galliumphosphid Expired DE2414856C2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE2414856A DE2414856C2 (de) 1974-03-27 1974-03-27 Vorrichtung zum Herstellen einer Halbleiterverbindung, insbesondere Galliumphosphid
CH317175A CH594445A5 (US06521211-20030218-C00004.png) 1974-03-27 1975-03-13
US05/559,016 US4018566A (en) 1974-03-27 1975-03-17 Light responsive measuring device for heater control
JP50034227A JPS50129176A (US06521211-20030218-C00004.png) 1974-03-27 1975-03-20
GB13088/75A GB1491121A (en) 1974-03-27 1975-03-27 Synthetic apparatus and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2414856A DE2414856C2 (de) 1974-03-27 1974-03-27 Vorrichtung zum Herstellen einer Halbleiterverbindung, insbesondere Galliumphosphid

Publications (2)

Publication Number Publication Date
DE2414856A1 DE2414856A1 (de) 1975-10-16
DE2414856C2 true DE2414856C2 (de) 1983-01-27

Family

ID=5911367

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2414856A Expired DE2414856C2 (de) 1974-03-27 1974-03-27 Vorrichtung zum Herstellen einer Halbleiterverbindung, insbesondere Galliumphosphid

Country Status (5)

Country Link
US (1) US4018566A (US06521211-20030218-C00004.png)
JP (1) JPS50129176A (US06521211-20030218-C00004.png)
CH (1) CH594445A5 (US06521211-20030218-C00004.png)
DE (1) DE2414856C2 (US06521211-20030218-C00004.png)
GB (1) GB1491121A (US06521211-20030218-C00004.png)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7605234A (nl) * 1976-05-17 1977-11-21 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
US4553853A (en) * 1984-02-27 1985-11-19 International Business Machines Corporation End point detector for a tin lead evaporator
JPH0766910B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 半導体単結晶成長装置
US5178719A (en) * 1991-08-20 1993-01-12 Horiba Instruments, Inc. Continuous refill crystal growth method
US5540780A (en) * 1995-06-23 1996-07-30 The United States Of America As Represented By The Secretary Of The Air Force Molecular beam epitaxy effusion cell
US11130261B2 (en) * 2019-03-28 2021-09-28 The Boeing Company Steerable heat source

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US986180A (en) * 1910-09-21 1911-03-07 George A Koenig Process of extracting vanadium from its ores.
US2893847A (en) * 1954-02-23 1959-07-07 Siemens Ag Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
DE1029803B (de) * 1954-09-18 1958-05-14 Siemens Ag Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System
FR1315934A (fr) * 1961-12-15 1963-01-25 Radiotechnique Appareil horizontal pour la purification et le tirage de cristaux semi-conducteurs
DE2021345A1 (de) * 1970-04-30 1972-01-13 Siemens Ag Verfahren zum Herstellen von sauerstoffarmen Galliumarsenid unter Verwendung von Silicium oder Germanium als Dotierstoff
JPS523344B2 (US06521211-20030218-C00004.png) * 1971-12-04 1977-01-27
US3877883A (en) * 1973-07-13 1975-04-15 Rca Corp Method of growing single crystals of compounds
US3884642A (en) * 1973-07-23 1975-05-20 Applied Materials Inc Radiantly heated crystal growing furnace

Also Published As

Publication number Publication date
US4018566A (en) 1977-04-19
DE2414856A1 (de) 1975-10-16
GB1491121A (en) 1977-11-09
JPS50129176A (US06521211-20030218-C00004.png) 1975-10-13
CH594445A5 (US06521211-20030218-C00004.png) 1978-01-13

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee