DE2306149A1 - Kaltkathoden-feldelektronenemitter - Google Patents
Kaltkathoden-feldelektronenemitterInfo
- Publication number
- DE2306149A1 DE2306149A1 DE2306149A DE2306149A DE2306149A1 DE 2306149 A1 DE2306149 A1 DE 2306149A1 DE 2306149 A DE2306149 A DE 2306149A DE 2306149 A DE2306149 A DE 2306149A DE 2306149 A1 DE2306149 A1 DE 2306149A1
- Authority
- DE
- Germany
- Prior art keywords
- electron
- emitter
- photocathode
- matrix
- protruding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011159 matrix material Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 31
- 230000005855 radiation Effects 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 11
- 239000002800 charge carrier Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 230000006798 recombination Effects 0.000 claims description 5
- 238000005215 recombination Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 230000005641 tunneling Effects 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 9
- 239000000969 carrier Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 244000007853 Sarothamnus scoparius Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000035508 accumulation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000005915 ammonolysis reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- CUPFNGOKRMWUOO-UHFFFAOYSA-N hydron;difluoride Chemical compound F.F CUPFNGOKRMWUOO-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
- H01J31/48—Tubes with amplification of output effected by electron multiplier arrangements within the vacuum space
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/49—Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/917—Plural dopants of same conductivity type in same region
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00225517A US3814968A (en) | 1972-02-11 | 1972-02-11 | Solid state radiation sensitive field electron emitter and methods of fabrication thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2306149A1 true DE2306149A1 (de) | 1973-08-16 |
Family
ID=22845197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2306149A Pending DE2306149A1 (de) | 1972-02-11 | 1973-02-08 | Kaltkathoden-feldelektronenemitter |
Country Status (7)
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5826138B2 (ja) * | 1974-02-16 | 1983-06-01 | 三菱電機株式会社 | 電界放出針状電極群の製造方法 |
| US3970887A (en) * | 1974-06-19 | 1976-07-20 | Micro-Bit Corporation | Micro-structure field emission electron source |
| JPS5436828B2 (US20030204162A1-20031030-M00001.png) * | 1974-08-16 | 1979-11-12 | ||
| US3921022A (en) * | 1974-09-03 | 1975-11-18 | Rca Corp | Field emitting device and method of making same |
| NL7604569A (nl) * | 1976-04-29 | 1977-11-01 | Philips Nv | Veldemitterinrichting en werkwijze tot het vormen daarvan. |
| US4147949A (en) * | 1977-01-14 | 1979-04-03 | General Electric Company | Apparatus for X-ray radiography |
| US4156827A (en) * | 1978-06-19 | 1979-05-29 | The United States Of America As Represented By The Secretary Of The Army | Matrix cathode channel image device |
| DE2920569A1 (de) * | 1979-05-21 | 1980-12-04 | Ibm Deutschland | Elektrodenfuehrung fuer metallpapier- drucker |
| DE3752249T2 (de) * | 1986-07-04 | 1999-07-08 | Canon Kk | Elektronen emittierende Vorrichtung |
| USRE40566E1 (en) | 1987-07-15 | 2008-11-11 | Canon Kabushiki Kaisha | Flat panel display including electron emitting device |
| USRE39633E1 (en) | 1987-07-15 | 2007-05-15 | Canon Kabushiki Kaisha | Display device with electron-emitting device with electron-emitting region insulated from electrodes |
