DE2120235C3 - Vorrichtung zum Vervielfachen von Elektronen - Google Patents
Vorrichtung zum Vervielfachen von ElektronenInfo
- Publication number
- DE2120235C3 DE2120235C3 DE19712120235 DE2120235A DE2120235C3 DE 2120235 C3 DE2120235 C3 DE 2120235C3 DE 19712120235 DE19712120235 DE 19712120235 DE 2120235 A DE2120235 A DE 2120235A DE 2120235 C3 DE2120235 C3 DE 2120235C3
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- electrons
- surface parts
- layer
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 230000035515 penetration Effects 0.000 claims description 8
- 238000003384 imaging method Methods 0.000 claims description 3
- 229910052792 caesium Inorganic materials 0.000 claims 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims 1
- 230000005686 electrostatic field Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 9
- 239000002800 charge carrier Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 210000003733 optic disk Anatomy 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/22—Dynodes consisting of electron-permeable material, e.g. foil, grid, tube, venetian blind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/10—Dynodes
Landscapes
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712120235 DE2120235C3 (de) | 1971-04-24 | 1971-04-24 | Vorrichtung zum Vervielfachen von Elektronen |
| GB1868272A GB1377566A (en) | 1971-04-24 | 1972-04-21 | Device for multiplying free electrons |
| NL7205448A NL7205448A (https=) | 1971-04-24 | 1972-04-21 | |
| FR7214514A FR2134459B1 (https=) | 1971-04-24 | 1972-04-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712120235 DE2120235C3 (de) | 1971-04-24 | 1971-04-24 | Vorrichtung zum Vervielfachen von Elektronen |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2120235A1 DE2120235A1 (de) | 1972-11-02 |
| DE2120235B2 DE2120235B2 (de) | 1979-01-11 |
| DE2120235C3 true DE2120235C3 (de) | 1979-09-06 |
Family
ID=5805889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712120235 Expired DE2120235C3 (de) | 1971-04-24 | 1971-04-24 | Vorrichtung zum Vervielfachen von Elektronen |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE2120235C3 (https=) |
| FR (1) | FR2134459B1 (https=) |
| GB (1) | GB1377566A (https=) |
| NL (1) | NL7205448A (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8200875A (nl) * | 1982-03-04 | 1983-10-03 | Philips Nv | Inrichting voor het opnemen of weergeven van beelden en halfgeleiderinrichting voor toepassing in een dergelijke inrichting. |
| US4677342A (en) * | 1985-02-01 | 1987-06-30 | Raytheon Company | Semiconductor secondary emission cathode and tube |
| US6836059B2 (en) * | 2003-03-25 | 2004-12-28 | Itt Manufacturing Enterprises, Inc. | Image intensifier and electron multiplier therefor |
| GB2409927B (en) * | 2004-01-09 | 2006-09-27 | Microsaic Systems Ltd | Micro-engineered electron multipliers |
| CN121232253B (zh) * | 2025-12-01 | 2026-04-07 | 中国科学院西安光学精密机械研究所 | 一种中子敏感mcp及其制作方法 |
-
1971
- 1971-04-24 DE DE19712120235 patent/DE2120235C3/de not_active Expired
-
1972
- 1972-04-21 GB GB1868272A patent/GB1377566A/en not_active Expired
- 1972-04-21 NL NL7205448A patent/NL7205448A/xx not_active Application Discontinuation
- 1972-04-24 FR FR7214514A patent/FR2134459B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL7205448A (https=) | 1972-10-26 |
| FR2134459B1 (https=) | 1979-01-12 |
| FR2134459A1 (https=) | 1972-12-08 |
| DE2120235A1 (de) | 1972-11-02 |
| GB1377566A (en) | 1974-12-18 |
| DE2120235B2 (de) | 1979-01-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OF | Willingness to grant licences before publication of examined application | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |