DE2351554C2 - Speicher für direkten Zugriff mit dynamischen Speicherzellen - Google Patents
Speicher für direkten Zugriff mit dynamischen SpeicherzellenInfo
- Publication number
- DE2351554C2 DE2351554C2 DE2351554A DE2351554A DE2351554C2 DE 2351554 C2 DE2351554 C2 DE 2351554C2 DE 2351554 A DE2351554 A DE 2351554A DE 2351554 A DE2351554 A DE 2351554A DE 2351554 C2 DE2351554 C2 DE 2351554C2
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- memory
- charge
- common point
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 14
- 230000005669 field effect Effects 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- 238000013500 data storage Methods 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims 3
- 238000001514 detection method Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 description 8
- 230000008929 regeneration Effects 0.000 description 7
- 238000011069 regeneration method Methods 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000006880 cross-coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- -1 nitrite-silicon dioxide-silicon Chemical compound 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29796272A | 1972-10-16 | 1972-10-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2351554A1 DE2351554A1 (de) | 1974-04-18 |
| DE2351554C2 true DE2351554C2 (de) | 1983-12-15 |
Family
ID=23148434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2351554A Expired DE2351554C2 (de) | 1972-10-16 | 1973-10-13 | Speicher für direkten Zugriff mit dynamischen Speicherzellen |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3774177A (Direct) |
| JP (1) | JPS5644517B2 (Direct) |
| CA (1) | CA1003963A (Direct) |
| DE (1) | DE2351554C2 (Direct) |
| FR (1) | FR2203139B1 (Direct) |
| GB (1) | GB1401101A (Direct) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2352607B2 (de) * | 1972-10-20 | 1976-10-28 | Hitachi, Ltd., Tokio | Halbleiterspeicher |
| US3876991A (en) * | 1973-07-11 | 1975-04-08 | Bell Telephone Labor Inc | Dual threshold, three transistor dynamic memory cell |
| US3922650A (en) * | 1974-11-11 | 1975-11-25 | Ncr Co | Switched capacitor non-volatile mnos random access memory cell |
| US4675841A (en) * | 1974-12-23 | 1987-06-23 | Pitney Bowes Inc. | Micro computerized electronic postage meter system |
| US3916390A (en) * | 1974-12-31 | 1975-10-28 | Ibm | Dynamic memory with non-volatile back-up mode |
| GB1547940A (en) * | 1976-08-16 | 1979-07-04 | Ncr Co | Data storage cell for use in a matrix memory |
| US4104734A (en) * | 1977-06-30 | 1978-08-01 | Fairchild Camera And Instrument Corporation | Low voltage data retention bias circuitry for volatile memories |
| US4375086A (en) * | 1980-05-15 | 1983-02-22 | Ncr Corporation | Volatile/non-volatile dynamic RAM system |
| JPS6044420U (ja) * | 1983-08-31 | 1985-03-28 | 三菱重工業株式会社 | 電線布設装置 |
| GB2310939B (en) * | 1993-03-19 | 1997-10-29 | Sven E Wahlstrom | Operating a dynamic memory |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3508211A (en) * | 1967-06-23 | 1970-04-21 | Sperry Rand Corp | Electrically alterable non-destructive readout field effect transistor memory |
| US3660827A (en) * | 1969-09-10 | 1972-05-02 | Litton Systems Inc | Bistable electrical circuit with non-volatile storage capability |
| US3718915A (en) * | 1971-06-07 | 1973-02-27 | Motorola Inc | Opposite conductivity gating circuit for refreshing information in semiconductor memory cells |
| BE788583A (fr) * | 1971-09-16 | 1973-01-02 | Intel Corp | Cellule a trois lignes pour memoire a circuit integre a acces aleatoir |
| US3781570A (en) * | 1971-11-22 | 1973-12-25 | Rca Corp | Storage circuit using multiple condition storage elements |
-
1972
- 1972-10-16 US US00297962A patent/US3774177A/en not_active Expired - Lifetime
-
1973
- 1973-09-10 CA CA180,619A patent/CA1003963A/en not_active Expired
- 1973-10-10 GB GB4723073A patent/GB1401101A/en not_active Expired
- 1973-10-13 DE DE2351554A patent/DE2351554C2/de not_active Expired
- 1973-10-15 FR FR7336651A patent/FR2203139B1/fr not_active Expired
- 1973-10-15 JP JP11487273A patent/JPS5644517B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1401101A (en) | 1975-07-16 |
| JPS4974849A (Direct) | 1974-07-19 |
| FR2203139A1 (Direct) | 1974-05-10 |
| US3774177A (en) | 1973-11-20 |
| DE2351554A1 (de) | 1974-04-18 |
| FR2203139B1 (Direct) | 1978-03-10 |
| CA1003963A (en) | 1977-01-18 |
| JPS5644517B2 (Direct) | 1981-10-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OI | Miscellaneous see part 1 | ||
| OI | Miscellaneous see part 1 | ||
| 8125 | Change of the main classification |
Ipc: G11C 11/24 |
|
| AF | Is addition to no. |
Ref country code: DE Ref document number: 2313476 Format of ref document f/p: P |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8340 | Patent of addition ceased/non-payment of fee of main patent |