DE2258087A1 - Halbleiterkoerper - Google Patents
HalbleiterkoerperInfo
- Publication number
- DE2258087A1 DE2258087A1 DE2258087A DE2258087A DE2258087A1 DE 2258087 A1 DE2258087 A1 DE 2258087A1 DE 2258087 A DE2258087 A DE 2258087A DE 2258087 A DE2258087 A DE 2258087A DE 2258087 A1 DE2258087 A1 DE 2258087A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- layer
- band gap
- conductive
- conducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 230000007704 transition Effects 0.000 claims description 12
- 230000005855 radiation Effects 0.000 claims description 11
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000002800 charge carrier Substances 0.000 claims description 8
- 230000006798 recombination Effects 0.000 claims description 7
- 238000005215 recombination Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 238000013016 damping Methods 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 claims description 5
- 230000002787 reinforcement Effects 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims 3
- 230000005540 biological transmission Effects 0.000 claims 1
- 230000000638 stimulation Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 53
- 230000006378 damage Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 241001233037 catfish Species 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 210000004994 reproductive system Anatomy 0.000 description 1
- 239000012791 sliding layer Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20370971A | 1971-12-01 | 1971-12-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2258087A1 true DE2258087A1 (de) | 1973-06-07 |
Family
ID=22754996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2258087A Pending DE2258087A1 (de) | 1971-12-01 | 1972-11-27 | Halbleiterkoerper |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS4865881A (OSRAM) |
| BE (1) | BE791928A (OSRAM) |
| CA (1) | CA968443A (OSRAM) |
| DE (1) | DE2258087A1 (OSRAM) |
| FR (1) | FR2162123B1 (OSRAM) |
| GB (1) | GB1363796A (OSRAM) |
| IT (1) | IT975901B (OSRAM) |
| NL (1) | NL7216051A (OSRAM) |
| SE (1) | SE375188B (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2454733A1 (de) * | 1973-11-23 | 1975-05-28 | Western Electric Co | Halbleiterkoerper in form eines halbleiterlasers |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4864369A (en) * | 1988-07-05 | 1989-09-05 | Hewlett-Packard Company | P-side up double heterojunction AlGaAs light-emitting diode |
-
0
- BE BE791928D patent/BE791928A/xx unknown
-
1972
- 1972-06-22 CA CA145,418A patent/CA968443A/en not_active Expired
- 1972-11-22 SE SE7215185A patent/SE375188B/xx unknown
- 1972-11-27 DE DE2258087A patent/DE2258087A1/de active Pending
- 1972-11-27 NL NL7216051A patent/NL7216051A/xx not_active Application Discontinuation
- 1972-11-29 IT IT70766/72A patent/IT975901B/it active
- 1972-11-30 JP JP11944672A patent/JPS4865881A/ja active Pending
- 1972-11-30 FR FR7242659A patent/FR2162123B1/fr not_active Expired
- 1972-12-01 GB GB5549972A patent/GB1363796A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2454733A1 (de) * | 1973-11-23 | 1975-05-28 | Western Electric Co | Halbleiterkoerper in form eines halbleiterlasers |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7216051A (OSRAM) | 1973-06-05 |
| CA968443A (en) | 1975-05-27 |
| SE375188B (OSRAM) | 1975-04-07 |
| JPS4865881A (OSRAM) | 1973-09-10 |
| GB1363796A (en) | 1974-08-14 |
| BE791928A (fr) | 1973-03-16 |
| FR2162123B1 (OSRAM) | 1977-04-08 |
| FR2162123A1 (OSRAM) | 1973-07-13 |
| IT975901B (it) | 1974-08-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHN | Withdrawal |