| USRE40062E1 (en) | 1987-07-15 | 2008-02-12 | Canon Kabushiki Kaisha | Display device with electron-emitting device with electron-emitting region insulated from electrodes |
| US5013902A (en) * | 1989-08-18 | 1991-05-07 | Allard Edward F | Microdischarge image converter |
| JP2968014B2 (ja) * | 1990-01-29 | 1999-10-25 | 三菱電機株式会社 | 微小真空管及びその製造方法 |
| US5267884A (en) * | 1990-01-29 | 1993-12-07 | Mitsubishi Denki Kabushiki Kaisha | Microminiature vacuum tube and production method |
| US5163328A (en) * | 1990-08-06 | 1992-11-17 | Colin Electronics Co., Ltd. | Miniature pressure sensor and pressure sensor arrays |
| US5461280A (en) * | 1990-08-29 | 1995-10-24 | Motorola | Field emission device employing photon-enhanced electron emission |
| US5150192A (en) * | 1990-09-27 | 1992-09-22 | The United States Of America As Represented By The Secretary Of The Navy | Field emitter array |
| US5627427A (en) * | 1991-12-09 | 1997-05-06 | Cornell Research Foundation, Inc. | Silicon tip field emission cathodes |
| US5199917A (en) * | 1991-12-09 | 1993-04-06 | Cornell Research Foundation, Inc. | Silicon tip field emission cathode arrays and fabrication thereof |
| US5391259A (en) * | 1992-05-15 | 1995-02-21 | Micron Technology, Inc. | Method for forming a substantially uniform array of sharp tips |
| US5753130A (en) * | 1992-05-15 | 1998-05-19 | Micron Technology, Inc. | Method for forming a substantially uniform array of sharp tips |
| GB2269048B (en) * | 1992-07-03 | 1995-10-04 | Third Generation Technology Li | Photoemitters |
| US5515234A (en) * | 1993-06-30 | 1996-05-07 | Texas Instruments Incorporated | Antistatic protector and method |
| WO1996000977A1 (en) * | 1994-06-30 | 1996-01-11 | Philips Electronics N.V. | Display device |
| RU2074444C1 (ru) * | 1994-07-26 | 1997-02-27 | Евгений Инвиевич Гиваргизов | Матричный автоэлектронный катод и электронный прибор для оптического отображения информации |
| TW289864B (US20030204162A1-20031030-M00001.png) * | 1994-09-16 | 1996-11-01 | Micron Display Tech Inc | |
| US6417605B1 (en) * | 1994-09-16 | 2002-07-09 | Micron Technology, Inc. | Method of preventing junction leakage in field emission devices |
| US5975975A (en) * | 1994-09-16 | 1999-11-02 | Micron Technology, Inc. | Apparatus and method for stabilization of threshold voltage in field emission displays |
| JP3095780B2 (ja) | 1994-11-04 | 2000-10-10 | マイクロン、ディスプレイテクノロジー、インコーポレーテッド | 低温酸化法を用いてエミッタサイトを尖らせる方法 |
| US5759078A (en) * | 1995-05-30 | 1998-06-02 | Texas Instruments Incorporated | Field emission device with close-packed microtip array |
| US5585301A (en) * | 1995-07-14 | 1996-12-17 | Micron Display Technology, Inc. | Method for forming high resistance resistors for limiting cathode current in field emission displays |
| US5635791A (en) * | 1995-08-24 | 1997-06-03 | Texas Instruments Incorporated | Field emission device with circular microtip array |
| US6181308B1 (en) | 1995-10-16 | 2001-01-30 | Micron Technology, Inc. | Light-insensitive resistor for current-limiting of field emission displays |
| US5695658A (en) * | 1996-03-07 | 1997-12-09 | Micron Display Technology, Inc. | Non-photolithographic etch mask for submicron features |
| US5952771A (en) * | 1997-01-07 | 1999-09-14 | Micron Technology, Inc. | Micropoint switch for use with field emission display and method for making same |
| US6103133A (en) * | 1997-03-19 | 2000-08-15 | Kabushiki Kaisha Toshiba | Manufacturing method of a diamond emitter vacuum micro device |
| US6174449B1 (en) | 1998-05-14 | 2001-01-16 | Micron Technology, Inc. | Magnetically patterned etch mask |
| WO1999067802A1 (fr) * | 1998-06-25 | 1999-12-29 | Hamamatsu Photonics K.K. | Photocathode |
| US6028322A (en) * | 1998-07-22 | 2000-02-22 | Micron Technology, Inc. | Double field oxide in field emission display and method |
| US6235545B1 (en) | 1999-02-16 | 2001-05-22 | Micron Technology, Inc. | Methods of treating regions of substantially upright silicon-comprising structures, method of treating silicon-comprising emitter structures, methods of forming field emission display devices, and cathode assemblies |
| US6441542B1 (en) | 1999-07-21 | 2002-08-27 | Micron Technology, Inc. | Cathode emitter devices, field emission display devices, and methods of detecting infrared light |
| US6992698B1 (en) | 1999-08-31 | 2006-01-31 | Micron Technology, Inc. | Integrated field emission array sensor, display, and transmitter, and apparatus including same |
| US6469436B1 (en) * | 2000-01-14 | 2002-10-22 | Micron Technology, Inc. | Radiation shielding for field emitters |
| US6908355B2 (en) * | 2001-11-13 | 2005-06-21 | Burle Technologies, Inc. | Photocathode |
| CN1300818C (zh) * | 2003-08-06 | 2007-02-14 | 北京大学 | 一种场发射针尖及其制备方法与应用 |
| FR2879342B1 (fr) * | 2004-12-15 | 2008-09-26 | Thales Sa | Cathode a emission de champ, a commande optique |
| US20090184638A1 (en) * | 2008-01-22 | 2009-07-23 | Micron Technology, Inc. | Field emitter image sensor devices, systems, and methods |
| US9441779B1 (en) | 2015-07-01 | 2016-09-13 | Whirlpool Corporation | Split hybrid insulation structure for an appliance |
| US10018406B2 (en) | 2015-12-28 | 2018-07-10 | Whirlpool Corporation | Multi-layer gas barrier materials for vacuum insulated structure |
| US10782014B2 (en) | 2016-11-11 | 2020-09-22 | Habib Technologies LLC | Plasmonic energy conversion device for vapor generation |
| EP3758041A1 (en) * | 2019-06-26 | 2020-12-30 | Hamamatsu Photonics K.K. | Electron tube and imaging device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE667169A (US20030204162A1-20031030-M00001.png) * | 1964-07-21 | |||
| US3453478A (en) * | 1966-05-31 | 1969-07-01 | Stanford Research Inst | Needle-type electron source |
| US3500102A (en) * | 1967-05-15 | 1970-03-10 | Us Army | Thin electron tube with electron emitters at intersections of crossed conductors |
| US3466485A (en) * | 1967-09-21 | 1969-09-09 | Bell Telephone Labor Inc | Cold cathode emitter having a mosaic of closely spaced needles |
| US3665241A (en) * | 1970-07-13 | 1972-05-23 | Stanford Research Inst | Field ionizer and field emission cathode structures and methods of production |
-
1972
- 1972-02-11 US US00225517A patent/US3814968A/en not_active Expired - Lifetime
-
1973
- 1973-01-31 CA CA162,501A patent/CA970821A/en not_active Expired
- 1973-02-05 GB GB553373A patent/GB1417032A/en not_active Expired
- 1973-02-07 JP JP1482973A patent/JPS5441193B2/ja not_active Expired
- 1973-02-08 DE DE2306149A patent/DE2306149A1/de active Pending
- 1973-02-09 FR FR7304666A patent/FR2171366B1/fr not_active Expired
- 1973-02-09 NL NL7301833A patent/NL7301833A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5441193B2 (US20030204162A1-20031030-M00001.png) | 1979-12-07 |
| JPS4897473A (US20030204162A1-20031030-M00001.png) | 1973-12-12 |
| FR2171366A1 (US20030204162A1-20031030-M00001.png) | 1973-09-21 |
| FR2171366B1 (US20030204162A1-20031030-M00001.png) | 1976-11-05 |
| CA970821A (en) | 1975-07-08 |
| US3814968A (en) | 1974-06-04 |
| NL7301833A (US20030204162A1-20031030-M00001.png) | 1973-08-14 |
| GB1417032A (en) | 1975-12-10 |
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