DE2414788A1 - Verfahren zur herstellung von am schmelzpunkt zersetzlichen verbindungen und legierungen - Google Patents
Verfahren zur herstellung von am schmelzpunkt zersetzlichen verbindungen und legierungenInfo
- Publication number
- DE2414788A1 DE2414788A1 DE2414788A DE2414788A DE2414788A1 DE 2414788 A1 DE2414788 A1 DE 2414788A1 DE 2414788 A DE2414788 A DE 2414788A DE 2414788 A DE2414788 A DE 2414788A DE 2414788 A1 DE2414788 A1 DE 2414788A1
- Authority
- DE
- Germany
- Prior art keywords
- oxygen
- pressure vessel
- pressure
- ampoule
- vol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims description 10
- 238000000034 method Methods 0.000 title claims description 10
- 238000002844 melting Methods 0.000 title claims description 5
- 230000008018 melting Effects 0.000 title claims description 5
- 229910045601 alloy Inorganic materials 0.000 title claims description 4
- 239000000956 alloy Substances 0.000 title claims description 4
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000003708 ampul Substances 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 238000003786 synthesis reaction Methods 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 235000011089 carbon dioxide Nutrition 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 5
- 229910005540 GaP Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 206010061218 Inflammation Diseases 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000004054 inflammatory process Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/04—Pressure vessels, e.g. autoclaves
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/06—Hydrogen phosphides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
- Examining Or Testing Airtightness (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2414788A DE2414788A1 (de) | 1974-03-27 | 1974-03-27 | Verfahren zur herstellung von am schmelzpunkt zersetzlichen verbindungen und legierungen |
| CH317375A CH613632A5 (enExample) | 1974-03-27 | 1975-03-13 | |
| US05/561,341 US3988920A (en) | 1974-03-27 | 1975-03-24 | Method for detecting a leak in a reaction tube when forming a IIIA-VB compound |
| GB12526/75A GB1505745A (en) | 1974-03-27 | 1975-03-25 | Method for detecting volatile meterials |
| JP50036537A JPS50130604A (enExample) | 1974-03-27 | 1975-03-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2414788A DE2414788A1 (de) | 1974-03-27 | 1974-03-27 | Verfahren zur herstellung von am schmelzpunkt zersetzlichen verbindungen und legierungen |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2414788A1 true DE2414788A1 (de) | 1975-10-02 |
| DE2414788B2 DE2414788B2 (enExample) | 1978-08-17 |
| DE2414788C3 DE2414788C3 (enExample) | 1979-04-12 |
Family
ID=5911345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2414788A Granted DE2414788A1 (de) | 1974-03-27 | 1974-03-27 | Verfahren zur herstellung von am schmelzpunkt zersetzlichen verbindungen und legierungen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3988920A (enExample) |
| JP (1) | JPS50130604A (enExample) |
| CH (1) | CH613632A5 (enExample) |
| DE (1) | DE2414788A1 (enExample) |
| GB (1) | GB1505745A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4038510A (en) * | 1976-03-03 | 1977-07-26 | General Electric Company | Food temperature control cable for microwave oven |
| US5363694A (en) * | 1993-11-17 | 1994-11-15 | United Technologies Corporation | Ampoule rupture detection system |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1933791A (en) * | 1931-03-20 | 1933-11-07 | Eastman Kodak Co | Method of detecting leaks in a closed gas system |
| US2374762A (en) * | 1941-10-28 | 1945-05-01 | Robert J Mcnitt | Method for detecting faulty electrolytic cell operation |
| US2708896A (en) * | 1954-05-12 | 1955-05-24 | Millard F Smith | Indicating protective covers for pipe flanges and valves |
| US3406017A (en) * | 1964-08-07 | 1968-10-15 | American Gas & Chemicals Inc | Leak detecting methods and apparatus |
| US3598532A (en) * | 1968-11-29 | 1971-08-10 | Loral Corp | Means and method for crucible leak detection |
| US3572085A (en) * | 1968-12-18 | 1971-03-23 | Joseph J Packo | Method of detecting leaks in fluid-containing equipment |
-
1974
- 1974-03-27 DE DE2414788A patent/DE2414788A1/de active Granted
-
1975
- 1975-03-13 CH CH317375A patent/CH613632A5/xx not_active IP Right Cessation
- 1975-03-24 US US05/561,341 patent/US3988920A/en not_active Expired - Lifetime
- 1975-03-25 GB GB12526/75A patent/GB1505745A/en not_active Expired
- 1975-03-26 JP JP50036537A patent/JPS50130604A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3988920A (en) | 1976-11-02 |
| CH613632A5 (enExample) | 1979-10-15 |
| GB1505745A (en) | 1978-03-30 |
| DE2414788B2 (enExample) | 1978-08-17 |
| JPS50130604A (enExample) | 1975-10-16 |
| DE2414788C3 (enExample) | 1979-04-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) |